Provided is a chip component manufacturing method which enables a plurality of chip pieces to be handled while being pasted to a sheet, and in which it is possible to apply at least a surface treatment to a plurality of chip pieces while being pasted to a sheet. This chip component manufacturing method comprises: a step for retaining a green sheet or the like on a carrier sheet; a step for cutting, together with a portion of the carrier sheet, the green sheet or the like retained on the carrier sheet; a step for removing, together with a portion of the carrier sheet, at least a dummy portion of the green sheet or the like that has been cut, so as to leave a plurality of chip pieces on the carrier sheet; and a step for applying at least a surface treatment to lateral surface portions of the plurality of chip pieces that have become exposed due to the removing while the plurality of chip pieces are being retained on the carrier sheet.

Methods and apparatus for pre-treating semiconductor wafers before edge trimming to enhance wafer edge quality prior to thinning the semiconductor wafers from an initial thickness, and increasing yield post-thinning of the pre-treated, edge trimmed semiconductor wafers.

A method for manufacturing a semiconductor element according to the present disclosure includes an element layer forming step of forming a semiconductor element layer on a first surface of a ground substrate; a first supporting substrate preparing step of positioning a first supporting substrate that has a third surface and has a bonding material located on the third surface so that the third surface faces the first surface; a pressing step of causing the bonding material to enter a gap between the ground substrate and the semiconductor element layer; and a peeling step of peeling off the first supporting substrate, the bonding material, and the semiconductor element layer from the ground substrate.

A pickup apparatus for separating a semiconductor die adhered on an adhesive film therefrom includes a frame, an UV light emitting element, and a collector element. The frame is configurated to hold the adhesive film adhered with the semiconductor die thereon. The UV light emitting element is disposed inside the frame, where the adhesive film is disposed between the semiconductor die and the UV light emitting element. The collector element is disposed over the frame.

Structures and formation methods of a chip package structure are provided. The chip package structure includes adjacent first and second semiconductor dies bonded over an interposer substrate. The chip package structure also includes an insulating layer formed over the interposer substrate. The insulating layer has a first portion surrounding the first and second semiconductor dies and a second portion extending between a first sidewall of the first semiconductor die and a second sidewall of the second semiconductor die, and between the interposer substrate and the first and second semiconductor dies. The lateral distance from the top end of the first sidewall to the top end of the second sidewall is greater than the lateral distance from the bottom end of the first sidewall to the bottom end of the second sidewall.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a redistribution structure, conductive joints, conductive terminals, a circuit substrate, and an insulating encapsulation. The redistribution structure includes a first side and a second side opposite to the first side, wherein trenches are located on the second side of the redistribution structure and extend to an edge of the second side of the redistribution structure. The conductive joints are disposed over the first side of the redistribution structure. The conductive terminals are disposed over the second side of the redistribution structure. The circuit substrate electrically coupled to the redistribution structure through the conductive joints. The insulating encapsulation is disposed on the first side of the redistribution structure to cover the circuit substrate.

The invention describes a fabricating method for fabricating semiconductor package device which includes the following steps: providing a wafer having a plurality of dies, wherein each of the dies is provided on a top surface thereof with a middle electric conducting structure and a solder ball; forming a molding structure having a flat top surface on a top side of the wafer; removing a part of the molding structure and exposing a part of each of the solder ball by plasma etching; performing a dicing process along a boundary of each of the dies to separate each of the dies so that the semiconductor package device is thus obtained.

Provided is a pressure-sensitive adhesive sheet for semiconductor wafer processing that is excellent in adhesiveness with a semiconductor wafer, and that has light peelability and suppresses adhesive residue. The pressure-sensitive adhesive sheet for semiconductor wafer processing includes in this order: a base material; an intermediate layer; and a UV-curable pressure-sensitive adhesive layer. The intermediate layer has a storage modulus of elasticity at room temperature, G′1.sub.RT, of from 300 kPa to 2,000 kPa, and a storage modulus of elasticity at 80° C., G′1.sub.80, of from 10 kPa to 500 kPa. The UV-curable pressure-sensitive adhesive layer has a storage modulus of elasticity at room temperature, G′2.sub.RT, of from 100 kPa to 1,000 kPa, and a storage modulus of elasticity at 80° C., G′2.sub.80, of from 10 kPa to 1,000 kPa. G′1.sub.RT/G′2.sub.RT is 1 or more.

A semiconductor device is disclosed. The semiconductor device includes a first die on a first substrate, a second die on a second substrate separate from the first substrate, a transmission line in a redistribution layer on a wafer, and a magnetic structure surrounds the transmission line. The first transmission line electrically connects the first die and the second die. The magnetic structure is configured to increase the characteristic impedance of the transmission line, which can save the current and power consumption of a current mirror and amplifier in a 3D IC chip-on-wafer-on-substrate (CoWoS) semiconductor package.

A method of semiconductor die singulation is provided. The method includes forming a first trench along a singulation lane of a semiconductor wafer. A second trench is formed extending from a bottom of the first trench. A portion of the semiconductor wafer remains between a bottom of the second trench and a backside of the semiconductor wafer. A cut is formed by way of a laser to singulate die of the semiconductor wafer. The cut extends through the portion of the semiconductor wafer remaining between the bottom of the second trench and the backside of the semiconductor wafer.