Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and the second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

A holding device for a fracturable assembly, which is intended to separate along a fracture plane defined between an upper part and a lower part of the fracturable assembly, comprises at least two protrusions configured to hold keep the fracturable assembly suspended in a substantially horizontal holding position, the protrusions being intended to be located between the upper part and the lower part, against a peripheral chamfer of the upper part; a support located below and at a distance from the, protrusions so as to gravitationally receive the lower part when the fracturable assembly is separated, and to keep it at a distance from the upper part held by the protrusions.

Implementations described herein generally relate to substrate processing equipment and more particularly to methods and compositions for temperature control of substrate processing equipment. In one implementation, a method of cooling a processing chamber component is provided. The method comprises introducing an inert purge gas into a supply reservoir containing a coolant and flowing the treated coolant to a processing chamber component to cool the processing chamber component. The coolant initially comprises deionized water and a water-soluble base.

The present disclosure generally relates to a method for performing semiconductor device fabrication, and more particularly, to improvements in lithographic overlay techniques. The method for improved overlay includes depositing a material on a substrate, heating a substrate in a chamber using thermal energy, measuring a local stress pattern of each substrate, wherein measuring the local stress pattern measures an amount of change in a depth of the deposited material on the substrate, plotting a plurality of points on a k map to determine a local stress pattern of the substrate, adjusting the thermal energy applied to the points on the k map, determining a sensitivity value for each of the points on the k map, and applying a correction factor to the applied thermal energy to adjust the local stress pattern.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

A temperature monitoring apparatus includes: a calculator configured to calculate a temperature monitoring waveform by a first-order lag function based on an elapsed time from a start of a temperature change from a first temperature to a second temperature, and a time constant calculated based on a locus of the temperature change; and a monitor configured to monitor a temperature changing from the first temperature to the second temperature based on the temperature monitoring waveform calculated by the calculator.

A method of heating/cooling one or more substrates includes placing the one or more substrates on a rotatable hot-cold plate, wherein each substrate of the one or more substrates is placed on a corresponding sub-plate of a plurality of sub-plates of the rotatable hot-cold plate. The method further includes rotating the one or more substrates, wherein rotating the one or more substrates comprises rotating each substrate of the one or more substrates independently. The method further includes heating or cooling the one or more substrates using a heating-cooling element, wherein rotating the one or more substrates comprises rotating the one or more substrates relative to the heating-cooling element.

Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a method of processing a substrate is disclosed herein. The method includes removing a native oxide from a surface of the substrate, baking the substrate in a pre-treatment thermal chamber such that double atomic steps are formed on the surface of the substrate, and forming an epitaxial layer on the substrate after the substrate is baked.

A drug delivery system includes flexible and interchangeable nozzle and tip. In one embodiment, the present invention relates to a medical device for intranasal delivery of a medicament. The present invention effectively delivers an appropriate amount of medicament to the designated surface area. In one other embodiment, the present invention ensures that a complete dosage of the medicament is delivered, especially to specific areas in the nasal cavity such as the rear of the nasal cavity where the SPG is located.

An improved particle beam inspection apparatus, and more particularly, a particle beam inspection apparatus including an improved load lock unit is disclosed. An improved load lock system may comprise a plurality of supporting structures configured to support a wafer and a conditioning plate including a heat transfer element configured to adjust a temperature of the wafer. The load lock system may further comprise a gas vent configured to provide a gas between the conditioning plate and the wafer and a controller configured to assist with the control of the heat transfer element.