A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film.

A nozzle that mixes fluid containing steam or mist of pressurized pure water and processing liquid containing at least sulfuric acid and ejects mixed fluid of the fluid and the processing liquid, the nozzle comprising: at least one first ejection port ejecting the fluid; at least one second ejection port ejecting the processing liquid; and at least one lead-out path being in fluid communication with the at least one first ejection port and the at least one second ejection port and leading out the mixed fluid of the fluid ejected from the at least one first ejection port and the processing liquid ejected from the at least one second ejection port, wherein the at least one first ejection port or the at least one second ejection port is arranged to be directed to position deviated from central axis of the at least one lead-out path in a plan view.

To provide a technique of preventing, in an encapsulated circuit module having a metal shield layer covering a surface of a resin layer containing filler, the shield layer from falling off.

In manufacturing encapsulated circuit modules, first, a substrate 100 is covered with a first resin 400 containing filler together with an electronic component 200. Next, a surface of the first resin 400 is covered with a second resin 500 containing no filler. Subsequently, a ground electrode 110 in the substrate 100 is exposed by snicking and then a shield layer 600 that covers the entire surface of the substrate 100 is formed by electroless plating. Thereafter, snipping is performed to obtain a number of encapsulated circuit modules.

A coating film forming apparatus includes a carry-in/out section in which a substrate is carried in and carried out; a periphery coating module configured to form a ring-shaped coating film by supplying a coating liquid along a periphery of the substrate based on a processing parameter for controlling a coating state by the coating film; an imaging module configured to image the substrate on which the ring-shaped coating film is formed; a transfer mechanism configured to transfer the substrate; and a controller configured to output a control signal to perform a process of forming the ring-shaped coating film on the substrate based on the processing parameter having different values and imaging the substrate by the imaging module, and configured to determine, based on an imaging result of the substrate, a value of the processing parameter for forming the ring-shaped coating film on the substrate in the periphery coating module.

In substrate processing, by supplying a first processing liquid onto an upper surface 91 of a substrate 9 held in a horizontal state, a liquid film 81 of the first processing liquid which entirely covers the upper surface 91 is formed. Further, by heating the substrate 9, a vapor layer 82 of the first processing liquid is formed between the upper surface 91 and the liquid film 81 of the first processing liquid on the upper surface 91. Then, by supplying a second processing liquid onto the upper surface 91 of the substrate 9, the liquid film 81 of the first processing liquid is removed from the upper surface 91. It is thereby possible to appropriately remove extraneous matters 89 from the upper surface 91 of the substrate 9, which are taken in the liquid film 81 of the first processing liquid as the vapor layer 82 is formed.

A separation apparatus for separating a superposed substrate in which a processing target substrate and a supporting substrate are joined together with an adhesive, into the processing target substrate and the supporting substrate includes: a first holding unit that includes a heating mechanism heating the processing target substrate and holds the processing target substrate; a second holding unit that includes a heating mechanism heating the supporting substrate and holds the supporting substrate; a moving mechanism that relatively moves at least the first holding unit or the second holding unit in a horizontal direction; and a porous part that is annularly provided along an outer peripheral portion of the first holding unit and formed with a plurality of pores, and supplies an inert gas to the outer peripheral portion of the first holding unit holding the processing target substrate.

An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

A method of manufacturing a semiconductor device includes detecting, using a sensor, liquid spin on glass (SOG) outside of a dispenser nozzle in an abnormal length relative to the dispenser nozzle. The method further includes adjusting, using a controller, a suck back (SB) valve to withdraw liquid SOG from the abnormal length. The method further includes comparing a sensed amount of liquid SOG deposited onto the semiconductor wafer from the dispenser nozzle with at least one set operating parameter. The method further includes pausing sensing of a duration of dispensing liquid SOG onto the semiconductor wafer based on the sensed amount of liquid SOG deposited being outside the at least one operating parameter.

A method for removing particles from a semiconductor wafer surface is disclosed. A liquid is placed on a surface of a semiconductor wafer on which particles may adhere. A light pulse is then applied to the surface of the semiconductor wafer through the liquid. The liquid containing the particles is then removed from the surface of the semiconductor wafer.