Provided are a die pickup module and a die bonding apparatus including the same. The die pickup module includes a wafer stage for supporting a wafer including dies attached on a dicing tape, a die ejector arranged under the dicing tape and for separating a die to be picked up from the dicing tape, a non-contact picker for picking up the die in a non-contact manner so as not to contact a front surface of the die, a vacuum gripper for partially vacuum adsorbing a rear surface of the die picked up by the non-contact picker and an inverting driving unit for inverting the vacuum gripper to invert the die so that a rear surface of the die gripped by the vacuum gripper faces upward.

A support device includes a support that supports an object to be tested and that includes a flow path inside, the flow path having an inlet and an outlet, and the flow path being configured to flow a first temperature adjusting medium from the inlet to the outlet, a mixer configured to discharge a third temperature adjusting medium, the first temperature adjusting medium flowing out from the outlet and a second temperature adjusting medium externally supplied being mixed at a ratio that is predetermined in the third temperature adjusting medium, a medium transfer configured to transfer the third temperature adjusting medium to the inlet as the first temperature adjusting medium, and a heater configured to heat the first temperature adjusting medium or the third temperature adjusting medium.

An object of the present invention is to reduce non-uniformity of etching in a plane of a wafer. An electrostatic chuck device includes: an electrostatic chuck part having a sample mounting surface on which a sample is mounted and having a first electrode for electrostatic attraction; a cooling base part placed on a side opposite to the sample mounting surface with respect to the electrostatic chuck part to cool the electrostatic chuck part; and an adhesive layer that bonds the electrostatic chuck part and the cooling base part together, in which the cooling base part has a function of a second electrode that is an RF electrode, a third electrode for RF electrode or LC adjustment is provided between the electrostatic chuck part and the cooling base part, and the third electrode is bonded to the electrostatic chuck part and the cooling base part and insulated from the cooling base part.

A bonding apparatus includes a first holder, a second holder, a moving unit, a first transforming unit, a second transforming unit and a controller. The first holder holds a first substrate from above. The second holder is provided below the first holder, and holds a second substrate from below. The moving unit moves the first holder and the second holder relative to each other. The first transforming unit makes a central portion of the first substrate held by the first holder protruded downwards. The second transforming unit makes a central portion of the second substrate held by the second holder protruded upwards. The controller performs a control of bringing the central portions into contact with each other. The controller performs a control of changing a protruding amount of the central portion of the first substrate according to a protruding amount of the central portion of the second substrate.

A semiconductor wafer cooling system and method and a pressure regulating apparatus for mitigating pressure increases in a semiconductor wafer conditioning circuit are disclosed. The pressure regulating apparatus comprises: a buffer vessel, the buffer vessel comprising an inlet and outlet channel; wherein the inlet channel is configured in operation to be in fluid communication with a higher pressure location of the semiconductor wafer conditioning circuit, and the outlet channel is configured in operation to be in fluid communication with a lower pressure location. the inlet channel comprises a pressure controlled valve configured to close the inlet channel during normal operation such that the buffer vessel is isolated from the higher pressure location of the conditioning circuit and to open the inlet channel in response to the pressure within the semiconductor conditioning circuit rising above a predetermined level.

An inspection device is an inspection device that inspects a semiconductor substrate. The inspection device includes a stage, a first ring, and a second ring. A first recess is provided on an upper surface of the stage. The first recess has a ring shape in plan view. The first ring is elastic. The first ring is disposed in the first recess. The second ring presses the first ring in an inward direction of the ring shape so as to press the first ring toward an inner side surface of a side surface of the first recess. The first ring projects toward an upper side further than the upper surface of the stage. In the stage, an exhaust hole is provided. The semiconductor substrate placed on the first ring is vacuum-sucked with exhaustion through the exhaust hole.

A wafer placement table includes a ceramic base having a wafer placement surface on its top surface where a wafer is able to be placed and incorporating an electrode; a cooling base having a refrigerant flow channel; and a bonding layer that bonds the ceramic base with the cooling base, wherein in an area that overlaps the wafer placement surface in plan view of the refrigerant flow channel, a cross-sectional area of the refrigerant flow channel at a most downstream part of the refrigerant flow channel is less than the cross-sectional area at a most upstream part of the refrigerant flow channel.

A chucking system reduces differences in chucking forces that are applied by two electrodes of an electrostatic chuck, to a substrate disposed atop the chuck. Initial chucking voltages are applied to each of two electrodes, and an initial current provided to at least a first electrode of the two electrodes is measured. A process is initiated that affects a DC voltage of the substrate, then a modified current provided to at least the first electrode is measured. A modified chucking voltage for a selected one of the two electrodes is determined that will reduce chucking force imbalance across the substrate based at least on the initial current and the modified current. The modified chucking voltage is then provided to the selected one of the two electrodes.

A support apparatus for plasma adjustment includes a storage part storing index value estimation data including data defining an amount of change in an index value between adjustment positions for each of the adjustment parts, the index value corresponding to electron density of plasma, an input part for inputting a measurement result of the index value obtained when plasma is generated and the adjustment positions of the adjustment parts, and a data processing part configured to estimate the index value for each of adjustment positions of the adjustment parts based on input items input to the input part and the estimation data and configured to select proper combinations of the adjustment positions of the adjustment parts based on combinations of the adjustment positions of the adjustment parts and estimated values of a plurality of index values in the circumferential direction corresponding to the respective combinations.

A wafer inspection apparatus includes a support structure including a frame and vacuum chucks mounted thereon, each vacuum chuck having a support surface including a vacuum suction portion, the support structure configured to structurally support a wafer on one or more vacuum chucks, the frame defining an opening larger than an area of the wafer. The wafer inspection apparatus includes an electromagnetic wave emitter configured to irradiate an inspection electromagnetic wave to the wafer, a sensor configured to receive the inspection electromagnetic wave from the wafer based on the inspection electromagnetic wave passing through the wafer, and a driver configured to move at least one of the electromagnetic wave emitter or the frame to change an irradiation location of the wafer. Each vacuum chuck is configured to be selectively movable between a first location and a second location in relation to the frame.