There is provided a semiconductor manufacturing device, including: a processing vessel; a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section; a substrate holding member disposed in the growth section; a source gas supply system that supplies a source gas into the growth section; a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and a heater that heats the growth section and the cleaning section.

A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

There is provided a substrate processing apparatus which includes: an exhaust pipe configured to selectively discharge an exhaust gas generated by a substrate process to a first pipe or a second pipe; a liquid supply part configured to supply a cleaning liquid to the exhaust pipe; a discharge destination setting part configured to set a discharge destination of the exhaust gas to the first pipe or the second pipe by rotating the exhaust pipe; and a controller configured to control the discharge destination setting part to rotate the exhaust pipe. The controller is further configured to control the liquid supply part to supply the cleaning liquid to the rotating exhaust pipe.

A processing method in one embodiment includes: a step that takes an image of the end face of a reference substrate, whose warp amount is known, over the whole periphery thereof using a camera to obtain shape data of the end face of the reference substrate over the whole periphery of the reference substrate; a step that takes an image of the end face of a substrate over the whole periphery thereof using a camera to obtain shape data of the end face of the substrate over the whole periphery of the substrate; a step that calculates warp amount of the substrate based on the obtained shape data; a step that forms a resist film on a surface of the substrate; a step that determines the supply position from which an organic solvent is to be supplied to a peripheral portion of the resist film and dissolves the peripheral portion by the solvent supplied from the supply position to remove the same from the substrate.

A substrate processing method includes forming a liquid film of an alkaline processing liquid on a substrate by supplying the alkaline processing liquid having a reduced oxygen concentration onto the substrate; and etching the substrate by rotating the substrate while supplying the alkaline processing liquid in a state that the liquid film having a given thickness is formed on the substrate.

A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.

There is provided a substrate processing apparatus which includes: an exhaust pipe configured to selectively discharge an exhaust gas generated by a substrate process to a first pipe or a second pipe; a liquid supply part configured to supply a cleaning liquid to the exhaust pipe; a discharge destination setting part configured to set a discharge destination of the exhaust gas to the first pipe or the second pipe by rotating the exhaust pipe; and a controller configured to control the discharge destination setting part to rotate the exhaust pipe. The controller is further configured to control the liquid supply part to supply the cleaning liquid to the rotating exhaust pipe.

A substrate support for a substrate processing system configured to perform a deposition process on a substrate includes a pedestal having an upper surface configured to support a substrate and N heating layers vertically-stacked within the pedestal below the upper surface. Each of the N heating layers includes a respective resistive heating element. A watt density of the resistive heating element in at least one of the N heating layers varies in at least one radial zone of the substrate support relative to other radial zones of the substrate support.

A heat treatment apparatus of heating a substrate mounted on a mounting plate heated by a heating part includes: plural types of physical quantity detecting parts for detecting plural types of physical quantities, respectively; a state estimating part for estimating an occurrence probability occurring for each of abnormality modes by a neural network, and including an input layer to which a group of time-series detection values obtained for each of physical quantity detection values detected respectively by the physical quantity detecting parts is inputted; and a selecting part for selecting one of correspondence processes based on the occurrence probability of each of the abnormality modes estimated by the state estimating part. One of the physical quantity detection values is a temperature detection value detected by a temperature physical quantity detecting part for detecting a temperature of the mounting plate among the physical quantity detecting parts.

Systems and methods of manipulating and transforming data and sharing ideas include a map comprised of one or more diocards. Each diocard represents an individual idea and has the same group of functions including a distinctions function, a systems function, a relationships function, and a perspectives function. The distinctions function enables definition of the individual idea by attributes the individual idea is comprised of and by non-attributes the individual idea is not comprised of. The systems function enables definition of the individual idea as part of a whole or a whole that can be broken into parts. The relationships function enables definition of the individual idea as having a relationship with one or more different ideas and that this relationship may include action and reaction-like properties. The perspectives function enables definition of the individual idea as a point having a view with respect to one or more different ideas.