A substrate processing method includes a processing liquid supplying step of supplying a processing liquid having a solute and a solvent to a surface of a substrate, a processing film forming step of solidifying or curing the processing liquid supplied to the surface of the substrate to form, on the surface of the substrate, a processing film that holds a removal object present on the surface of the substrate, a peeling step of supplying a peeling liquid forming liquid to the surface of the substrate to put the peeling liquid forming liquid in contact with the processing film and form a peeling liquid, and peeling the processing film, in the state of holding the removal object, from the surface of the substrate by the peeling liquid, and a removing step of continuing the supply of the peeling liquid forming liquid, after the peeling of the processing film, to wash away and remove the processing film from the surface of the substrate in the state where the removal object is held by the processing film.

A holding mechanism holds a substrate horizontally. A rotation mechanism rotates the holding mechanism holding the substrate. A nozzle supplies a processing liquid to the substrate. A nozzle arm holds the nozzle. An arm actuation mechanism moves the nozzle arm between a processing position overlapping the substrate in plan view and a retracted position displaced from the substrate in plan view. A cup portion is disposed around the holding mechanism, and receives the processing liquid from the substrate. A cup actuation mechanism moves the cup portion up and down between an upper position and a lower position. A first container is fixed to the cup portion to be movable up and down integrally with the cup portion, and can accommodate the nozzle at the retracted position.

The present invention provides a substrate treating apparatus. The substrate treating apparatus includes: a first process chamber having a first treatment space therein; a second process chamber having a second treatment space therein; and an exhaust unit exhausting atmospheres of the first treatment space and the second treatment space, in which the exhaust unit includes: an integrated exhaust line; a first exhaust line connecting the first process chamber and the integrated exhaust line; a second exhaust line connecting the second process chamber and the integrated exhaust line; and a partition wall partitioning a partial section of a flow path within the integrated exhaust line into a first flow path through which a fluid exhausted through the first exhaust line flows and a second flow path through which a fluid discharged through the second exhaust line flows.

The present invention provides a method of treating a substrate, the method including: performing a first heating process of heat-treating the substrate formed with a film, and a second heating process of heat-treating the substrate after the first heating process is performed; a collection operation of collecting temperature data of a first heating plate which heats the substrate in the first heating process; and a first control operation of adjusting a temperature of a second heating plate which heats the substrate in the second heating process based on the temperature data.

An apparatus for cleaning a bowl includes a base plate, and a blade coupled to the base plate. The blade extends in a curve on a surface of the base plate in a direction receding from a center of the base plate in a plan view. An inner side surface of the blade includes a curved surface concavely recessed toward an inside of the blade in a cross-sectional view taken along a direction perpendicular to an extending direction of the blade.

A substrate treating apparatus includes a carrier platform, a transport mechanism, and a controller. The carrier platform places a carrier thereon. The carrier includes a plurality of shelves arranged in an up-down direction. The shelves are each configured to place one substrate thereon in a horizontal posture. The transport mechanism is configured to transport a substrate to a carrier placed on the carrier platform. The controller controls the transport mechanism. The transport mechanism includes a hand and a hand driving unit. The hand supports a substrate. The hand driving unit moves the hand. The controller changes a height position of the hand when the hand is inserted between two of the shelves adjacent to each other in the up-down direction, depending on a shape of a substrate taken from or placed on one of the shelves by the transport mechanism.

A substrate processing apparatus includes a holding unit which holds a substrate horizontally, a facing member which faces an upper surface of the substrate from above and can be engaged with the holding unit, a supporting member which supports the facing member, a raising/lowering unit in which the supporting member is raised and lowered between an upper position at which the supporting member supports the facing member in a state where the facing member is separated above from the holding unit and an engaging position which is a position below from the upper position and at which the holding unit is engaged with the facing member, and a detecting unit which is disposed at the supporting member. The detecting unit detects a position of a portion to be detected which is disposed at the facing member in relation to the detecting unit.

In a method of coating a photo resist over a wafer, dispensing the photo resist from a nozzle over the wafer is started while rotating the wafer, and dispensing the photo resist is stopped while rotating the wafer. After starting and before stopping the dispensing the photo resist, a wafer rotation speed is changed at least 4 times. During dispensing, an arm holding the nozzle may move horizontally. A tip end of the nozzle may be located at a height of 2.5 mm to 3.5 mm from the wafer.

A method of planarizing a substrate comprises dispensing formable material onto a substrate, contacting a superstrate held by a superstrate chuck with the formable material on the substrate, thereby forming a multilayer structure including the superstrate, a film of the formable material, and the substrate, releasing the multilayer structure from the superstrate chuck, providing a space between the superstrate chuck and the multilayer structure after the releasing, positioning a light source into the provided space between the superstrate chuck and the multilayer structure, and curing the film of the multilayer structure by exposing the film to light emitted from the light source.

A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.