Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

A method for manufacturing an electrostatic chuck with multiple chucking electrodes made of ceramic pieces using metallic aluminum as the joining. The aluminum may be placed between two pieces and the assembly may be heated in the range of 770 C to 1200 C. The joining atmosphere may be non-oxygenated. After joining the exclusions in the electrode pattern may be machined by also machining through one of the plate layers. The machined exclusion slots may then be filled with epoxy or other material. An electrostatic chuck or other structure manufactured according to such methods.

Systems, apparatuses, and methods are provided for manufacturing an electrostatic clamp. An example method can include forming, during a first duration of time comprising a first time, a top clamp comprising a first set of electrodes and a plurality of burls. The method can further include forming, during a second duration of time comprising a second time that overlaps the first time, a core comprising a plurality of fluid channels configured to carry a thermally conditioned fluid. The method can further include forming, during a third duration of time comprising a third time that overlaps the first time and the second time, a bottom clamp comprising a second set of electrodes. In some aspects, the example method can include manufacturing the electrostatic clamp without an anodic bond.

A member for semiconductor manufacturing apparatus has a ceramic plate, a porous plug, an insulating lid, and pores. The ceramic plate has a wafer placement surface as an upper surface. The porous plug is disposed in a plug insertion hole penetrating the ceramic plate in an up-down direction, and allows a gas to flow. The insulating lid is provided in contact with an upper surface of the porous plug, and exposed to the wafer placement surface. A plurality of pores are provided in the insulating lid, and penetrate the insulating lid in an up-down direction.

Methods and apparatus reduce chucking abnormalities for electrostatic chucks by ensuring proper planarizing of ceramic surfaces of the electrostatic chuck. In some embodiments, a method for planarizing an upper ceramic surface of an electrostatic chuck assembly may comprise placing the electrostatic chuck assembly in a first planarizing apparatus, altering an upper ceramic surface of the electrostatic chuck assembly, and halting the altering of the upper ceramic surface of the electrostatic chuck assembly when an S.sub.a parameter is less than approximately 0.1 microns, an S.sub.dr parameter is less than approximately 2.5 percent, an S.sub.z parameter is less than approximately 10 microns for any given area of approximately 10 mm.sup.2 of the upper ceramic surface, or a pit-porosity depth parameter of greater than 1 micron is less than approximately 0.1 percent of area of the upper ceramic surface.

Disclosed herein are embodiments of a servo-control system comprising at least one pneumatic actuator comprising a movable member, at least one proportional pneumatic valve configured to control fluid flow between the at least one pneumatic actuator and a pressurized fluid supply or a vent, a plurality of pressure sensors each configured to independently measure pressure in a respective supply line to the at least one pneumatic actuator, at least one position sensor configured to measure a position of the moveable member, and a controller. The controller is configured to determine a control signal based at least in part on pressure measurements of the plurality of pressure sensors and a position measurement of the at least one position sensor, and apply the control signal to at least one proportional pneumatic valve to move the movable member to a target position.

The present disclosure relates to a fixture, the fixture is a fixture for a semiconductor etching machine, and the fixture includes: a support mechanism, configured to be arranged on an outer base of an electrostatic chuck of the semiconductor etching machine; a cleaning mechanism, being rotatably arranged on the support mechanism; and at least one cleaning unit, being arranged on the cleaning mechanism.

The inventive concept provides a substrate treating method. The substrate treating method for treating a substrate at which thin films are stacked and a hole is formed thereon including treating the substrate using a first plasma including an ion, which is a first treating step; and treating the substrate using a second plasma removed of an ion, which is a second treating step.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a housing defining a treating space; a chuck supporting a substrate at the treating space and providing a bottom electrode for generating a plasma at the treating space; a top electrode; and an ion blocker positioned between the top electrode and the treating space.

A pre-aligner includes a base, a rotating unit, a platform and a sensing unit. The rotating unit includes a motor and an axle. The motor is inserted in the base. The axle is rotated by the motor. The platform is coaxially connected to the axle and includes electrodes for generating an electrostatic field for attracting the substrate. The sensing unit includes a box and a sensor. The box is located on the base. The sensor is movable in the box to sense the orienting portion of the substrate.