Embodiments disclosed herein may include a heater pedestal. In an embodiment, the heater pedestal may comprise a heater pedestal body and a conductive mesh embedded in the heater pedestal. In an embodiment, the conductive mesh is electrically coupled to a voltage source In an embodiment, the heater pedestal may further comprise a support surface on the heater pedestal body. In an embodiment, the support surface comprises a plurality of pillars extending out from the heater pedestal body and arranged in concentric rings. In an embodiment pillars in an outermost concentric ring have a height that is greater than a height of pillars in an innermost concentric ring.

An electrostatic chuck is formed by depositing a diffuser layer onto an electrostatic puck and removing areas of the diffuser layer to form discrete diffuser segments separated by gaps. The discrete diffuser segments may define continuous concentric rings, discontinuous concentric rings, or a combination of continuous concentric rings and discontinuous concentric rings. The discrete diffuser segments are separated from each other by forming at least one trench in the diffuser layer. The trench may extend partially through the diffuser layer, completely through the diffuser layer to the electrostatic puck, or have a first portion that extends partially through the diffuser layer and a second portion that extends completely through the diffuser layer. Also, the trench can have a constant width or have a variable width.

An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.

A mounting table includes a substrate mounting area for placing a substrate; a focus ring mounting area for placing a focus ring, so that the focus ring surrounds the substrate mounting area; an electrode that electrostatically attracts the focus ring; ring-shaped first and second elastic bodies, wherein the second elastic body is placed at an inner side in a radial direction compared to the first, elastic body, and the first elastic body and the second elastic body directly contact a back surface of the focus ring, the focus ring mounting area includes a recess that is provided with a supply hole that supplies a heat transfer gas to the recess, the electrode extends inward and outward in a radial direction with respect to a location of the supply hole, and the first elastic body and the second elastic body are placed in the recess.

A substrate processing system for processing a substrate within a processing chamber includes a matching network, a tuning circuit, and a controller. The matching network receives a first RF signal having a first frequency from a RF generator and impedance matches an input of the matching network to an output of the RF generator. The tuning circuit is distinct from the matching network and includes a circuit component having a first impedance. The tuning circuit receives an output of the matching network and outputs a second RF signal to a first electrode in a substrate support. The controller determines a target impedance for the circuit component, and based on the target impedance, signal the RF generator to adjust the first frequency of the first RF signal received at the matching network to a second frequency to alter the first impedance of the circuit component to match the target impedance.

Exemplary substrate support assemblies may include an electrostatic chuck body that defines a substrate support surface. The substrate support surface may define a plurality of protrusions that extend upward from the substrate support surface. A density of the plurality of protrusions within an outer region of the substrate support surface may be greater than in an inner region of the substrate support surface. The substrate support assemblies may include a support stem coupled with the electrostatic chuck body. The substrate support assemblies may include an electrode embedded within the electrostatic chuck body.

A holding device includes: a plate-shaped member having a first surface approximately orthogonal to a first direction; heat generating resistors and temperature measuring resistors disposed in respective segments formed by virtually dividing at least part of the plate-shaped member, the segments being arranged in a direction orthogonal to the first direction; and an electricity supply section that forms electricity supply paths for the heat generating resistors and the temperature measuring resistors. The holding device holds an object on the first surface of the plate-shaped member. The position of the temperature measuring resistors in the first direction differs from the position of the heat generating resistors in the first direction. A specific temperature measuring resistor that is at least one of the temperature measuring resistors includes a plurality of resistor elements disposed at different positions in the first direction and connected to one another in series.

A method includes transmitting a radiation toward an electrostatic chuck, receiving a reflection of the radiation, analyzing the reflection of the radiation, determining whether a particle is present on the electrostatic chuck based on the analyzing the reflection of the radiation, and moving a cleaning tool to a location of the particle on the electrostatic chuck when the determination determines that the particle is present.

Embodiments described herein are applicable for use in all types of plasma assisted or plasma enhanced processing chambers and also for methods of plasma assisted or plasma enhanced processing of a substrate. More specifically, embodiments of this disclosure include a broadband filter assembly, also referred to herein as a filter assembly, that is configured to reduce and/or prevent RF leakage currents from being transferred from one or more RF driven components to a ground through other electrical components that are directly or indirectly electrically coupled to the RF driven components and ground with high input impedance (low current loss) making it compatible with shaped DC pulse bias applications.

Holding apparatus 100 for electrostatic holding component 1 (e.g., semiconductor wafer), includes base body 10 with at least one plate 10A, protruding burls 11 on upper side of plate and end faces 12 of which span a burls support plane for supporting component, and electrode device 20 in layered form in spacings between burls and insulator layer 21 which is connected to plate, dielectric layer 23 of inorganic dielectric and electrode layer 22 between insulator and dielectric layers. Between burls support plane and dielectric layer upper side, predetermined gap spacing A is set. Electrode device has openings 24 and is on plate upper side between burls, which protrude therethrough. Insulator layer includes inorganic dielectric and is connected with adhesive 13 to base body upper side between burls. Electrode device is embedded in adhesive. Spacing between burls and electrode device is filled with adhesive. A production method is also described.