A stack package includes a first sub-package, a second sub-package stacked on the first sub-package. The first sub-package is configured to include first and second semiconductor dies, a first flexible bridge die disposed between the first and second semiconductor dies.

A silicone composition that includes: 100 parts by mass of an organopolysiloxane having the viscosity at 25 C. of 0.01 to 100 Pa.Math.s and two or more alkenyl groups bonded to a silicon atom in one molecule; 1 to 500 parts by mass of a silicone resin of a SiO.sub.4/2 unit and a R.sup.1SiO.sub.3/2 unit; 10 to 500 parts by mass of hydrophobic silica particles in the range of 20 nm to 1,000 nm, and the degree of hydrophobization due to a methanol titrimetric method of 60% or larger; an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to a silicon atom in one molecule, in an amount to provide 0.4 to 5.0 mol of the silicon-bonded hydrogen atoms within the component for every 1 mol of a total of the alkenyl groups bonded to all silicon atoms in the composition; and an effective amount of a platinum group metal catalyst.

The present invention provides a curable organosilicon resin composition showing excellent optical transparency, curability, heat resistance and light resistance. The present invention also provides a semiconductor device encapsulated with a cured product of such a composition. According to the invention, the curable organopolysiloxane composition comprises: (A) an organopolysiloxane comprising at least 10 mol %, based on total moles of siloxane units, of a siloxane unit of the following formula (1): ##STR00001##
wherein R.sup.1 is, independently at each occurrence, a monovalent hydrocarbon group having 1 to 10 carbon atoms, and R.sup.2 is a divalent aromatic group having 6 to 50 carbon atoms and optionally comprising a silylene group or a siloxane linkage, and 10 to 90 mol % of R.sup.1SiO.sub.3/2 unit, the organopolysiloxane having a weight average molecular weight (Mw) of from 2,000 to 100,000, as determined by gel permeation chromatography relative to polystyrene standards, and a ratio of the weight average molecular weight (Mw) to the number average molecular weight (Mn) of at least 1.5; and (B) a catalytic amount of a basic catalyst.

Provided are a heat-curable resin composition for semiconductor encapsulation that is capable of yielding a cured product superior in tracking resistance and dielectric property, and has a favorable continuous moldability; and a semiconductor device encapsulated by a cured product of such resin composition. The heat-curable resin composition for semiconductor encapsulation contains: (A) an epoxy resin other than a silicone-modified epoxy resin, being solid at 25 C.; (B) a silicone-modified epoxy resin; (C) a cyclic imide compound having, in one molecule, at least one dimer acid backbone, at least one linear alkylene group having not less than 6 carbon atoms, at least one alkyl group having not less than 6 carbon atoms, and at least two cyclic imide groups; (D) an organic filler; and (E) an anionic curing accelerator.

A power electronics assembly is provided with a self-healing feature. The power electronics assembly may include a semiconductor electronics device and an insulating substrate coupled to the semiconductor electronics device. A base metal structural component may be provided, coupled to the insulating substrate. The assembly may include a frame component cooperating with the base metal structural component and defining an enclosure containing the semiconductor electronics device and the insulating substrate. The assembly further includes a self-healing polymer comprising disulfide bonds. The self-healing polymer is disposed within the enclosure; additional potting material may also be provided as a multi-layered encapsulation. In various aspects, the self-healing polymer may include polydimethylsiloxane based polyurethane (PDMS-PU) modified with disulfide bonds. The frame component may be configured to direct or confine heat to areas of the assembly where ESD may be problematic.

A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.

Disclosed herein are stairstep interposers with integrated conductive shields, and related assemblies and techniques. In some embodiments, an interposer may include: an insulating material having a stairstep structure with a first step surface, a second step surface, and a bottom surface to face a package substrate, wherein a first thickness of the insulating material between the first step surface and the bottom surface is greater than a second thickness of the insulating material between the second step surface and the bottom surface; a conductive signal pathway extending from the first step surface to the bottom surface; and a conductive shield disposed within the insulating material to shield the conductive signal pathway.

The present invention relates to silazane-siloxane random copolymers as well as their production and their uses, particularly in LEDs.

A wiring is disposed above operating regions of plural unit transistors arranged on a substrate in a first direction. An insulating film is disposed on the wiring. A cavity entirely overlapping with the wiring as viewed from above is formed in the insulating film. A metal member electrically connected to the wiring via the cavity is disposed on the insulating film. The centroid of the cavity is displaced from that of the operating region of the corresponding unit transistor in the first direction. When the cavity having a centroid the closest to the operating region of a unit transistor is defined as the closest proximity cavity, the amount of deviation of the centroid of the closest proximity cavity from that of the operating region of the corresponding unit transistor in the first direction becomes greater from the center to the ends of the arrangement direction of the unit transistors.

A curable silicone composition, the composition includes an organopolysiloxane including: an alkenyl-functional dialkylpolysiloxane with an average of at least two alkenyl groups in each molecule, a degree of polymerization between about 25 and about 10,000, at from about 20 mass % to about 50 mass % of the organopolysiloxane; an alkenyl functional organopolysiloxane resin comprising an Si0.sub.4/2 unit, an R.sup.1.sub.2R.sup.2SiO.sub.1/2 unit and an R.sup.1.sub.3SiO.sub.1/2 unit, wherein R.sup.1 is C.sub.1-10 alkyl and R.sup.2 is alkenyl, the alkenyl functional organopolysiloxane resin having the alkenyl group in the range from about 1.0 mass % to about 4.5 mass %, and having an OH content of about 0.2 mass % to about 2.0 mass % and a mass averaged molecular weight of about 2,000 g/mol to about 22,000 g/mol; a crosslinking agent; and a hydrosilylation catalyst in a catalytic quantity.