A fan-out semiconductor package includes: a fan-out semiconductor package may include: a first interconnection member having a through-hole; a semiconductor chip disposed in the through-hole of the first interconnection member and having an active surface having connection pads disposed thereon and an inactive surface opposing the active surface; an encapsulant encapsulating at least portions of the first interconnection member and the inactive surface of the semiconductor chip; a second interconnection member disposed on the first interconnection member and the active surface of the semiconductor chip; and a reinforcing layer disposed on the encapsulant. The first interconnection member and the second interconnection member respectively include redistribution layers electrically connected to the connection pads of the semiconductor chip.

A semiconductor package resin composition of the present invention includes an epoxy resin, a curing agent, inorganic particles, nano-particles surface treated with a silane that contains a photopolymerizable functional group, and a photopolymerization initiator.

An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

Spherical crystalline silica particles having a higher productivity, lower production cost, higher coefficient of thermal expansion, higher heat transmission rate, higher fluidity, higher dispersability, higher fill factor, low abrasiveness, and higher purity compared with the past and able to be applied in the semiconductor field and a process of production of the same are provided. Spherical crystalline silica particles containing 400 to 5000 ppm of aluminum and containing 80% or more of crystal phases are provided.

The present invention relates to a tetramethylbiphenol type epoxy resin having a content of a sodium ion of 1 to 12 ppm which is determined by measurement by the atomic absorption spectrometry using a solution wherein a sample is dissolved in N-methylpyrrolidone.

A triazine ring-containing phenol resin obtained by reacting melamine, para-alkylphenol, and formalin is used to provide an epoxy resin composition capable of providing a cured product with excellent flame retardancy, excellent dielectric characteristics such as a low dielectric tangent and a low dielectric constant, and excellent thermal conductivity, a cured product thereof, and a prepreg, a circuit board, a build-up film, a build-up board, a semiconductor sealing material, a semiconductor device, a fiber reinforced composite material, and a formed article using the epoxy resin composition.

An electronic circuit module includes a circuit board, electronic components, an embedding layer, and a conductive film. The circuit board has a first principal surface, a second principal surface and a side surface, and includes a pattern conductor and a via conductor. The conductive film is connected to a conduction path to a ground electrode. The side surface includes a first region, a second region having a longer circumferential length than the first region, and a connection region connecting the first region and the second regions. The conductive film is formed on a region including at least part of each of an outer surface of the embedding layer, the first region, and the connection region. The conductive film formed on at least part of the connection region is connected to an exposed portion in the connection region of the via conductor included in the conduction path to the ground electrode.

The present disclosure relates to a microelectronics package with an inductive element and a magnetically enhanced mold compound component, and a process for making the same. The disclosed microelectronics package includes a module substrate, a thinned flip-chip die with an upper surface that includes a first surface portion and a second surface portion surrounding the first surface portion, the magnetically enhanced mold compound component, and a mold compound component. The thinned flip-chip die is attached to the module substrate and includes a device layer with an inductive element embedded therein. Herein, the inductive element is underlying the first surface portion and not underlying the second surface portion. The magnetically enhanced mold compound component is formed over the first surface portion. The mold compound component is formed over the second surface portion, not over the first surface portion, and surrounding the magnetically enhanced mold compound component.

Disclosed is a die packaging structure comprising a semiconductor die, an encapsulant layer disposed around the semiconductor die, wherein a backside surface of the semiconductor die is exposed, and a conductive layer coupled to the semiconductor die, the conductive layer comprising a plurality of conductive pillar bumps, wherein a bump density of the plurality of conductive pillar bumps is greater than 5%, wherein the encapsulant layer is further disposed between the plurality of conductive bumps, and wherein the encapsulant layer is disposed between the plurality of conductive bumps using a mold underfill (MUF) process. A method of forming the same is also disclosed.

There are provided a compound containing a phenolic hydroxyl group which exhibits excellent heat resistance and excellent flame retardancy in terms of a cured product, a phenolic resin including the same, a curable composition and a cured product thereof, and a semiconductor sealing material. The compound containing a phenolic hydroxyl group has a dinaphthofuran skeleton, in which each of the two naphthylene skeletons has a hydroxyl group on an aromatic nucleus thereof.