A wafer placement table includes a ceramic substrate that has a wafer placement surface, a first electrode that is embedded in the ceramic substrate, a first power supply terminal that is inserted from a surface of the ceramic substrate opposite the wafer placement surface toward the first electrode, a first joint that joins the first electrode and the first power supply terminal to each other and a second electrode that is disposed between the wafer placement surface and the first electrode in the ceramic substrate. A linear portion that extends in the ceramic substrate from a position on the first electrode opposite the first joint to the wafer placement surface is composed of material of the ceramic substrate.

Embodiments provided herein include an apparatus and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to reducing defectivity in features formed on the surface of the substrate, improving plasma etch rate, and increasing selectivity of etching material to mask and/or etching material to stop layer. In some embodiments, the apparatus and methods enable processes that can be used to prevent or reduce the effect of trapped charges, disposed within features formed on a substrate, on the etch rate and defect formation. In some embodiments, the plasma processing methods include the synchronization of the delivery of pulsed-voltage (PV) waveforms, and alternately the delivery of a PV waveform and a radio frequency (RF) waveform, so as to allow for the independent control of generation of electrons that are provided, during one or more stages of a PV waveform cycle, to neutralize the trapped charges formed in the features formed on the substrate.

A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

An electrostatic chuck includes a ceramic body and adapter objects. The adapter objects collectively form a plurality of openings distributed over a bottom surface of the ceramic body at different distances from a center of a circle defined by the bottom surface of the ceramic body.

A heater includes a base, a resistive heating body, and a terminal portion. The base is formed of ceramic and has a plate shape. The resistive heating body is located in the base. The terminal portion is electrically connected to the resistive heating body. The base includes a protruding portion surrounding the terminal portion, on a lower surface side. The protruding portion is formed of a ceramic member, and the terminal portion passes through a through hole formed in the ceramic member. The ceramic member is bonded to at least one of the lower surface of the base or the terminal portion.

A ceramic joined body (1) includes: a pair of ceramic plates (2,3) that include a conductive material; and a conductive layer (4) and an insulating layer (5) that are interposed between the pair of ceramic plates (2, 3), a porosity at an interface between the pair of ceramic plates (2, 3) and the insulating layer (5) is 4% or less, and a ratio of an average primary particle diameter of an insulating material which forms the insulating layer (5) to an average primary particle diameter of an insulating material which forms the ceramic plates (2, 3) is more than 1.

The present disclosure describes an apparatus. The apparatus includes a chuck for placing an object thereon, a gas passage extending along a periphery of an outer sidewall of the chuck and separating the chuck into an inner portion and a sidewall portion, and a plurality of gas holes through the sidewall portion and configured to connect a gas external to the chuck to the gas passage.

There is provision of a stage including a base; a substrate mount section provided above an upper surface of the base; an annular member mount section provided above the upper surface of the base, so as to surround a periphery of the substrate mount section; a first bonding layer bonding the base and the substrate mount section; a second bonding layer bonding the base and the annular member mount section; an annular member disposed on the annular member mount section; and a sealing member configured to protect the first bonding layer and the second bonding layer.

A substrate fixing device includes a base plate including therein a gas supply section, and an electrostatic chuck provided on the base plate. The electrostatic chuck includes a base having a mounting surface on which a target to be held by electrostatic attraction is mounted, an insertion hole, penetrating the base, having an inner surface that defines the insertion hole and is threaded to form a female thread, and a screw member, having an outer surface that is threaded to form a male thread, and inserted into the insertion hole to assume a mated state in which the male thread mates with the female thread. A gas from the gas supply section is supplied to the mounting surface via the screw member.

A sample holder includes: a base body including a ceramic material; a support body including a metal material; a first joining layer which joins a lower face of the base body and an upper face of the support body together; a first through hole extending from a lower face of the support body through the first joining layer to the upper face of the base body, a part of the first through hole located within the base body being at least partly narrower than a part of the first through hole located within the support body and a part of the first through hole located within the first joining layer; and a porous member located inside the first through hole and joined to the lower face of the base body via a second joining layer.