A polysiloxane-polyalkylene glycol block copolymer is obtained by reacting a polysiloxane (A) having any functional group selected from a carboxylic anhydride group, a hydroxyl group, an epoxy group, a carboxyl group, and an amino group with a polyalkylene glycol (B) having any functional group selected from a carboxylic anhydride group, a hydroxyl group, a carboxyl group, an amino group, an epoxy group, a thiol group, and an isocyanate group, wherein a content of a structure derived from the polysiloxane (A) is 20% by mass or more and 90% by mass or less with respect to 100% by mass of the polysiloxane-polyalkylene glycol block copolymer.

Reliability of a semiconductor module is improved. In a resin mold step of assembly of a semiconductor module, an IGBT chip, a diode chip, a control chip, a part of each of chip mounting portions are resin molded so that a back surface of each of the chip mounting portions is exposed from a back surface of a sealing body. After the resin molding, an insulating layer is bonded to the back surface of the sealing body so as to cover each back surface (exposed portion) of the chip mounting portions, and then, a TIM layer is bonded to an insulating layer. Here, a region of the TIM layer in a plan view is included in a region of the insulating layer.

Provided are a resin composition superior in moldability, and capable of yielding a cured product exhibiting a low elastic modulus even at a high temperature and no decrease in glass-transition temperature and having a favorable reflow resistance and heat resistance; and a semiconductor device encapsulated by such cured product. The resin composition is a heat-curable resin composition for semiconductor encapsulation, and contains: (A) an epoxy resin being solid at 25° C.; (B) an organopolysiloxane having, in one molecule, at least one cyclic imide group and at least one siloxane bond; (C) an inorganic filler; and (D) an anionic curing accelerator.

The present disclosure provides a chip package structure having a heat sink and a method making the same. The method includes: bonding a chip to a top surface of a package substrate and forming a heat-conducting lead having an arc-shape and placed on the chip in a vertical direction, a first end of the heat-conducting lead is connected with a surface of the chip, and a second end is connected with a solder ball; forming a plastic package material layer that protects the chip and the heat-conducting lead; forming a heat-conducting adhesive layer on the surface of the plastic package material layer, where the heat-conducting adhesive layer is connected with the solder ball on the second end of the heat-conducting lead; and forming a heat dissipation layer on a surface of the heat-conducting adhesive layer. With the present disclosure, the heat dissipation efficiency of the chip is effectively improved.

The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and/or silicone-modified phenolic resin.

A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.

A power module will be provided which can suppress insulation performance deterioration caused by heat cycle to ensure insulation performance, by suppressing generation of bubbles and occurrence of detachments between silicone gel and an insulating substrate at a high or low temperature or at a high working voltage. The power module includes: an insulating substrate 2 on a first face of which a semiconductor element 3 is provided; a base plate 1 joined to a second face of the insulating substrate 2; a case member 6 surrounding the insulating substrate 2 and being in contact with a face of the base plate 1, that is joined to the insulating place 2; sealing resin 8 filling a region surrounded by the base plate 1 and the case member 6 to seal the insulating substrate 2; a pressing plate 9 disposed in close contact with a surface of the sealing resin 8 in a side of the first face of the insulating substrate 2; and a lid member 7 facing an opposite face of the pressing plate 9 with respect to a face thereof in close contact with the sealing resin 8, and being fixed to the case member 6 at a position to prevent the pressing plate 9 from ascending.

This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, amounting layer, switching elements, a moisture-resistant layer and a sealing resin. The substrate has a front surface facing in a thickness direction. The mounting layer is electrically conductive and disposed on the front surface. Each switching element includes an element front surface facing in the same direction in which the front surface faces along the thickness direction, a back surface facing in the opposite direction of the element front surface, and a side surface connected to the element front surface and the back surface. The switching elements are electrically bonded to the mounting layer with their back surfaces facing the front surface. The moisture-resistant layer covers at least one side surface. The sealing resin covers the switching elements and the moisture-resistant layer. The moisture-resistant layer is held in contact with the mounting layer and the side surface so as to be spanned between the mounting layer and the side surface in the thickness direction.

The present invention provides an insulating film forming composition that excels in insulating properties and heat resistance, suppresses the occurrence of warpage, and can form an insulating film with excellent adhesion. The insulating film forming composition of the present invention contains, as a polymerizable compound, a polyorganosilsesquioxane containing siloxane constituent units; wherein the total content of: constituent units represented by formula (I) [R.sup.aSiO.sub.3/2] (I) and constituent units represented by formula (II) [R.sup.aSiO.sub.2/2(OR.sup.b)] (II) is greater than or equal to 55 mol % of the total amount of the siloxane constituent units; and the polyorganosilsesquioxane has a number average molecular weight of from 500 to 10000 and an epoxy equivalent of from 200 to 2000 g/eq.