A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

A method for transferring a micro device includes: preparing a carrier substrate with the micro device thereon in which an adhesive layer is present between and in contact with the carrier substrate and the micro device; picking up the micro-device from the carrier substrate by a transfer head comprising a force-adjustable glue layer thereon; forming a liquid layer on a receiving substrate; reducing the grip force of the force-adjustable glue layer of the transfer head to be smaller than a force attaching the micro device to the receiving substrate; placing the micro device over the receiving substrate such that the micro device is in contact with the liquid layer and is gripped by a capillary force; and moving the transfer head away from the receiving substrate such that the micro device is detached from the transfer head and is stuck to the receiving substrate.

Sheets of a thin film material are attached to a carrier wafer. The carrier wafer and the attached sheets of thin film material are separated to form chiplet carriers. Each chiplet carrier includes a portion of the sheets of thin film material attached to a portion of the carrier wafer. The chiplet carriers are placed on an assembly surface in a random pattern. The chiplet carriers are arranged from the random pattern to a predetermined pattern, and the portions of the thin film material are transferred from the chiplet carriers in parallel to a target substrate.

A system for a semiconductor fabrication facility includes a maintenance tool, a control unit, a first track, a second track, a maintenance crane movably mounted on the first track, a plurality of first sensors disposed on the first track, an OHT vehicle movably mounted on the second track, and a second sensor on the OHT vehicle. The first sensors detect a location of the maintenance crane and generate a first location data to the control unit. The second sensor generates a second location data to the control unit.

Electronic components are transferred from a source surface for supplying electronic components to a destination surface for receiving electronic components by an ejector device that is locatable at an ejection position for pushing an electronic component mounted on the source surface towards the destination surface. A support device that is locatable at a receiving position supports the electronic component that is pushed onto the destination surface. Further, a pre-transfer imaging device inspects the electronic component before it is transferred from the source surface and a post-transfer imaging device inspects the electronic component after it has been transferred onto the destination surface, wherein the pre-transfer and post-transfer imaging devices are located on opposite sides of the source and destination surfaces.

A transferring chips method, including providing a plurality of chips on a first load-bearing structure; dividing the first load-bearing structure into a plurality of blocks, and each of the plurality of blocks including multiple chips of the plurality of chips; measuring a characteristic value of each of the plurality of chips; respectively calculating an average characteristic value of each of the plurality of blocks based on the characteristic values of the multiple chips of each of the plurality of blocks; and transferring the multiple chips of at least two blocks of the plurality of blocks with the average characteristic values within the same range to a second load-bearing structure.

An adsorption device includes a substrate and a magnetic film on a surface of the substrate. The substrate has magnetic properties and is capable of generating magnetic field. The magnetic film partially covers the surface. The magnetic film generates a magnetic field having a direction that is opposite to a direction of the magnetic field generated by the substrate. Portions of the surface of the substrate not covered by the magnetic film form positions to attract and adsorb target objects, and other portion of the surface of the substrate covered by the magnetic film is not able to attract any target object.

A system for a semiconductor fabrication facility includes a manufacturing tool including a load port, a maintenance tool including a first track and at least one maintenance crane on the first track, a rectangular zone overlapping with the load port, a plurality of first sensors on the first track and at corners of the rectangular zone configured to detect a location of the maintenance crane and generate a first location date, a transporting tool including a second track and a OHT vehicle on the second track, at least a second sensor on the OHT vehicle and configured to generate a second location data, at least a third sensor on the load port, and a control unit configured to receive the first location data and the second location data, and send signals to the second sensor and the third sensor or to cut off the signal to the second sensor.

A semiconductor device manufacturing method includes: (A) orienting an upper surface of a semiconductor element which has the upper surface and a suction surface of a collet which has a suction hole so that the upper surface of the semiconductor device and the suction surface of the collet face each other, the upper surface including a first region and a second region, the second region lying higher than the first region; (B) bringing the suction surface of the collet into contact with a part of the second region of the semiconductor element; and (C) picking up the semiconductor element using the collet while the collet sucks in air between the first region and the suction surface via the suction hole, wherein in (B), an entirety of an uppermost surface of the second region is in contact with a region of the suction surface exclusive of the suction hole.

Structures and methods to actively control the shape of a micro pickup array (MPA) during micro device transfer are described. In an embodiment, a strain is applied to the MPA counteractive to strain arising during micro device transfer operations. For example, strain may be applied by a piezoelectric actuator element bonded to a back side of the base substrate to control a curvature of base substrate, and by extension the MPA.