A method for evaluation of thin film non-uniform stress using high order wafer warpage, the steps including measuring a net wafer warpage across a wafer area due to thin film deposition, fitting a two dimensional low-order polynomial to the wafer warpage measurements and subtracting the low-order polynomial from the net wafer warpage across the wafer area.

A substrate processing apparatus for processing a substrate to be measured by a film thickness measurement device, includes: a heat treatment part configured to heat-treat a substrate coated with a coating film; and a fluid supply part configured to supply a fluid, which suppresses variations in a film thickness over time until the film thickness is measured by the film thickness measurement device, to the substrate during or after the heat-treatment by the heat treatment part.

A substrate processing apparatus includes: a batch processor configured to collectively process a lot including plural substrates; a single-wafer processor configured to process the substrates included in the lot one by one; and a transport portion configured to deliver the substrates one by one between the batch processor and the single-wafer processor. The batch processor includes a processing tank configured to store a processing liquid including a rinsing liquid. The transport portion includes a fluid supplier configured to supply, after receiving the substrates included in the lot in the processing tank and until delivering the substrates to the single-wafer processor, a low surface tension fluid having a lower surface tension than the rinsing liquid to at least one of the processing tank and the substrates.

A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.

A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the antireflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO.sub.2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.

Disclosed is a method for processing a substrate, comprising a liquid processing step of performing liquid processing on the substrate by supplying a processing liquid onto the substrate in a liquid processing chamber, a transfer step of transferring the substrate from the liquid processing chamber to a drying chamber, and a drying step of drying the substrate in the drying chamber. In the drying step, the substrate is dried while an edge region of the substrate other than a central region of the substrate is supported by a support unit, and in the liquid processing step, the liquid processing is performed on the substrate such that a height of the processing liquid remaining on the edge region of the substrate is greater than a height of the processing liquid remaining on the central region of the substrate when the liquid processing is completed in the liquid processing chamber.

A wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket having a base and a substantially circular perimeter, and a removable orientation marker, the removable orientation marker comprising an outer surface and an inner surface, the outer surface having an arcuate form sized and shaped to mate with the substantially circular perimeter of the pocket, and the inner surface comprising a flat face, wherein the removable orientation marker further comprises a notch at a first end of the flat face.

An apparatus for monitoring particles in a chemical solution includes a chemical solution supply device that stores a chemical solution and supplies the chemical solution according to a work start signal of a control unit, a first supply channel that is connected with the chemical solution supply device to supply the chemical solution, a filter that is connected with the first supply channel to purify the chemical solution, a branch channel and a main channel that are branched from the filter, a drain valve that is connected with the branch channel to open and close the branch channel, a particle monitor that is connected with the main channel to detect the amount of particles in the chemical solution, and a dispenser unit that receives the chemical solution from the particle monitor to supply the chemical solution to an object to be worked.

A droplet ejecting apparatus includes a workpiece table configured to place a workpiece thereon, a droplet ejecting head configured to eject droplets onto the workpiece placed on the workpiece table, a Y-axis linear motor configured to move the workpiece table in a main scanning direction (Y-axis direction), a position detector configured to detect a position of a carriage mark, and a control unit configured to calculate the positional deviation amount in the main scanning direction between a detection position detected by the position detector and a reference position of the carriage mark and correct a droplet ejecting timing of the droplet ejecting head based on the positional deviation amount.