A semiconductor manufacturing apparatus includes a stage connected to a vacuum generator to suction a semiconductor wafer including a plurality of semiconductor chips; a suction control unit connected to a connecting portion of the stage and the vacuum generator to control the connection of the stage and the vacuum generator; a pickup unit picking up each of the plurality of semiconductor chips; and a control unit controlling movement and rotation of the pickup unit and controlling the suction control unit; wherein the pickup unit moves the semiconductor chip from the stage to a mounting position of a supporting substrate and adherers the semiconductor chip by the control unit.

A wafer dividing apparatus for dividing a wafer stuck to an adhesive tape and supported at an opening of a frame into individual chips along a scheduled division line is provided. The wafer dividing apparatus includes a cassette table movable upwardly and downwardly in a Z axis direction, a first carry-out/in unit that carries out the frame from the cassette placed on the cassette table or carry in the frame to the cassette, a first temporary receiving unit including a pair of first guide rails extending in the X axis direction and a guide rail opening/closing portion that increases the distance between the pair of first guide rails, a reversing unit including a holding portion that holds the frame and rotates by 180 degrees to reverse the front and back of the frame, and a transport unit that moves the reversed frame.

A wafer processing method for dividing a wafer into individual device chips along division lines is disclosed. The wafer processing method includes a back grinding step of grinding the back side of the wafer in the condition where a protective tape is attached to the front side of the wafer, thereby reducing the thickness of the wafer to a predetermined thickness, and a reinforcing insulation seal mounting step of mounting a reinforcing insulation seal capable of transmitting infrared light on the back side of the wafer. The wafer processing method further includes a modified layer forming step of applying a laser beam along each division line to thereby form a modified layer inside the wafer along each division line and a wafer dividing step of applying an external force to the wafer to thereby divide the wafer into the individual device chips along each division line.

A plasma processing apparatus performs plasma processing on a substrate held by a carrier. The carrier includes a frame disposed around the substrate and a holding sheet which holds the substrate and the frame. The plasma processing apparatus includes: a chamber; a stage which is disposed within the chamber and has an upper surface on which the carrier is mounted; a gas hole which is provided at a position of the upper surface opposing a bottom surface of the frame and through which cooling gas is supplied between the stage and the carrier; and a plasma exciting unit which generates plasma within the chamber.

A method of driving an element of an active matrix electro-wetting on dielectric (AM-EWOD) device comprise applying a first alternating voltage to a reference electrode of the AM-EWOD device; and either (i) applying to the element electrode a second alternating voltage that has the same frequency as the first alternating voltage and that is out of phase with the first alternating voltage or (ii) holding the element electrode in a high impedance state. The effect of applying the second alternating voltage to the element electrode is to put the element in an actuated state in which the element is configured to actuate any liquid droplet present in the element, while the effect of holding the element electrode in the high impedance state is to put the element in a non-actuated state.

A method for a MEMS device includes receiving a diced wafer having a plurality devices disposed upon an adhesive substrate and having an associated known good device data, removing a first set of devices from the plurality of devices from the adhesive substrate in response to the known good device data, picking and placing a first set of the devices into a plurality of sockets within a testing platform, testing the first set of integrated devices includes while physically stressing the first set of devices, providing electrical power to the first set of devices and receiving electrical response data from the first set of devices, determining a second set of devices from the first set of devices, in response to the electrical response data, picking and placing the second set of devices into a transport tape media.

A measurement processing process S103 of measuring a cut width of a film based on an image obtained by imaging, with an imaging unit 270, a peripheral portion of a substrate which is processed based on a substrate processing recipe; a creation process S602 of creating a management list in which a set value of the cut width of the film, a measurement value of the cut width of the film measured through the measurement processing process and time information at which the measurement result is obtained are correlated; an analysis process S603 (S606) of analyzing a state of the processed substrate based on the created management list; and a notification process S605 (S608, S609) of making a preset notification to a user based on an analysis result obtained through the analysis process are provided.

A method of heating/cooling one or more substrates includes placing the one or more substrates on a rotatable hot-cold plate, wherein each substrate of the one or more substrates is placed on a corresponding sub-plate of a plurality of sub-plates of the rotatable hot-cold plate. The method further includes rotating the one or more substrates, wherein rotating the one or more substrates comprises rotating each substrate of the one or more substrates independently. The method further includes heating or cooling the one or more substrates using a heating-cooling element, wherein rotating the one or more substrates comprises rotating the one or more substrates relative to the heating-cooling element.

A method for dividing a wafer including: attaching a protective tape to a functional layer of the wafer with the adhesive layer of the tape in contact with the functional layer; and a wafer dividing step. The dividing step includes a cut groove forming step and a laser processing step. The cut groove forming step uses a blade to form a cut groove with a depth that does not reach the functional layer, resulting in part of the substrate being left along each division line. The laser processing step includes applying a laser beam to the part of the substrate left after the cut groove forming step and the functional layer of the wafer to form a laser processed groove having a depth reaching the tape. The tape is closely attached to the functional layer during the tape attaching step to prevent the adhesion of debris to the devices.

A method of processing a wafer having a plurality of intersecting streets on a face side thereof with protrusions on the streets includes a holding step of holding a protective sheet of a wafer unit on a holding table, an upper surface heightwise position detecting step of detecting a heightwise position of an upper surface of a reverse side of the wafer along the streets, and a laser beam applying step of applying a laser beam having a wavelength transmittable through the wafer to the wafer from the reverse side thereof along the streets while positioning a focused point of the laser beam within the wafer on the basis of the heightwise position, to thereby form modified layers in the wafer along the streets.