A multilayer structure includes a substrate and a plurality of sub-stacks extending along a first direction respectively and disposed on an upper surface of the substrate along a second direction. Each of the sub-stacks includes insulating layers and patterned sacrificial layers alternately stacked on the upper surface along a third direction; conductive layers alternately stacked on the upper surface with the insulating layers along the third direction; and interlayer connectors extending along the third direction; wherein the patterned sacrificial layers have first sides and second sides opposite to the first sides, the conductive layers include first side conductive layers corresponding to the first sides and second side conductive layers corresponding to the second sides; wherein the interlayer connectors are electrically connected and directly contact corresponding ones of the conductive layers, and the first direction, the second direction, and the third direction are crossed.

A back end of line interconnect structure and methods for forming the interconnect structure including a fully aligned via design generally includes wide lines formed of copper and narrow lines formed of an alternative metal. The fully aligned vias are fabricated using a metal recess approach and the hybrid metal conductors can be fabricated using a selective deposition approach.

A semiconductor device includes a capacitor. The capacitor includes a first electrode and a second electrode disposed in a first metal layer. The first electrode has a first end and a second end, and the first electrode has a spiral pattern extending outwards from the first end to the second end. The first electrode and the second electrode have a substantially equal spacing therebetween.

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a semiconductor substrate having a first pair of sidewalls extending in a first direction and a second pair of sidewalls. One or more of the second pair of sidewalls extend past the first pair of sidewalls in a second direction that intersects the first direction as viewed from a top-view of the semiconductor substrate. The first pair of sidewalls and the second pair of sidewalls define one or more trenches within the semiconductor substrate. An interconnecting structure including a conductive material is disposed within the one or more trenches in the semiconductor substrate. The interconnecting structure continuously extends completely through the semiconductor substrate.

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a method for forming a 3D memory device includes forming a first source contact portion in a substrate, forming a dielectric stack over the first source contact portion, and forming a slit opening extending in the dielectric stack and exposing the first source contact portion. The method also includes forming a plurality of conductor layers through the slit opening and form a second source contact portion in the slit opening and in contact with the first source contact portion.

Semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device includes an integrated circuit die mounting region and a molding material disposed around the integrated circuit die mounting region. An interconnect structure is disposed over the molding material and the integrated circuit die mounting region. A protection pattern is disposed in a perimeter region of the package. The protection pattern includes a conductive feature.

Semiconductor devices including bamboo tall via interconnect structures and methods of forming the bamboo tall via interconnect structures generally include a first via in a first dielectric layer including a liner layer and a bulk conductor in the first via, wherein the bulk conductor includes a recess filled with a conductive metal different from the bulk conductor and selected to prevent diffusion of the bulk conductor. At least one additional via is in a second dielectric layer including a liner layer and a bulk conductor in the least one additional via, wherein the second dielectric layer is on the first dielectric layer, and wherein the bulk conductor includes a recess filled with a conductive metal different from the bulk conductor and selected to prevent diffusion of the bulk conductor. The at least one additional via is aligned with the first via.

A method of manufacturing a semiconductor device in a semiconductor body having a first surface and a second surface is proposed. Semiconductor device elements are formed in the semiconductor body by processing the semiconductor body at the first surface. A wiring area is formed over the first surface of the semiconductor body. The semiconductor body is attached to a carrier via the wiring area. Thereafter, ions are implanted through the second surface into the semiconductor body. The ions are ions of a doping element, or ions, which induce doping by complex formation, or ions of a heavy metal. A surface region of the semiconductor body at the second surface is irradiated with a plurality of laser pulses. Thereafter, the carrier is removed from the semiconductor body.

A device is disclosed that includes a fin structure disposed below a first metal layer, extending along a column direction, and corresponding to at least one transistor of a memory bit cell, a word line disposed in the first metal layer and extending along a row direction, a first metal island disposed in the first metal layer separated from the word line, and a first connection metal line disposed in a second metal layer above the first metal layer, extending along the column direction, and configured to couple a power supply through the first metal island to the fin structure. In a layout view, the first connection metal line is separated from the fin structure, and the fin structure crosses over the word line and the first metal island. A method is also disclosed herein.

Disclosed herein are methods to fabricate inorganic dies with organic interconnect layers and related structures and devices. In some embodiments, an integrated circuit (IC) structure may be formed to include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric. An example method includes forming organic interconnect layers over an inorganic interconnect substrate and forming passive components in the organic interconnect layer. The organic interconnect layers comprise a plurality of conductive metal layers through an organic dielectric material. The plurality of conductive metal layers comprises electrical pathways. the passive components are electrically coupled to the electrical pathways.