An ultraviolet curable organopolysiloxane composition which contains: (A) a linear or branched organopolysiloxane which contains, as monovalent substituents bonded to a silicon atom at an end of the molecular chain, at least three groups represented by formula (1) and/or formula (2) in each molecule, while having the main chain composed of repeated diorganosiloxane units

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(in the formulae, a represents a number of 1-3; and the broken line represents a bonding hand); (B) a linear or branched organopolysiloxane which contains at least two groups represented by formula (3) in each molecule, while having the main chain composed of repeated diorganosiloxane units

R.sup.1.sub.bR.sup.2.sub.3-bSi(3)

(in the formula, R.sup.1 represents an alkenyl group; R.sup.2 represents a monovalent hydrocarbon group; and b represents a number of 1-3); and (C) a photoinitiator.

With use of this ultraviolet curable organopolysiloxane composition, the hardness of a cured product obtained therefrom is easily controlled, and good surface curability and good curability in deep portions are achieved even in the presence of oxygen. Consequently, this ultraviolet curable organopolysiloxane composition enables the achievement of a silicone gel (a gel-like cured product) which has been cured at a substantially uniform crosslinking density (with a substantially uniform penetration) without depending on the irradiance of ultraviolet light (the amount of irradiation energy).

A semiconductor package encapsulant is enclosed. In one example, the semiconductor package encapsulant is for at least partially encapsulating a semiconductor component, wherein the semiconductor package encapsulant comprises metal activated inorganic filler particles providing a corrosion protection function.

A curable organopolysiloxane composition that can be used as a sealant or a bonding agent for optical semiconductor elements is disclosed. The composition comprises: (A) an alkenyl-containing organopolysiloxane that comprises constituent (A-1) of an average compositional formula and constituent (A-2) of an average compositional formula; (B) an organopolysiloxane that contains silicon-bonded hydrogen atoms and comprises a constituent (B-1) containing at least 0.5 wt. % of silicon-bonded hydrogen atoms and represented by an average molecular formula, constituent (B-2) containing at least 0.5 wt. % of silicon-bonded hydrogen atoms and represented by an average compositional formula, and, optionally, constituent (B-3) of an average molecular formula; (C) an adhesion promoter; and (D) a hydrosilylation-reaction catalyst. The composition can form a cured body that possesses long-lasting properties of light transmittance and bondability, and relatively high hardness.

A liquid epoxy resin composition for sealing includes an epoxy resin, a curing agent, and a particle having a core-shell structure. In the composition, the particle having a core-shell structure includes a core including a cross-linked polysiloxane and a shell including a polymer in which the content of a structural unit having an epoxy group is 10% by mass or more.

Provided are a resin composition capable of yielding a cured product exhibiting a superior heat resistance over a long period of time, and a superior reflow resistance due to a low water absorption rate even at a high temperature; and a semiconductor device encapsulated by such cured product. The resin composition is a heat-curable resin composition containing: (A) an organopolysiloxane having, in one molecule, at least one cyclic imide group and at least one siloxane bond; (B) an inorganic filler; and (C) a radical polymerization initiator.
The semiconductor device is encapsulated by the cured product of such heat-curable resin composition.

Provided is a power semiconductor module including: a metal base plate; an insulating substrate arranged on the metal base plate and provided with an electrode; a semiconductor element arranged on the insulating substrate; a case arranged on the metal base plate so as to surround the insulating substrate and the semiconductor element; and a potting material filled into a space defined by the metal base plate and the case so as to encapsulate the insulating substrate and the semiconductor element. The potting material includes: a silicone gel; and a conductivity-imparting agent that is added to the gel and contains a silicon atom and an ionic group.

A curable particulate silicone composition is disclosed. The composition comprises: (A) hot-melt silicone fine particles having a specific reactive functional group; (B) an inorganic filler; and (C) a curing agent. The content of component (B) is in the range of from 87 to 95 vol. % of the total composition. The curable particulate silicone composition provides a cured product having an average linear expansion coefficient of not greater than 15 ppm/ C. in a range of from 25 C. to 200 C. The curable particulate silicone composition provides a cured product having a very low average linear expansion coefficient over a wide temperature range when cured and is particularly suitable for overmold molding and the like.

The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and/or silicone-modified phenolic resin.

A semiconductor package includes a semiconductor chip and a polydimethylsiloxane (PDMS) layer that is provided on the semiconductor chip and of which upper surface is exposed to the outside. Since the semiconductor package may include the PDMS layer, heat emitting performance of the semiconductor package in a vacuum state may improve.

A method of cutting a substrate including a device region and a scribe lane region includes selectively forming a passivation layer in the device region of the substrate, selectively forming a self-assembled monolayer on the passivation layer, and performing plasma cutting in the scribe lane region.