GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

In some examples a semiconductor chip package includes a conductive terminal. In addition, the semiconductor chip package includes a die pad including a top side and a recess extending into the top side. The die pad is downset relative to the conductive terminal. Further, the semiconductor ship package includes a semiconductor die positioned within the recess, wherein the semiconductor die has an outer perimeter, and a solder fillet engaged within the recess and with the outer perimeter of the semiconductor die. Still further, the semiconductor chip package includes a wire bond coupled to the semiconductor die and the conductive terminal, and a mold compound covering the conductive terminal, the wire bond, the die pad, and the semiconductor die.

A multilayer wiring structure in which a plurality of conductive films and a plurality of interlayer dielectric films are laminated is formed so as to cover a main surface of a first semiconductor chip. The conductive films include conductive films to which a low voltage is applied and conductive films to which a high voltage is applied. The conductive films to which the low voltage is applied are located below the conductive films to which the high voltage is applied and closer to the main surface of a semiconductor substrate. The conductive films are arranged as conductive films of at least one layer between a first inductor to which the low voltage is applied and a second inductor to which the high voltage is applied.

A semiconductor device includes a first die extending through a molding compound layer, a first dummy die having a bottom embedded in the molding compound layer, wherein a height of the first die is greater than a height of the first dummy die, and an interconnect structure over the molding compound layer, wherein a first metal feature of the interconnect structure is electrically connected to the first die and a second metal feature of the interconnect structure is over the first dummy die and extends over a sidewall of the first dummy die.

Methods of forming a semiconductor device comprising a lead-frame having a die pad having at least one electrically conductive die pad area and an insulating layer applied onto the electrically conductive die pad area. An electrically conductive layer is applied onto the insulating layer with one or more semiconductor dice coupled, for instance adhesively, to the electrically conductive layer. The electrically conductive die pad area, the electrically conductive layer and the insulating layer sandwiched therebetween form at least one capacitor integrated in the device. The electrically conductive die pad area comprises a sculptured structure with valleys and peaks therein; the electrically conductive layer comprises electrically conductive filling material extending into the valleys in the sculptured structure of the electrically conductive die pad area.

A semiconductor device includes a semiconductor element, a mount portion, and a sintered metal bond. The semiconductor element includes a body and an electrode pad. The body has an obverse surface facing forward in a first direction and a reverse surface facing rearward in the first direction. The electrode pad covers the element reverse surface. The mount portion supports the semiconductor element. The sintered metal bond electrically bonds the electrode pad and the mount portion. The sintered metal bond includes a first rear edge and a first front edge spaced forward in the first direction from the first rear edge. The electrode pad includes a second rear edge and a second front edge spaced forward in the first direction from the second rear edge. The first front edge of the metal bond is spaced rearward in the first direction from the second front edge of the pad.

A method comprises molding laser direct structuring material onto at least one semiconductor die, forming resist material on the laser direct structuring material, producing mutually aligned patterns of electrically-conductive formations in the laser direct structuring material and etched-out portions of the resist material having lateral walls sidewise of said electrically-conductive formations via laser beam energy, and forming electrically-conductive material at said etched-out portions of the resist material, the electrically-conductive material having lateral confinement surfaces at said lateral walls of said etched-out portions of the resist material.

A semiconductor package includes a semiconductor die, an encapsulant body of electrically insulating material that encapsulates the semiconductor die, a thermal conduction plate comprising an outer surface that is exposed from the encapsulant body, a region of thermal interface material interposed between the thermal conduction plate and the semiconductor die, the region of thermal interface material being a liquid or semi-liquid, and a barrier that is configured to prevent the thermal interface material of the region from flowing laterally across the barrier.

A leadframe for flip chip attaching a semiconductor die thereon includes a rectangular area segmented into individual pads, the individual pads including a first pad, a second pad, and a third pad, wherein the first pad is larger than the second pad and larger than the third pad, and the second pad is located in a first corner area of the rectangular area and the third pad is located in a second corner area of the rectangular area, the second corner area being located diagonally opposite to the first corner area.

A method of forming a semiconductor package includes providing a panel, providing one or more metal layers on an upper surface of the panel, forming a die pad and bond pads from the one or more metal layers, the die pad being adjacent to and spaced apart from the bond pads, attaching a die to the die pad, forming electrical connections between the die and the bond pads, encapsulating the die and the electrical connections with an electrically insulating mold compound, removing portions of the panel, and exposing the die pad and the bond pads after encapsulating the die.