The present application provides an SGT MOSFET device, a gate structure of which is a left-right structure, wherein a second field plate conductive material layer with a depth greater than that of a gate conductive material layer is formed between a source conductive material layer and the gate conductive material layer. When the device is reversely biased, depletion capability with respect to the drift region at a side close to a channel region is enhanced due to the feature that a spacing between the second field plate conductive material layer and the drift region is less than a spacing between the source conductive material layer and the drift region. The present application further provides a method for manufacturing an SGT MOSFET device.

A semiconductor device includes substrate, a first gate structure, a second gate structure, and an epitaxy layer. The first gate structure and the second gate structure are over the substrate, in which the first gate structure and the second gate structure each comprises a shielding electrode, a gate electrode over the shielding electrode, and a first gate dielectric layer vertically separating the shielding electrode from the gate electrode. The epitaxy layer is over the substrate and cups an underside of the first gate structure and the second gate structure, in which the epitaxy layer comprises a doped region laterally between the first gate dielectric layer of the first gate structure and the first gate dielectric layer of the second gate structure, a dopant concentration of the doped region being non-uniform along a lateral direction.

A semiconductor device includes substrate, a first gate structure, a second gate structure, and an epitaxy layer. The first gate structure and the second gate structure are over the substrate, in which the first gate structure and the second gate structure each comprises a shielding electrode, a gate electrode over the shielding electrode, and a first gate dielectric layer vertically separating the shielding electrode from the gate electrode. The epitaxy layer is over the substrate and cups an underside of the first gate structure and the second gate structure, in which the epitaxy layer comprises a doped region laterally between the first gate dielectric layer of the first gate structure and the first gate dielectric layer of the second gate structure, a dopant concentration of the doped region being non-uniform along a lateral direction.

A resistive field plate is arranged in a spiral shape in plan view so as to gradually approach an inner main electrode from an outer main electrode. The plurality of floating layers are arranged radially toward the low potential region around the high potential region in plan view. The resistive field plate is provided on the plurality of floating layers via an interlayer insulating film, and thus has a floating step reflecting a film thickness of each of the plurality of floating layers. That is, the resistive field plate is provided in such a manner that the floating step is repeatedly generated along the lapping direction.

In one embodiment, a semiconductor device is formed having a plurality of active trenches formed within an active region of the semiconductor device. A first insulator is formed along at least a portion of sidewalls of each active trench. A perimeter termination trench is formed that surrounds the active region. The perimeter termination trench is formed having a first sidewall that is adjacent the active region and a second sidewall that is opposite the first sidewall. An insulator is formed along the second sidewall that has a thickness is greater than an insulator that is formed along the first sidewall.

In one embodiment, a semiconductor device is formed having a plurality of active trenches formed within an active region of the semiconductor device. A first insulator is formed along at least a portion of sidewalls of each active trench. A perimeter termination trench is formed that surrounds the active region. The perimeter termination trench is formed having a first sidewall that is adjacent the active region and a second sidewall that is opposite the first sidewall. An insulator is formed along the second sidewall that has a thickness is greater than an insulator that is formed along the first sidewall.

Embodiments of this application disclose a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate and having a first bandgap, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a second bandgap. The second bandgap is larger than the first bandgap. The semiconductor device further includes a gate contact disposed over the second nitride semiconductor layer and a first field plate disposed over the gate contact. The first field plate has a first surface facing the substrate, a second surface facing the substrate, and a protruded portion. The protruded portion has a bottom surface facing the substrate. The bottom surface is located between the first surface and the second surface.

Embodiments of this application disclose a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer disposed on the substrate and having a first bandgap, and a second nitride semiconductor layer disposed on the first nitride semiconductor layer and having a second bandgap. The second bandgap is larger than the first bandgap. The semiconductor device further includes a gate contact disposed over the second nitride semiconductor layer and a first field plate disposed over the gate contact. The first field plate has a first surface facing the substrate, a second surface facing the substrate, and a protruded portion. The protruded portion has a bottom surface facing the substrate. The bottom surface is located between the first surface and the second surface.

A semiconductor device includes substrate, a first gate structure, a second gate structure, and an epitaxy layer. The first gate structure and the second gate structure are over the substrate, in which the first gate structure and the second gate structure each comprises a shielding electrode, a gate electrode over the shielding electrode, and a first gate dielectric layer vertically separating the shielding electrode from the gate electrode. The epitaxy layer is over the substrate and cups an underside of the first gate structure and the second gate structure, in which the epitaxy layer comprises a doped region laterally between the first gate dielectric layer of the first gate structure and the first gate dielectric layer of the second gate structure, a dopant concentration of the doped region being non-uniform along a lateral direction.

A semiconductor device includes substrate, a first gate structure, a second gate structure, and an epitaxy layer. The first gate structure and the second gate structure are over the substrate, in which the first gate structure and the second gate structure each comprises a shielding electrode, a gate electrode over the shielding electrode, and a first gate dielectric layer vertically separating the shielding electrode from the gate electrode. The epitaxy layer is over the substrate and cups an underside of the first gate structure and the second gate structure, in which the epitaxy layer comprises a doped region laterally between the first gate dielectric layer of the first gate structure and the first gate dielectric layer of the second gate structure, a dopant concentration of the doped region being non-uniform along a lateral direction.