A pedestal assembly is provided. The pedestal assembly includes an electrostatic chuck configured to support a workpiece. The pedestal assembly includes a focus ring have a top surface and a bottom surface. The focus ring can be configured to surround a periphery of the workpiece when the workpiece is positioned on the electrostatic chuck. The pedestal assembly includes a plurality of insulators. The pedestal assembly further includes a conductive member positioned between at least a portion of the bottom surface of the focus ring and at least a portion of one of the plurality of insulators.

A member for semiconductor manufacturing apparatus includes: an upper plate that has a wafer placement surface, contains no electrode, and is a ceramic material plate; an intermediate plate that is provided on a surface of the upper plate, opposite to the wafer placement surface, that is used as an electrostatic electrode, and that is a conductive material plate; and a lower plate that is joined to a surface of the intermediate plate, opposite to the surface on which the upper plate is provided, and that is a ceramic material plate.

Provided is a substrate treating method of removing a thin film formed on a substrate. The substrate treating method includes a reaction process of transferring an etchant to the thin film, and a removal process of removing process by-products generated by reacting the thin film with the etchant, in which the reaction process and the removal process are repeated at least twice or more, and any one of the removal processes is to remove partially the process by-products.

This disclosure describes systems, methods, and apparatus for non-invasive wafer chuck monitoring using a low voltage AC signal injected into a high voltage DC chucking voltage provided to a wafer chuck. Monitoring the injected signal can provide insight into the wafer chucking state and remedial actions, such as realignment of the wafer with the wafer chuck, can be carried out. Because of the low voltage nature of the AC signal, wafer chuck monitoring can be performed without influencing chucking performed by the higher voltage DC chucking voltage.

Provided is a supporting unit supporting a substrate. The supporting unit may include: a plate; heating elements provided to the plate and controlling a temperature of a substrate, wherein the heating elements are arranged to control temperatures of different areas of the substrate; and a power supply module supplying power to the heating element, and the power supply module may be configured to continuously supply the power to at least two heating elements of the heating elements.

A substrate support assembly includes: a base including a flow path for a temperature control medium; a substrate support including an electrode plate installed on the base and an electrostatic chuck installed on the electrode plate, and configured to support a substrate; a heater configured to heat the substrate; an elastic member installed between the base and the electrode plate, configured to separate the substrate support from the base, and configured to define a heat transfer space between the base and the electrode plate, a heat transfer gas being supplied into the heat transfer space; a tightening member configured to fasten the base and the electrode plate to each other, with the elastic member sandwiched and supported between the base and the electrode plate; and a heat insulator configured to prevent heat transfer between the base and the electrode plate via the elastic member.

A chuck for heating and clamping a workpiece, such as a semiconductor workpiece, is disclosed. The chuck is configured to allow the workpiece to be heated to temperatures in excess of 600° C. Further, while the workpiece is heating, the components that make up the chuck may be maintained at a much lower temperature, such as room temperature. The chuck includes a housing, formed as a hollow cylinder with sidewalls and an open end. Electrodes are disposed at the top surface of the sidewalls to clamp the workpiece. A heat source is disposed in the cavity and emits radiated heat toward the workpiece. A clamp ring may be used to secure the workpiece. In some embodiments, a thermal sensor is used to monitor the temperature of the workpiece.

A wafer support table in which an RF electrode and a heater electrode are buried inside a circular-plate-shaped ceramic substrate having a wafer placing surface in this order from a wafer placing surface side, wherein the RF electrode is constituted by a plurality of RF zone electrodes provided in respective zones on an identical plane, and the plurality of RF zone electrodes and the heater electrode are independently connected to a plurality of conductors for RF zone electrode and a conductor for heater electrode that are provided on an outer side of a surface of the ceramic substrate opposite to the wafer placing surface.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having a treating space; and a support unit configured to support and heat a substrate in the treating space, and wherein the support unit includes: at least one heating element for adjusting a temperature of the substrate; a power source for generating a power applied to at least one heating element; a power supply line for transmitting the power generated by the power source to the at least one heating element; a power return line for grounding the at least one heating element; and a current measuring resistor provided on the power supply line or the power return line and used for estimating a temperature of the at least one heating element.

A bevel mask for use in plasma CVD apparatus for depositing a more uniform film while preventing film peeling at the edges of the wafer. The bevel mask includes a bulk portion and an edge portion. The bulk portion includes an inner beveled surface or face, and the edge portion extends outward from a bottom section of the inner beveled surface to provide a covering for a peripheral portion of the upper surface of a wafer received on the susceptor, which supports the annular-shaped mask such as upon a ring structure on an upper surface of the susceptor.