A semiconductor power module comprises an insulating interposer comprising an insulative layer disposed between a lower metal layer, a first upper metal layer and a second upper metal layer, a semiconductor transistor die disposed on the first upper metal layer, an electrical connector connecting the semiconductor transistor die with the second upper metal layer, a housing enclosing the insulating interposer and the semiconductor transistor die, a first potting material covering at least selective portions of the semiconductor transistor die and the electrical connector; and a second potting material applied onto the first potting material, wherein the first and second potting materials are different from each other.

Provided is a curable organopolysiloxane composition which has a particularly excellent effect of improving initial adhesiveness in small amounts and a thin layer with respect to various base materials, in addition to being able to achieve particularly excellent adhesive durability and high adhesive strength after curing. The curable organopolysiloxane composition comprises: (A) an organopolysiloxane having at least two alkenyl groups per one molecule; (B) a trialcoxysilyl containing siloxane having one silicon atom-bonded hydrogen atom and at least one trialcoxysilyl group per one molecule; (C) a chain or cyclic organopolysiloxane having at least two silicon atom-bonded hydrogen atoms per one molecule; (D) a chain organopolysiloxane having at least three silicon atom-bonded hydrogen atoms per one molecule; (E) a catalyst for a hydrosilylation reaction; (F) a catalyst for a condensation reaction; and (G) an adhesion promoter.

A curable particulate silicone composition is disclosed. The composition comprises: (A) hot-melt silicone fine particles having a specific reactive functional group; (B) an inorganic filler; and (C) a curing agent. The content of component (B) is in the range of from 87 to 95 vol. % of the total composition. The curable particulate silicone composition provides a cured product having an average linear expansion coefficient of not greater than 15 ppm/° C. in a range of from 25° C. to 200° C. The curable particulate silicone composition provides a cured product having a very low average linear expansion coefficient over a wide temperature range when cured and is particularly suitable for overmold molding and the like.

An electronic component, or a precursor thereof, that comprises a curable organopolysiloxane composition or a cured product thereof is disclosed. The curable organopolysiloxane composition is generally curable through a hydrosilylation reaction and can be applied to at least one area by a microdroplet application device. The curable organopolysiloxane composition has a viscosity of no more than 2.0 Pa.Math.s at a strain rate of 1,000 (1/s), and a viscosity at a strain rate of 0.1 (1/s) being a value no less than 50.0 times the viscosity at a strain rate of 1,000 (1/s). In particular, the area of application generally is a substantially circular area that fits within a frame no more than 1000 μm in diameter, a linear area no more than 1000 μm in line width, or a pattern configured from a combination of these areas.

In an embodiment, a method includes forming a conductive feature adjacent to a substrate; treating the conductive feature with a protective material, the protective material comprising an inorganic core with an organic coating around the inorganic core, the treating the conductive feature comprising forming a protective layer over the conductive feature; and forming an encapsulant around the conductive feature and the protective layer. In another embodiment, the method further includes, before forming the encapsulant, rinsing the protective layer with water. In another embodiment, the protective layer is selectively formed over the conductive feature.

An encapsulant sheet suitable for encapsulating a light-emitting element in a self-luminous display, etc. A resin sheet having a polyolefin as a base resin, wherein the resin sheet is created as an encapsulant sheet for a self-luminous display or for a direct backlight, the melt viscosity of the encapsulant sheet, at a shear velocity of 2.43×10 sec-1 and measured at a temperature of 120° C., being 5.0×103 poise to 1.0×105 poise inclusive.

Method of manufacturing a photovoltaic module comprising at least a first layer and a second layer affixed to each other by means of an encapsulant, said method comprising a lamination step wherein the encapsulant material comprises a silane-modified polyolefin having a melting point below 90° C., pigment particles and an additive comprising a cross-linking catalyst; and wherein in said lamination step heat and pressure are applied to the module, said heat being applied at a temperature between 60° C. and 125° C.

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

There is provided a semiconductor device including: a pad portion that is provided above the upper surface of the semiconductor substrate and that is separated from the emitter electrode; a wire wiring portion that is connected to a connection region on an upper surface of the pad portion; a wiring layer that is provided between the semiconductor substrate and the pad portion and that includes a region overlapping the connection region; an interlayer dielectric film that is provided between the wiring layer and the pad portion and that has a through hole below the connection region; a tungsten portion that contains tungsten and that is provided inside the through hole and electrically connects the wiring layer and the pad portion; and a barrier metal layer that contains titanium and that is provided to cover an upper surface of the interlayer dielectric film below the connection region.

Semiconductor devices including one or more interfacing segments patterned within an outer protective layer and associated systems and methods are disclosed herein. The one or more interfacing segments may provide attachment interfaces/surfaces for connection pads. The one or more interfacing segments or a portion thereof may remain uncovered or exposed and provide warpage control for the corresponding semiconductor device.