The present disclosure provides a chamber device, which includes a housing, which defines an cavity therein, a first valve, provided on a first side of the housing, and configured to switch between a closed condition thereof, and an opened condition thereof where the housing is in communication with one of the first pressure environment and the second pressure environment therethrough, a switching device, fixed to the housing, and configured to align the first valve with a respective inlet of the one of the first pressure environment and the second pressure environment, a second valve, provided on a second side of the housing opposite to the first side, and configured to communicate the cavity with the first pressure environment or disconnect the cavity from the first pressure environment, and a pressure regulating device, provided on the housing and in communication with the cavity .

Provided are a substrate transporting apparatus capable of preventing an increase in temperature of a transporting robot by installing a cooling plate around the transporting robot, and a substrate treating system including the same. The substrate transporting apparatus includes a transporting unit for transporting a substrate; and a cooling plate for controlling a temperature of the transporting unit, wherein the cooling plate is spaced apart from a side surface of the transporting unit and installed as a side wall, or is installed in close contact with the side surface of the transporting unit.

A linear electrical machine comprising a frame with a level reference plane and an array of electromagnets, connected to the frame to form a drive plane at a predetermined height relative to the reference plane. The array of electromagnets being arranged so that a series of electromagnets of the array of electromagnets define at least one drive line within the drive plane, and each of the electromagnets being coupled to an alternating current power source energizing each electromagnet. At least one reaction platen of paramagnetic, diamagnetic, or non-magnetic conductive material disposed to cooperate with the electromagnets of the array of electromagnets so that excitation of the electromagnets with alternating current generates levitation and propulsion forces against the reaction platen that controllably levitate and propel the reaction platen along at least one drive line, in a controlled attitude relative to the drive plane.

According to an embodiment of the present invention, there are provided an exhaust assembly capable of uniformly forming an air flow in an exhaust step of discharging a gas to the outside, and a liquid processing apparatus and substrate processing equipment including the exhaust assembly. According to the present invention, the exhaust assembly that discharges a gas generated in a substrate processing process includes at least two or more intake ports into which the gas flows, a body portion that communicates with the intake ports and provides symmetrical paths for discharging the gas, a guide portion that is installed to guide a flow of the gas at the body portion, and an exhaust port from which the gas is discharged. The guide portion includes a flow guide that is installed to be adjacent to at least one of the intake ports and guides a direction of the gas to equally divide the flow of the gas, and a flow-rate guide that is installed around the intake port most adjacent to the exhaust port among the intake ports and is formed to reduce a cross-sectional area of a flow path of the gas.

The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing through a pressure change between a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including; a process chamber (100) comprising a chamber body (110) which has an opened upper portion, in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and which comprises a gate (111) for loading/unloading a substrate (1) is disposed at one side thereof and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space, a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.

Substrate containers include purge flow distribution systems. The purge flow distribution systems can divide one or more input flows of purge gas to a plurality of gas distribution surfaces of a network of gas distribution devices. Methods of controlling purge can include configuring the substrate containers to provide determined purge gas flow rates at each of the gas distribution surfaces. The configuration can be performed using flow controls of the purge flow distribution systems. The purge gas flow rates can be determined based on purge performance parameters. A controller can direct the operation of the purge flow distribution systems. The controller and the substrate container can be combined in a substrate container purging system.

A robot apparatus is configured to extend a first end effector into a first process chamber and extend a second end effector into a second process chamber. The first process chamber and the second process chamber are separated by a first pitch. The robot apparatus is further configured to retract the first end effector and the second end effector into a rectangular mainframe while maintaining a distance between the substrates bounded by the first pitch throughout a retraction process, and fold the first end effector and the second end effector inward within a sweep diameter defined by a width of the rectangular mainframe.

A front surface of a semiconductor wafer is rapidly heated by irradiation of a flash of light. Temperature of the front surface of the semiconductor wafer is measured at predetermined intervals after the irradiation of the flash of light, and is sequentially accumulated to acquire a temperature profile. From the temperature profile, an average value and a standard deviation are each calculated as a characteristic value. It is determined that the semiconductor wafer is cracked when an average value of the temperature profile deviates from the range of ±5σ from a total average of temperature profiles of a plurality of semiconductor wafers or when a standard deviation of the temperature profile deviates from the range of 5σ from the total average thereof of the plurality of semiconductor wafers.

Provided is a pump for supplying a liquid. The pump includes: a tube including a pump chamber communicating with a chemical liquid inlet and a chemical liquid outlet, and configured to discharge a chemical liquid through a change in volume due to contraction and expansion; and a driving unit contracting or expanding the tube in a longitudinal direction, in which the tube includes: a flexible tube body including a pump chamber which has an increased internal volume when is contracted in a longitudinal direction and has a decreased internal volume when is expanded in the longitudinal direction, and which has a jar shape of which a radius is increased from the chemical liquid inlet to a center of the pump chamber, and the radius is decreased from the pump chamber to the chemical liquid outlet; a first flange provided at one end of the tube body and including the chemical liquid inlet; and a second flange provided at the other end of the tube body and including the chemical liquid outlet.

A wafer processing apparatus of an embodiment of the present disclosure may include an equipment front end module (EFEM), a wafer transfer chamber, a wafer processing chamber, and a wafer transfer arm. In addition, the EFEM may include an atmosphere control chamber configured to store a wafer carrier accommodating wafers, an upper air supplier configured to supply air into the atmosphere control chamber, an EFEM chamber under the atmosphere control chamber, a load lock arranged to be vertically overlapped by at least a portion of the EFEM chamber, and an EFEM arm configured to transfer the wafer carrier.