A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.

A method includes forming a first protruding fin and a second protruding fin over a base structure, with a trench located between the first protruding fin and the second protruding fin, depositing a trench-filling material extending into the trench, and performing a laser reflow process on the trench-filling material. In the reflow process, the trench-filling material has a temperature higher than a first melting point of the trench-filling material, and lower than a second melting point of the first protruding fin and the second protruding fin. After the laser reflow process, the trench-filling material is solidified. The method further includes patterning the trench-filling material, with a remaining portion of the trench-filling material forming a part of a gate stack, and forming a source/drain region on a side of the gate stack.

An exposure apparatus that exposes a substrate to light by using an original in which a pattern is formed includes an illumination optical system arranged to guide illumination light to the original, the illumination light including first illumination light with a first wavelength and second illumination light with a second wavelength different from the first wavelength, and a projection optical system arranged to form a pattern image of the original by using the illumination light at a plurality of positions in an optical axis direction. The illumination optical system is configured to adjust a position deviation in a direction perpendicular to the optical axis direction between a pattern image formed by the first illumination light and a pattern image formed by the second illumination light by changing an incident angle of the illumination light entering the original.

A semiconductor structure includes a semiconductor fin protruding from a substrate, an S/D feature disposed over the semiconductor fin, and a first dielectric fin and a second dielectric fin disposed over the substrate, where the semiconductor fin is disposed between the first dielectric fin and the second dielectric fin, where a first air gap is enclosed by a first sidewall of the epitaxial S/D feature and the first dielectric fin, and where a second air gap is enclosed by a second sidewall of the epitaxial S/D feature and the second dielectric fin.

A semiconductor structure includes a semiconductor fin protruding from a substrate, an S/D feature disposed over the semiconductor fin, and a first dielectric fin and a second dielectric fin disposed over the substrate, where the semiconductor fin is disposed between the first dielectric fin and the second dielectric fin, where a first air gap is enclosed by a first sidewall of the epitaxial S/D feature and the first dielectric fin, and where a second air gap is enclosed by a second sidewall of the epitaxial S/D feature and the second dielectric fin.

Disclosed are approaches for forming semiconductor device cavities using directional dielectric deposition. One method may include providing a plurality of semiconductor structures and a plurality of trenches of a semiconductor device, and forming a dielectric atop the plurality of semiconductor structures by delivering a dielectric material at a non-zero angle of inclination relative to a normal extending perpendicular from a top surface of the plurality of semiconductor structures. The dielectric may be further formed by delivering the dielectric material at a second non-zero angle of inclination relative to the normal extending perpendicular from the top surface of the plurality of semiconductor structures.

Disclosed are approaches for forming semiconductor device cavities using directional dielectric deposition. One method may include providing a plurality of semiconductor structures and a plurality of trenches of a semiconductor device, and forming a dielectric atop the plurality of semiconductor structures by delivering a dielectric material at a non-zero angle of inclination relative to a normal extending perpendicular from a top surface of the plurality of semiconductor structures. The dielectric may be further formed by delivering the dielectric material at a second non-zero angle of inclination relative to the normal extending perpendicular from the top surface of the plurality of semiconductor structures.

A method of forming a semiconductor structure includes forming a first middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor structure. The first MOL oxide layer including multiple gate stacks formed on a substrate, and each gate stack of the gate stacks including a source/drain junction. A first nitride layer is formed over a silicide in the first MOL oxide layer. A second nitride layer is formed. Trenches are formed through the second nitride layer down to the source/drain junctions. A nitride cap of the plurality of gate stacks is selectively recessed. At least one self-aligned contact area (CA) element is formed within the first nitride layer. The first MOL oxide layer is selectively recessed. An air-gap oxide layer is deposited. The air gap oxide layer is reduced to the at least one self-aligned CA element and the first nitride layer.

A method of forming a semiconductor structure includes forming a first middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor structure. The first MOL oxide layer including multiple gate stacks formed on a substrate, and each gate stack of the gate stacks including a source/drain junction. A first nitride layer is formed over a silicide in the first MOL oxide layer. A second nitride layer is formed. Trenches are formed through the second nitride layer down to the source/drain junctions. A nitride cap of the plurality of gate stacks is selectively recessed. At least one self-aligned contact area (CA) element is formed within the first nitride layer. The first MOL oxide layer is selectively recessed. An air-gap oxide layer is deposited. The air gap oxide layer is reduced to the at least one self-aligned CA element and the first nitride layer.

A semiconductor device includes a source/drain (S/D) region, a fin structure formed on the S/D region, and a gate structure formed on the fin structure so that a space is formed between the S/D region and the gate structure.