A semiconductor package structure includes a plurality of first dies spaced from each other, a molding layer between the first dies, a second die over the plurality of first dies and the molding layer, and an adhesive layer between the plurality of first dies and the second die, and between the molding layer and the second die. A first interface between the adhesive layer and the molding layer and a second interface between the adhesive layer and the plurality of first dies are at different levels.

A curable hot-melt silicone composition that is less susceptible to curing inhibition and with excellent storage stability, and a sheet or film containing the same, is provided. The composition comprises: (A) a solid organopolysiloxane resin containing a specific ratio of (A1) an organopolysiloxane resin having a curing reactive functional group that contains a carbon-carbon double bond and containing 20 mol % or more of a Q unit, and (A2) an organopolysiloxane resin not having a curing reactive functional group that contains a carbon-carbon double bond and containing 20 mol % or more of a Q unit; (B) a chain organopolysiloxane having a curing reactive functional group that contains at least two carbon-carbon double bonds; (C) an organohydrogenpolysiloxane resin having a mass loss ratio relative to pre-exposure of 10% or less after exposure to 100° C. for 1 hour under atmospheric pressure; and (D) a hydrosilylation reaction catalyst. The composition generally has hot-melt properties.

An epoxy resin composition for encapsulation of semiconductor devices and a semiconductor device encapsulated using the epoxy resin composition, the epoxy resin composition including an epoxy resin; a curing agent; an inorganic filler; and a curing catalyst, the epoxy resin including an epoxy resin represented by Formula 1: ##STR00001##

A low-voltage varistor includes a cured body of a resin composition for forming the low-voltage varistor. The resin composition includes: (A) at least one selected from carbon nanotubes and carbon aerogels; and (B) at least one selected from epoxy resin and acrylic resin.

Provided are a wafer level package and a manufacturing method thereof. A reconfigured substrate may be formed by disposing a first semiconductor die on a dummy wafer, and forming a molding layer and a mold covering layer. A second semiconductor die may be stacked on the first semiconductor die and a photosensitive dielectric layer may be formed. Conductive vias penetrating the photosensitive dielectric layer may be plated.

A waterproof electronic device includes: an electronic component module having an electronic component including a semiconductor element, a heat dissipating member provided on the electronic component in a thermally conductive manner, and an insulating material that surrounds the electronic component in such a manner that one surface of the heat dissipating member is exposed; and a waterproof film that is formed at least on whole surfaces in regions of the electronic component module that are to be immersed in a coolant.

An electronic device comprising a carrier having a mounting surface, at least one electronic chip mounted on the mounting surface, an encapsulant at least partially encapsulating the carrier and the at least one electronic chip, and a plurality of capsules in the encapsulant, wherein the capsules comprise a core comprising an additive and comprise a shell, in particular a crackable shell, enclosing the core.

In order to carry out the encapsulation of electronic components, the invention proposes to cover the electronic components (7) with a heat-polymerisable material corresponding to a composition comprising a diimide constituent and a diamine constituent, in which the diimide constituent has been predissolved in the diamine constituent, and to heat the assembly obtained under conditions suitable for carrying out the curing of the material by an addition polymerisation reaction between said diimide constituent and the diamine constituent. The invention finds an application in particular in the field of electronic power modules.

6

A semiconductor package including a circuit substrate, an interposer structure, a plurality of dies, and an insulating encapsulant is provided. The interposer structure is disposed on the circuit substrate. The plurality of dies is disposed on the interposer structure, wherein the plurality of dies is electrically connected to the circuit substrate through the interposer structure. The insulating encapsulant is disposed on the circuit substrate, wherein the insulating encapsulant surrounds the plurality of dies and the interposer structure and encapsulates at least the interposer structure, the insulating encapsulant has a groove that surrounds the interposer structure and the plurality of dies, and the interposer structure and the plurality of dies are confined to be located within the groove.

Implementations of a semiconductor package may include a die; a first pad and a second pad, the first pad and the second pad each including a first layer and a second layer where the second layer may be thicker than the first layer. At least a first conductor may be directly coupled to the second layer of the first pad; at least a second conductor may be directly coupled to the second layer of the second pad; and an organic material may cover at least the first side of the die. The at least first conductor and the at least second conductor extend through openings in the organic material where a spacing between the at least first conductor and the at least second conductor may be wider than a spacing between the second layer of the first pad and the second layer of the second pad.