Methods and systems for reducing substrate particle scratching using machine learning are provided. A machine learning model is trained to predict process recipe settings for a substrate temperature control process to be performed for a current substrate at a manufacturing system. First training data and second training data are generated for the machine learning model. The first training data includes historical data associated with prior process recipe settings for a prior substrate temperature control process performed for a prior substrate at a prior process chamber. The second training data is associated with a historical scratch profile of one or more surfaces of the prior substrate after performance of the prior substrate temperature control process according to the prior process recipe settings. The first training data and the second training data are provided to train the machine learning model to predict which process recipe settings for the substrate temperature control process to be performed for the current substrate correspond to a target scratch profile for one or more surfaces of the current substrate.

Provided is a mounting stage on which a substrate to be subjected to a plasma process is mounted. The mounting stage includes: an electrostatic chuck configured to attract the substrate and an edge ring disposed around the substrate; and supply holes through which a heat medium is supplied to a space between the electrostatic chuck and the edge ring. A groove is provided in at least one of the edge ring and the mounting stage, and the groove is not in communication with the supply holes.

An apparatus includes an electrostatic chuck and located within a vacuum enclosure. A plurality of conductive plates can be embedded in the electrostatic chuck, and a plurality of plate bias circuits can be configured to independently electrically bias a respective one of the plurality of conductive plates. Alternatively or additionally, a plurality of spot lamp zones including a respective set of spot lamps can be provided between a bottom portion of the vacuum enclosure and a backside surface of the electrostatic chuck. The plurality of conductive plates and/or the plurality of spot lamp zones can be employed to locally modify chucking force and to provide local temperature control.

An apparatus may include a clamp to clamp a substrate wherein the clamp is arranged opposing a back side of the substrate; and an illumination system, disposed to direct radiation to the substrate, when the substrate is disposed on the clamp, wherein the radiation comprises a radiation energy, equal to or above a threshold energy to generate mobile charge in the substrate, where the illumination system is disposed to direct radiation to the back side of the substrate.

A plasma processing apparatus, comprising a plasma processing chamber; a plasma generator to generate a plasma from a processing gas in the plasma processing chamber; and a substrate support disposed in the plasma processing chamber, is provided. The substrate support includes a base; an electrostatic chuck disposed above the base; a first annular member to surround a substrate on the substrate support; a second annular member disposed below the first annular member and having a plurality of through holes; a plurality of lift pins disposed to correspond to the respective through holes, each lift pin having an upper portion to support the first annular member through the corresponding through hole and a lower portion; at least one spacer fixed to at least one of the lift pins, disposed on the lower portion so as to surround the upper portion and support the second annular member; and at least one actuator to vertically move the lift pins.

A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.

A method and apparatus for aligning components within a processing module are described herein. The components include a substrate transfer device, a plurality of support chuck assemblies, and adjustable bushings disposed in the processing module. The substrate transfer device includes support arms with heads configured to passively correct the location of a substrate therein. The orientation of each of the support arms of the substrate transfer device is adjusted to align with each of the support chuck assemblies. The location of a process station is then adjusted to align with one of the support chuck assemblies by calibrating the adjustable bushings which correspond to each process station.

An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

A plurality of heating zones in a substrate support assembly in a chamber is independently controlled. Temperature feedback from a plurality of temperature detectors is provided as a first input to a process control algorithm, which may be a closed-loop algorithm. A second input to the process control algorithm is targeted values of heater temperature for one or more heating zones, as calculated using a model. Targeted values of heater power needed for achieving the targeted values of heater temperature for the one or more heating zones is calculated. Chamber hardware is controlled to match the targeted value of heater temperature that is correlated with the wafer characteristics corresponding to the current optimum values of the one or more process parameters.

A member for a semiconductor manufacturing apparatus includes a disk-shaped or annular ceramic heater, a metal base, an adhesive element bonding the metal base and the ceramic heater, an adhesive protective element disposed between the ceramic heater and the metal base to extend along a periphery of the adhesive element, and an anti-adhesion layer disposed between the adhesive element and the protective element, the anti-adhesion layer preventing adhesion between the adhesive element and the protective element.