The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

Chip manufacturing, including: assembling at least two chips on a layer; and applying mold compound on the at least two chips to the sides and bottom including flowing around interconnects, thereby leaving the top of each of the at least two chips exposed.

A pressure adjustment apparatus includes a storage tank storing a gas for the chamber with an outlet, a first supply line supplying the gas from an external line to the storage tank, a second supply line supplying the gas from the storage tank to the chamber, a discharge line discharging the gas from the chamber using the outlet of the chamber, and a controller controlling valves at the first, second, and discharge lines. The discharge line includes first and second valves connected to each other in parallel at an end portion of the outlet of the chamber, and a third valve connected to the end portion of the outlet of the chamber. The controller opens the first and second valves to discharge the gas from the chamber, and opens the third valve after a predetermined amount of time after the opening of the first and second valves.

A substrate processing apparatus includes one or more substrate processing modules; a vacuum transfer module connected to the one or more substrate processing modules;

and a load-lock module including at least three load-lock chambers arranged along a first horizontal direction. A tubular fitting module is disposed between the vacuum transfer module and the load-lock module, and the tubular fitting module has a first opening and a second opening. The first opening is connected to the load-lock module, and the second opening is connected to the vacuum transfer module. The first opening has a first length in the first horizontal direction, the second opening has a second length in the first horizontal direction, and the first length is larger than the second length. A transfer mechanism transfers a substrate between the one or more substrate processing modules and the load-lock module through the tubular fitting module.

A wet etching apparatus is provided. The wet etching apparatus induces an etching chamber, at least one shutter, and at least one spraying pipe. The etching chamber is used for accommodating and etching a substrate, and has an inlet at its front end as well as an outlet at its rear end. The shutter is mounted at the inlet or the outlet by a shaft. The spraying pipe disposed on the shaft overturns with the shutter at the same time. It can effectively remove a large number of crystals of the etching liquid generated at the inlet of the etching chamber and the outlet of the etching chamber by spraying over the inlet of the etching chamber and the outlet of the etching chamber through the spraying pipe, thereby improving an utilization of the apparatus, cleanliness, and a product quality.

Embodiments described herein relate to a substrate support assembly which enables a cryogenic temperature operation of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a cryogenic processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. The substrate support assembly includes an electrostatic chuck (ESC), an ESC base assembly coupled to the ESC having a base channel disposed therein, and a facility plate having a facility channel disposed therein. The facility plate includes a plate portion and a wall portion. The plate portion is coupled to the ESC base assembly and the wall portion coupled to the ESC with a seal assembly. A vacuum region is defined by the ESC, the ESC base assembly, the plate portion of the facility plate, the wall portion of the facility plate, and the seal assembly.

An apparatus for processing a substrate may include a wet chamber, a dry chamber, a first transfer robot and a shared shutter. The wet chamber may be configured to process the substrate using a chemical. The dry chamber may be adjacent the wet chamber and configured to dry the substrate processed by the wet chamber. The first transfer robot may be configured to transfer the substrate between the wet chamber and the dry chamber. The shared shutter may be between the wet chamber and the dry chamber. A connection opening through which the substrate may be transferred may be formed between the wet chamber and the dry chamber. The shared shutter may be configured to open and close the connection opening.

Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

An apparatus as disclosed herein relates to a chamber body design for use within a thermal deposition chamber, such as an epitaxial deposition chamber. The chamber body is a segmented chamber body design and includes an inject ring and a base plate. The base plate includes a substrate transfer passage and one or more exhaust passages disposed therethrough. The inject ring includes a plurality of gas inject passages disposed therethrough. The inject ring is disposed on top of the base plate and attached to the base plate. The one or more exhaust passages and the gas inject passages are disposed opposite one another. One or more seal scaling grooves are formed in both the base plate and the inject ring to enable the inject ring and the base plate to seal to one another as well as other components within the process chamber.

A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.