Provided are an apparatus and method for treating a substrate. Specifically, provided are an apparatus and method for treating a substrate through a supercritical process. The apparatus includes: a housing providing a space for performing a process; a support member disposed in the housing to support a substrate; a supply port configured to supply a process fluid to the housing; a shield member disposed between the supply port and the support member to prevent the process fluid from being directly injected to the substrate; and an exhaust port configured to discharge the process fluid from the housing.

A transfer device is disposed in a vacuum transfer chamber. The transfer device includes a structure body having an inner space isolated from the vacuum transfer chamber, an arm that rotates with respect to the structure body, and a vacuum seal structure configured to airtightly seal a sliding portion between the structure body and the arm. Further, the vacuum seal structure includes one or more seal members disposed at the sliding portion; a sealing portion formed by the structure body, the arm, and the seal members, lubricant being sealed in the sealing portion; and a pressure adjusting unit configured to adjust a pressure in the sealing portion.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

A substrate processing system is disclosed. The system comprises a first chamber having a first substrate transfer port; a second chamber having a second substrate transfer port and configured to perform substrate processing; a connecting member that allows the first substrate transfer port and the second substrate transfer port to communicate with each other; a heat shield portion disposed along the second transfer port in cross-sectional view and configured to thermally block the first chamber and the second chamber from each other; and a protective member disposed between the heat shield portion and the second transfer port and configured to prevent deterioration of the heat shield portion during substrate processing in the second chamber.

Disclosed is a wafer processing system, a dual gate system, and methods for operating these systems. The dual gate system may have a first gate, a second gate, a gate connector coupled to the first gate and to the second gate, and actuator coupled to the gate connector. The actuator is configured to seal the first gate against a first slot or open the first slot via vertical motion. The actuator is also configured to seal the second gate against a second slot or open the second slot via a combination of vertical motion and horizontal motion.

A substrate processing apparatus includes: a processing container including an internal space where a supercritical drying process is performed on a substrate having a surface to which a liquid is attached, by using a processing fluid in a supercritical state; a housing including a processing region where the processing container is disposed, and a carry-in/out region where carry-in/out of the substrate is performed; a delivery section that is provided in the carry-in/out region to deliver the substrate to/from a substrate transfer arm entering the carry-in/out region from an outside of the housing; a substrate transfer section that transfers the substrate between the delivery section and the processing container; and a gas supply provided in the carry-in/out region to supply a dry gas to the processing container.

A system for thinning a substrate includes a chuck and a first liquid supply unit. The chuck includes a base portion and a frame portion disposed on the base portion, where the substrate is configured to be placed on a carrying surface of the chuck. The first liquid supply unit extends along sidewalls the frame portion and the base portion, an outlet of the first liquid supply unit is disposed next to the carrying surface of the chuck, the first liquid supply unit delivers a first liquid from a bottom of the chuck to the outlet, and the first liquid discharges from the outlet to cover a sidewall of the substrate.

According to one embodiment, a semiconductor manufacturing device includes a chemical solution preparation tank configured to prepare a solution; a chamber configured to discharge the chemical solution prepared at the chemical solution preparation tank to a substrate; a pressure sensor configured to measure a pressure inside the chemical solution preparation tank; and a variable opening valve arranged between the chemical solution preparation tank and an exhaust pipe.

A method and a system for manufacturing a semiconductor package structure are provided. The method includes: (a) measuring an amount of a molding powder; (b) controlling the amount of a molding powder; and (c) dispensing the molding powder on an assembly structure including a carrier and at least one semiconductor device disposed on the carrier.

A substrate transfer door assembly includes a body, one or more radiating elements, a member, and at least one lifting coupler. The body includes a central portion. At least the central portion of the body operates as a substrate transfer door and covers at least one of an opening of a liner or an opening of a chamber wall of a substrate processing chamber. The one or more radiating elements radiating heat away from the body. The member extends from the body. The at least one lifting coupler is connected to the member and movable in a vertical direction between an open position and a closed position to cover the at least one of the opening of the liner or the opening of the chamber wall with the central portion of the body.