H01L23/4828

Display device connected by anisotropic conductive film
09899122 · 2018-02-20 · ·

A display device connected by an anisotropic conductive film, wherein the anisotropic conductive film has a first z-axis length variation rate of 10% to 90%, as measured using a thermo-mechanical analyzer and calculated according to Equation 1:
first z-axis length variation rate=[(L.sub.1L.sub.0)/L.sub.0]100(%)(1), wherein, L.sub.0 is a z-axis length of the anisotropic conductive film at a heating start temperature, and L.sub.1 is a maximum z-axis length of the anisotropic conductive film at 130 C. to 170 C. after being heated, as measured using the thermo-mechanical analyzer.

Integrated circuit packaging system with interposer support structure mechanism and method of manufacture thereof

A system and method of manufacture of an integrated circuit packaging system includes: a base substrate, the base substrate includes a base terminal; an integrated circuit device on the base substrate; a bottom conductive joint on the base terminal; a conductive ball on the bottom conductive joint, the conductive ball includes a core body; and an interposer over the conductive ball.

Semiconductor device using composition for anisotropic conductive adhesive film or anisotropic conductive adhesive film

A semiconductor device bonded by an anisotropic conductive adhesive composition, the anisotropic conductive adhesive composition having a solid content ratio between a polymer binder system and a curing system of about 40:60 to about 60:40, and a coefficient of thermal expansion of about 150 ppm/ C. or less at about 100 C. or less.

Conductive features with air spacer and method of forming same

A device includes a first conductive feature in an insulating layer; a dielectric layer over the first conductive feature; a second conductive feature in the dielectric layer, wherein the second conductive feature is over and physically contacting the first conductive feature; an air spacer encircling the second conductive feature, wherein sidewalls of the second conductive feature are exposed to the air spacer; a metal cap covering the second conductive feature and extending over the air spacer, wherein the air spacer is sealed by a bottom surface of the metal cap; a first etch stop layer on the dielectric layer, wherein a sidewall of the first etch stop layer physically contacts a sidewall of the metal cap; and a second etch stop layer extending on a top surface of the metal cap and a top surface of the first etch stop layer.

Package apparatus and manufacturing method thereof

A package apparatus comprises a first conductive wiring layer, a first conductive pillar layer, a first conductive glue layer, an internal component, a second conductive pillar layer, a first molding compound layer and a second conductive wiring layer. The first conductive pillar layer is disposed on the first conductive wiring layer. The first conductive glue layer is disposed on the first conductive wiring layer. The internal component has a first electrode layer and a second electrode layer, wherein the first electrode layer is disposed and electrical connected to the first conductive glue layer. The second conductive pillar layer is disposed on the second electrode layer. Wherein the first conductive wiring layer, the first conductive pillar layer, the first conductive glue layer, the internal component and the second conductive pillar layer are disposed inside the first molding compound layer.