H01L21/6833

PLASMA PROCESSING EQUIPMENT

Plasma processing equipment includes a chuck stage for supporting a wafer and including a lower electrode, an upper electrode disposed on the chuck stage, an AC power supply which applies first to third signals having different magnitudes of frequencies to the upper electrode or the lower electrode, a dielectric ring which surrounds the chuck stage, an edge electrode located within the dielectric ring, and a resonance circuit connected to the edge electrode. The resonance circuit includes a filter circuit which allows only the third signal among the first to third signals to pass, and a series resonance circuit connected in series with the filter circuit and having a first coil and a first variable capacitor connected in series and grounded.

Filter device and plasma processing apparatus

Provided is a filter device including a plurality of coils, a plural of capacitors, and a frame. The coils constitute a plurality of coil groups. Each coil group includes two or more coils. The two or more coils in each coil group are provided such that respective windings of the two or more coils extend spirally about a central axis and respective turns of the two or more coils are sequentially and repeatedly arranged in an axial direction in which the central axis extends. The coil groups are provided coaxially with the central axis. A pitch between the respective turns of the two or more coils of any one coil group among the coil groups is larger than a pitch between the respective turns of the two or more coils of the coil group provided inside the one coil group among the coil groups.

Substrate processing apparatus and substrate processing method
11495444 · 2022-11-08 · ·

In a processing chamber, a processing target substrate is placed and a substrate processing is performed. A holder is configured to store therein an ionic liquid as some or all of components to be consumed or degraded by the substrate processing within the processing chamber.

Devices, systems and methods for electrostatic force enhanced semiconductor bonding
11574834 · 2023-02-07 · ·

Various embodiments of microelectronic devices and methods of manufacturing are described herein. In one embodiment, a method for enhancing wafer bonding includes positioning a substrate assembly on a unipolar electrostatic chuck in direct contact with an electrode, electrically coupling a conductor to a second substrate positioned on top of the first substrate, and applying a voltage to the electrode, thereby creating a potential differential between the first substrate and the second substrate that generates an electrostatic force between the first and second substrates.

Wafer support table with ceramic substrate including core and surface layer
11574822 · 2023-02-07 · ·

A ceramic heater includes a ceramic substrate including, on an upper surface, a wafer mount surface that receives a wafer, and a heater electrode embedded in an inside of the ceramic substrate. The ceramic substrate includes a core portion and a surface layer portion disposed on a surface of the core portion. The surface layer portion has volume resistivity higher than volume resistivity of the core portion. The core portion has thermal conductivity higher than thermal conductivity of the surface layer portion. The surface layer portion is disposed over an area of at least one of a side surface of the core portion and an upper surface of the core portion, the area being not covered with the wafer.

ELECTROSTATIC CHUCK DEVICE
20230100462 · 2023-03-30 ·

An electrostatic chuck device is provided in which the occurrence of cracking in a ceramic layer, the cracking being caused by a difference in thermal expansion between a substrate and a sleeve due to heat generated during formation of the ceramic layer, is suppressed. The electrostatic chuck device includes a substrate, a laminated body that is laminated on the substrate and that includes at least an internal electrode, and a ceramic layer that is laminated on the upper surface of the laminated body in the thickness direction. The electrostatic chuck device is such that the substrate has a through-hole provided so as to pass through in the thickness direction, a sleeve formed from an insulating material is inserted into the through-hole, and the sleeve is joined to the through-hole via a joining means at an upper portion of the substrate in the thickness direction.

METHOD OF MOUNTING CONDUCTIVE BALLS USING ELECTROSTATIC CHUCK
20230093905 · 2023-03-30 · ·

Provided is a conductive ball mounting method using an electrostatic chuck. According to the conductive ball mounting method using an electrostatic chuck, when the process of mounting conductive balls onto a substrate through mounting grooves formed in the mask is performed, the occurrence of process defects can be prevented and conductive balls having very small sizes can be effectively mounted on the substrate. According to the conductive ball mounting method using the electrostatic chuck of the disclosure, the process of mounting conductive balls can be performed with high quality by preventing deformation of the mask without missing of some of the conductive balls. According to the conductive ball mounting method using the electrostatic chuck of the disclosure, the process of mounting small sizes of conductive balls on the substrate can be effectively performed.

Robot blade having multiple sensors for multiple different alignment tasks

A robot for transferring a wafer is disclosed. A blade of the robot includes a first sensor on an upper surface of the blade and the second sensor on a back surface of the blade. The first sensor is operable to align the blade with a wafer. The second sensor is operable to align the blade with a holder that holds the wafer.

Electrostatic chuck device
11575335 · 2023-02-07 · ·

The present disclosure provides an electrostatic chuck device capable of uniformly cooling or heating a fixedly adsorbed substrate. The electrostatic chuck device includes an electrostatic chuck plate, a bonding layer, and a base. The bonding layer has a bonding agent bonded to a rear surface of the electrostatic chuck plate. The base has a bonding surface bonded to the bonding layer and a plurality of protrusions radially extending from a central part toward an outer circumferential surface of the bonding surface. The ends of the respective protrusions on the central part may be arranged at intervals.

Electrostatic chuck

An electrostatic chuck fixes a substrate and includes a first area and a second area adjacent to the first area. The electrostatic chuck includes a first electrode portion disposed in the first area and a second electrode portion disposed in the second area. The first electrode portion has a first width, and the second electrode portion has a second width smaller than the first width.