A manufacturing method of the ESD protection device includes the following steps. A surface treatment is performed on the substrate. A link layer is formed on the substrate after the surface treatment, wherein a material of the link layer includes a metal material. A progressive layer is formed on the link layer, wherein a material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. A composite layer is formed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10.sup.7 to 1×10.sup.8 Ω/sq.

An ESD protection composite structure includes a link layer, a progressive layer, and a composite layer. The link layer is used for disposing the ESD protection composite structure on a substrate, wherein a material of the link layer includes a metal material. The progressive layer is disposed on the link layer, wherein the material of the progressive layer includes a non-stoichiometric metal oxide material, and an oxygen concentration in the non-stoichiometric metal oxide material is increased gradually away from the substrate in a thickness direction of the progressive layer. The composite layer is disposed on the progressive layer, wherein the composite layer includes a stoichiometric metal oxide material and a non-stoichiometric metal oxide material, and a ratio of the non-stoichiometric metal oxide material and the stoichiometric metal oxide material in the composite layer may make a sheet resistance value of the composite layer 1×10.sup.7 Ω/sq to 1×10.sup.8 Ω/sq.

Two-piece shutter disk assemblies for use in process chambers are provided herein. In some embodiments, a shutter disk assembly for use in a process chamber includes an upper disk member having a top surface and a bottom surface, wherein a central alignment recess is formed in a center of the bottom surface, and a lower carrier member having a solid base having an upper support surface, wherein the upper support surface includes a first central self-centering feature disposed in the recess formed in the center of the bottom surface and an annular outer alignment feature that protrudes upward from a top surface of the lower carrier and forms a pocket, wherein the upper disk member is disposed in the pocket.

A detachable etching tool for etching a plurality of silicon carbide pieces has a first supporting column and a second supporting column, both of which are fixed through a tool fixing block. A bracket is arranged on the tool fixing block, and a limiting rod is installed on the lower end surface of the bracket. The bracket is inserted into the tool fixing block through the limiting rod and fixed on the tool fixing block with a fastening mechanism that comprises a base, a fixing seat, a telescopic spring, a telescopic guide column, a sliding block, a guide block, an inserting rod and a push-pull mechanism. The etching tool addresses low productivity per unit time and long time consumption in the etching processing.

A method of manufacturing an actuator includes a first electrode layer forming step, a dielectric elastomer layer forming step, and a second electrode layer forming step, and obtains the actuator in which dielectric elastomer layers and electrode layers have been concentrically laminated. In the first electrode layer forming step, an electrode material is provided to an outer circumferential surface of a shaft section to form the electrode layer. In the dielectric elastomer layer forming step, a sheet-like or paste-like dielectric elastomer material is provided to an outer circumferential surface of the electrode layer to form the dielectric elastomer layer. In the second electrode layer forming step, the electrode material is provided to an outer circumferential surface of the dielectric elastomer layer to form the electrode layer.

An insulating wafer-storing container for storing substrates inside the container is provided in which at least one exterior surface of the container is formed with a contact portion that is to be in contact with an object other than the container and a non-contact portion that is not to be in contact with the object when the object is brought into contact with the at least one exterior surface, and the area of the contact portion is 40% or less of the total of the area of the contact portion and the area of the non-contact portion.

There is provided a technique that includes: forming a film on a substrate including a recess formed on a surface of the substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate; and (b) supplying a reaction gas to the substrate, wherein in (a), the precursor gas is supplied to the substrate separately a plurality of times, and a processing condition under which the precursor gas is supplied for a first time is set to a processing condition under which self-decomposition of the precursor gas is capable of being more suppressed than a processing condition under which the precursor gas is supplied for at least one subsequent time after the first time.

There is provided a technique that includes a substrate support including a support column made of metal and a plurality of supports installed at the support column and configured to support a plurality of substrates in multiple stages; a process chamber configured to accommodate the plurality of substrates supported by the substrate support; and a heater configured to heat the plurality of substrates accommodated in the process chamber, wherein the plurality of supports includes at least a contact portion configured to make contact with the plurality of substrates and made of at least one selected from the group of a metal oxide and a non-metal material.

A SiC film structure for obtaining a three-dimensional SiC film by forming the SiC film in an outer circumference of a substrate using a vapor deposition type film formation method and removing the substrate, the SiC film structure including: a main body having a three-dimensional shape formed of a SiC film and having an opening for removing the substrate; a lid configured to cover the opening; and a SiC coat layer configured to cover at least a contact portion between the main body and an outer edge portion of the lid and join the main body and the lid.

A vertical wafer boat has an upper boat segment and a lower boat segment, with the upper boat segment configured to removably mount on the lower boat segment, and to receive one or more semiconductor substrates. The lower boat segment includes a top plate, a first set of adiabatic plates, and a second set of adiabatic plates. One or more posts connect the top plate, the first set of adiabatic plates, and the second set of adiabatic plates. The first set of adiabatic plates include a first set of gaps separating a first plurality of sections; the second set of adiabatic plates include a second set of gaps separating a second plurality of sections; and the first set of adiabatic plates and the second set of adiabatic plates are interleaved.