Photonic devices and methods of manufacture are provided. In embodiments a fill material and/or a secondary waveguide are utilized in order to protect other internal structures such as grating couplers from the rigors of subsequent processing steps. Through the use of these structures at the appropriate times during the manufacturing process, damage and debris that would otherwise interfere with the manufacturing process of the device or operation of the device can be avoided.

Embodiments of the inventive concept described herein relate to an apparatus and method for removing an adhesive exposed to the outside from an object being processed. The apparatus for removing the adhesive exposed to the outside from an edge region of the object being processed, in which the object has a patterned substrate and a support plate bonded together by the adhesive, The cover liquid nozzle dispenses the cover liquid onto a cover area of a top surface of the object other than the exposed area, and the controller controls the cover liquid dispensing member to adjust a flow rate of the cover liquid to cause a removal rate of the adhesive to remain constant.

A semiconductor wafer thinned by a stealth lasing process, and semiconductor dies formed therefrom. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by focusing a laser at discrete points in the wafer substrate beneath the surface of the wafer. Upon completion of stealth lasing in one or more planar layers in the substrate, a portion of the substrate may be removed, leaving the wafer thinned to a desired final thickness.

A method for evaluating an ease of splitting of a film-like adhesive under low-temperature conditions in which cooling expansion is performed, the method including: preparing a sample having a cross-sectional area A (mm.sup.2) from a film-like adhesive; determining a breaking work W (N.Math.mm), a breaking strength P (N), and a breaking elongation L (mm) of the sample by a break test under low-temperature conditions in a range of −15° C. to 0° C.; determining a breaking factor m of the sample expressed by Equation (1) below; and determining a breaking resistance R (N/mm.sup.2) of the sample expressed by Equation (2) below; and evaluating the ease of splitting based on the determined the breaking factor m and the breaking resistance R,

m=W/[1000×(P×L)]  (1)

R=P/A  (2).

Provided are: a wafer processing temporary adhesive that is for temporarily adhering a wafer to a support and that comprises a thermosetting resin composition containing a non-functional organopolysiloxane; a wafer laminate; and a thin wafer manufacturing method.

Provided is an adsorption temporary fixing sheet having a sufficient shear adhesive strength in a direction parallel to its surface, and having a weak adhesive strength in a direction vertical to the surface. Also provided is a method of producing such adsorption temporary fixing sheet. The adsorption temporary fixing sheet includes a foam layer including an open-cell structure, wherein, when a silicon chip vertical adhesive strength of a surface of the foam layer after 20 hours at each of such different temperatures as −40° C., 23° C., or 125° C. is represented by V1 (N/1 cm□), V2 (N/1 cm□), or V3 (N/1 cm□) and when a silicon chip shearing adhesive strength of the surface of the foam layer after 20 hours at each of the different temperatures (−40° C., 23° C., or 125° C.) is represented by H1 (N/1 cm□), H2 (N/1 cm□), or H3 (N/1 cm□), relationships of V1<H1, V2<H2, and V3<H3 are satisfied.

A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

A workpiece processing method includes holding a workpiece unit on a holding table and forming a division start point. The workpiece unit has a workpiece having a front side and a back side, and an additional member formed on the back side of the workpiece. The additional member is different in material from the workpiece. The workpiece unit is held on the holding table with the additional member opposed to the holding table. The division start point is formed by applying a laser beam to the front side of the workpiece with the focal point of the laser beam set inside the workpiece. The laser beam forms a modified layer inside the workpiece and simultaneously forming a division start point inside the additional member due to the leakage of the laser beam from the focal point toward the back side of the workpiece.

A process for bonding chips to a substrate by direct bonding includes providing a support with which the chips are in contact, the chips in contact with the support being separate from one another. This bonding process also includes forming a liquid film on one face of the substrate, bringing the chips into contact with the liquid film, where the action of bringing the chips into contact with the liquid film causes attraction of the chips toward the substrate, and evaporating the liquid film in order to bond the chips to the substrate by direct bonding.