A temperature control device includes: a top plate that supports a substrate; a base plate connected to the top plate so as to form an internal space with the top plate; a thermoelectric module plate arranged in the internal space; a heat exchange plate that is arranged in the internal space and exchanges heat with the thermoelectric module plate; and a sealing member that comes into contact with each of the top plate and the base plate.

Described herein is a technique capable of improving a heating efficiency for a substrate to be heated by a heater. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel defining a process chamber; a process gas supplier configured to supply a process gas into the process vessel; an electromagnetic field generation electrode extending along an outer peripheral surface of the process vessel while being spaced apart from the outer peripheral surface of the process vessel and configured to generate an electromagnetic field in the process vessel by being supplied with a high frequency power; a heater configured to radiate an infrared light to heat a substrate accommodated in the process chamber; and a reflector provided between the process vessel and the electromagnetic field generation electrode and configured to reflect the infrared light radiated from the heater.

A method of aligning a wafer includes defining a reference direction for aligning the wafer; capturing an image of the wafer held on a chuck; using an identifying module to analyze a straight line on the image of the wafer; calculating an offset angle between the straight line and the reference direction; and calibrating the offset angle to align the straight line with the reference direction by way rotating the chuck.

A die matrix expander includes a subring including ≥3 pieces, and a wafer frame supporting a dicing tape having an indentation for receiving pieces of the subring. The subring prior to expansion sits below a level of the wafer frame and has an outer diameter <an inner diameter of the wafer frame. A translation guide coupled to the subring driven by mechanical force applier moves the subring pieces in an angled path upwards and outwards for stretching the dicing tape including to a top most stretched position above the wafer frame that is over or outside the wafer frame. A cap placed on the pieces of the subring after being fully expanded over the dicing tape locks the dicing tape in the top most stretched position and secures the pieces of the expanded subring in place including when within the indentation during an additional expansion during a subsequent die pick operation.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

A placing table configured to place a substrate on an electrostatic chuck includes a base; the electrostatic chuck placed on a placing surface of the base; and a path formed within the placing table along the placing surface, and configured to allow a heat exchange medium to flow therein from an inlet opening to an outlet opening of the heat exchange medium. A distance between a top surface of the path and the placing surface is constant from the inlet opening to the outlet opening. A cross sectional shape of the path in a direction perpendicular to the top surface is differed depending on a position in the path.

A plasma processing apparatus includes a stage provided in a chamber and having a heater therein, the stage being configured to place a substrate thereon, and an annular member provided around the stage to be spaced apart therefrom and formed of a dielectric material. At least one annular groove is formed in a lower surface of the annular member in a radial direction.

A grinding equipment includes: a frame which has a central shaft disposed collinearly to one side of the polishing wheel and rotates about the central shaft; a plurality of seating portions which are disposed on the upper side of the frame, each have a space formed in the central portion thereof, seat a workpiece on the upper surfaces thereof, and are arranged radially from the central shaft of the frame; a plurality of vacuum portions which are disposed in the central portions of the plurality of seating portions respectively, seat the workpiece on the upper surfaces thereof, and each have a plurality of flow channels so as to secure the workpiece by suctioning air through the flow channels; and a control unit for controlling the rotation of the frame.

A method of selectively transferring micro devices from a donor substrate to contact pads on a receiver substrate. Micro devices being attached to a donor substrate with a donor force. The donor substrate and receiver substrate are aligned and brought together so that selected micro devices meet corresponding contact pads. A receiver force is generated to hold selected micro devices to the contact pads on the receiver substrate. The donor force is weakened and the substrates are moved apart leaving selected micro devices on the receiver substrate. Several methods of generating the receiver force are disclosed, including adhesive, mechanical and electrostatic techniques.

There is provided a substrate processing apparatus which includes: an exhaust pipe configured to selectively discharge an exhaust gas generated by a substrate process to a first pipe or a second pipe; a liquid supply part configured to supply a cleaning liquid to the exhaust pipe; a discharge destination setting part configured to set a discharge destination of the exhaust gas to the first pipe or the second pipe by rotating the exhaust pipe; and a controller configured to control the discharge destination setting part to rotate the exhaust pipe. The controller is further configured to control the liquid supply part to supply the cleaning liquid to the rotating exhaust pipe.