Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.

Amorphous multi-component metallic films can be used to improve the performance of electronic devices such as resistors, diodes, and thin film transistors. An amorphous hot electron transistor (HET) having co-planar emitter and base electrodes provides electrical properties and performance advantages over existing vertical HET structures. Emitter and the base terminals of the transistor are both formed in an upper crystalline metal layer of an amorphous nonlinear resistor. The emitter and the base are adjacent to one another and spaced apart by a gap. The presence of the gap results in two-way Fowler-Nordheim tunneling between the crystalline metal layer and the amorphous metal layer, and symmetric I-V performance. Meanwhile, forming the emitter and base terminals in the same layer simplifies the HET fabrication process by reducing the number of patterning steps.

A method of forming a pattern of metallic material on a substrate includes providing a plurality of void regions on a surface of the substrate. At a first temperature, a first layer of a first metallic material of a eutectic-forming pair of metallic materials is deposited on the substrate to form a conformal metallic film over the substrate and over the surfaces of the plurality of void regions. The substrate and conformal metallic film are warmed to a second temperature greater than a eutectic-liquid-formation temperature of the eutectic pair of metallic materials. At the second temperature, the second metallic material of the eutectic-forming pair of metallic materials is deposited on the conformal metallic film to initiate a eutectic-liquid-forming reaction, such that the plurality of void regions are filled with a mixture of the first and second metallic materials of the eutectic-forming pair of metallic materials.

In an embodiment, a method includes: dispensing a first dielectric layer around and on a first metallization pattern, the first dielectric layer including a photoinsensitive molding compound; planarizing the first dielectric layer such that surfaces of the first dielectric layer and the first metallization pattern are planar; forming a second metallization pattern on the first dielectric layer and the first metallization pattern; dispensing a second dielectric layer around the second metallization pattern and on the first dielectric layer, the second dielectric layer including a photosensitive molding compound; patterning the second dielectric layer with openings exposing portions of the second metallization pattern; and forming a third metallization pattern on the second dielectric layer and in the openings extending through the second dielectric layer, the third metallization pattern coupled to the portions of the second metallization pattern exposed by the openings.

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a first semiconductor structure, and a first connecting structure including a first connecting insulating layer positioned on the first semiconductor structure, a plurality of first connecting contacts positioned in the first connecting insulating layer, and a plurality of first supporting contacts positioned in the first connecting insulating layer. A top surface of the first connecting insulating layer, top surfaces of the plurality of first connecting contacts, and top surfaces of the plurality of first supporting contacts are substantially coplanar. Bottom surfaces of the plurality of first connecting contacts contact a top surface of the first semiconductor structure.

Disclosed herein are methods to fabricate inorganic dies with organic interconnect layers and related structures and devices. In some embodiments, an integrated circuit (IC) structure may be formed to include an inorganic die and one or more organic interconnect layers on the inorganic die, wherein the organic interconnect layers include an organic dielectric. An example method includes forming organic interconnect layers over an inorganic interconnect substrate and forming passive components in the organic interconnect layer. The organic interconnect layers comprise a plurality of conductive metal layers through an organic dielectric material. The plurality of conductive metal layers comprises electrical pathways. the passive components are electrically coupled to the electrical pathways.

A semiconductor storage device according to an embodiment includes: an array chip having a memory cell array; a circuit chip having a circuit electrically connected to a memory cell; and a metal pad bonding the array chip and the circuit chip together. The metal pad includes an impurity. A concentration of the impurity is lowered as separating in a depth direction apart from a surface in a thickness direction of the metal pad.

In general, according to one embodiment, a stress analysis method comprising: dividing a surface of an object into a plurality of first rectangles each having a first size, on data; and acquiring a first type value for each of the first rectangles. The method further includes: specifying, from among the first rectangles, a plurality of second rectangles that have the first type value of a magnitude that falls within a first range and form a rectangle; and generating a stress model for a set of the second rectangles by using the second rectangles as an element.

A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.

A semiconductor device has a substrate and a first conductive layer formed over the substrate. A second conductive layer is formed over the first conductive layer. The first conductive layer can be copper, and the second conductive layer can be nickel. A thickness of the second conductive layer is greater than a thickness of the first conductive layer. A flux material is deposited over the second conductive layer by a printing process. An electrical component is disposed over the flux material, and the flux material is reflowed to make electrical connection between the electrical component and second conductive layer. The flux material substantially vaporizes during the reflow to reduce the occurrence of short circuits. The electrical components can be placed over the substrate with narrow spacing and higher density given the use of the flux material to make electrical connection. An encapsulant is deposited over the electrical component.