A sensor device includes: a first sensor element; a second sensor element; and a processing chip that includes a semiconductor substrate, a first processor that receives a first detection signal and processes the first detection signal, a second processor that receives the second detection signal and processes the second detection signal, and an isolation portion that electrically isolates the first processor the second processor. The first processor includes a first diagnosis unit that self-diagnoses a presence or absence of a failure. The second processor includes a second diagnosis unit that self-diagnoses a presence or absence of a failure. The processing chip identifiably outputs a first output of the first processor and a second output of the second processor.

A method includes forming a leadframe assembly to have a pair of opposing sides, and having semiconductor die receiving portions extending between the opposing sides. The method also includes placing semiconductor dies on the leadframe assembly in the die receiving portions. Each die has a row of leads on each of two opposing sides of the die and a longitudinal axis parallel to the rows of leads. The longitudinal axis of each die is orthogonal to the opposing sides of the leadframe assembly. The method further includes applying mold compound to the semiconductor dies. The method includes punching through the leadframe assembly between the opposing sides using a first tool having a first tool longitudinal axis parallel to longitudinal axes of the dies.

The present disclosure is directed to embodiments of semiconductor device packages including a plurality of conductive vias and traces formed by an laser-direct structuring process, which includes at least a lasering step and a plating step. First ones of the plurality of conductive vias extend into an encapsulant to contact pads of a die encased within the encapsulant, and second ones of the plurality of conductive vias extend in the encapsulant to end portions of leads in the encapsulant. The second ones of the plurality of conductive vias may couple the leads to contact pads of the die. In some embodiments, the leads of the semiconductor device packages may extend outward and away from encapsulant. In some other alternative embodiments, the leads of the semiconductor device packages may extend outward and away from the encapsulant and then bend back toward the encapsulant such that an end of the lead overlaps a surface of the encapsulant at which the plurality of conductive vias are present.

A sensor device includes: a first sensor element; a second sensor element; and a processing chip that includes a semiconductor substrate, a first processor that receives a first detection signal and processes the first detection signal, a second processor that receives the second detection signal and processes the second detection signal, and an isolation portion that electrically isolates the first processor the second processor. The first processor includes a first diagnosis unit that self-diagnoses a presence or absence of a failure. The second processor includes a second diagnosis unit that self-diagnoses a presence or absence of a failure. The processing chip identifiably outputs a first output of the first processor and a second output of the second processor.

A semiconductor device includes: a first semiconductor element; a second semiconductor element; a first insulating base member including a fifth face and a sixth face; a second insulating base member including a seventh face and an eighth face; a first wiring that penetrates through the first insulating base member, and disposed on the sixth face; a second wiring that penetrates through the second insulating base member, and disposed on the eighth face; a first wiring member that faces the second face of the first semiconductor element; and a second wiring member that is provided on the second wiring. The first wiring member is provided on the seventh face of the second insulating base member. A current flows in a first direction in the first wiring member, and flows in a second direction opposite to the first direction in the second wiring member.

Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

A module package in which electronic components are packaged. The package module may comprise a base, at least one component, a housing, and a coaxial lead assembly. The component is over the base. The housing is over the base and encompasses the component. The coaxial lead assembly extends out of the housing and facilitates electrical connections with the component. The at least one coaxial lead assembly comprises a dielectric structure, a central conductor, and an outer conductor formed by a top wall extending between two side walls. The central conductor may be between the two side walls. The dielectric structure may reside between the central conductor and the outer conductor, such that the central conductor and outer conductor are isolated from one another.

A semiconductor package includes a first layer including a semiconductor die embedded within a dielectric substrate, and a first set of metal pillars extending through the dielectric substrate, a second layer stacked on the first layer, the second layer including a metal trace patterned on the dielectric substrate of the first layer, a passive component including at least one capacitor or resistor electrically coupled to the metal trace, and a second set of metal pillars extending from the metal trace to an opposing side of the second layer, and a third layer stacked on the second layer, the third layer including at least one inductor electrically coupled to metal pillars of the second set of metal pillars.

A method of fabricating a semiconductor device is disclosed. In one aspect, the method includes placing a first semiconductor chip on a carrier with the first main surface of the first semiconductor chip facing the carrier. A first layer of soft solder material is provided between the first main surface and the carrier. Heat is applied during placing so that a temperature at the first layer of soft solder material is equal to or higher than a melting temperature of the first layer of soft solder material. A second layer of soft solder material is provided between the first contact area and the second main surface. Heat is applied during placing so that a temperature at the second layer of soft solder material is equal to or higher than a melting temperature of the second layer of soft solder material. The first and second layers of soft solder material are cooled to solidify the soft solder materials.

A semiconductor device package includes a first conductive base, a first insulation layer and a second insulation layer. The first conductive base has a first surface, a second surface opposite to the first surface and a lateral surface extended between the first surface and the second surface. The lateral surface includes a first portion adjacent to the first surface and a second portion adjacent to the second surface. The first insulation layer comprises a first insulation material. The first insulation layer has a first surface and a second surface opposite to the first surface. The first insulation layer covers the first portion of the lateral surface of the first conductive base. The second insulation layer comprises a second insulation material and covers the second portion of the lateral surface of the first conductive base. The first insulation material is different from the second insulation material.