An electronic component is provided that includes multiple conductive terminals and an insulator integrated with the conductive terminals. A leg part possessed by one of the conductive terminals and a leg part possessed by another one of the conductive terminals are disposed so as to vertically overlap each other. The leg part possessed by one of the conductive terminals and the leg part possessed by another one of the conductive terminals have different lengths, and the tip of the shorter leg part of the two is covered by a thick part of the insulator.

A semiconductor device includes a first die including a first pad and a first passivation layer, a second die including a second pad and a second passivation layer, and an encapsulant surrounding the first die and the second die. Surfaces of the first die are not coplanar with corresponding surfaces of the second die. A dielectric layer covers at least portions of the first passivation layer and the second passivation layer, and further covers the encapsulant between the first die and the second die. The encapsulant has a first surface. The dielectric layer has a second surface adjacent to the first passivation layer, the second passivation layer and the encapsulant, and further has a third surface opposite the second surface. The semiconductor device further includes a redistribution layer electrically connected to the first pad and the second pad and disposed above the third surface of the dielectric layer.

A semiconductor device has a resistance element including a metal block, a resin layer disposed on the metal block, and a resistance film disposed on the resin layer and an insulated circuit board including an insulating plate and a circuit pattern disposed on the insulating plate and having a bonding area on a front surface thereof to which a back surface of the metal block of the resistance element is bonded. The area of the circuit pattern is larger in plan view than that of a front surface of the resistance element. The metal block has a thickness greater than that of the circuit pattern in a direction orthogonal to the back surface of the metal block. As a result, the metal block properly conducts heat generated by the resistance film of the resistance element to the circuit pattern.

A semiconductor device contains an electrically conductive carrier and a semiconductor chip arranged on the carrier. Furthermore, the semiconductor device contains a layer stack arranged between the carrier and the semiconductor chip and having a plurality of dielectric layers. The layer stack galvanically isolates the semiconductor chip and the carrier from one another. At least one of the plurality of dielectric layers is coated with an electrically conductive coating.

The invention discloses a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a recess is formed in the device carrier and a conductive element is disposed on the substrate, wherein the substrate is disposed on the device carrier and the conductive element is located in the recess of the device carrier. The conductive pattern in the substrate is electrically connected to the device carrier and I/O terminals of the first conductive element. The invention also discloses a method for manufacturing a package structure made of the combination of a device carrier and a modifiable substrate. In one embodiment, a portion of the conductive pattern in the substrate can be modified.

A package structure for a capacitive coupling isolator is provided. The package structure includes a first and a second leadframes, a transmitter, a receiver and a packaging body. The first leadframe includes a first and a second signal input pins and a first electrode plate, and the second leadframe includes a first and a second signal output pins and a second electrode plate. The first and second electrode plates are arranged one above another and aligned with each other for forming a plurality of capacitors. The transmitter is disposed on the first leadframe and the receiver is disposed on the second leadframe. The packaging body encloses the first and second leadframes and is filled therebetween for electrically isolating the first and second leadframes from each other.

Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple leadframe routing layers in a plated and etched copper terminal semiconductor package by removing unwanted areas of each leadframe to create conductive paths on an associated leadframe layer of the semiconductor package.

In one implementation, a semiconductor package includes an integrated circuit (IC) flip chip mounted on a first patterned conductive carrier, a second patterned conductive carrier situated over the IC, and a magnetic material situated over the second patterned conductive carrier. The semiconductor package also includes a third patterned conductive carrier situated over the magnetic material. The second patterned conductive carrier and the third patterned conductive carrier are electrically coupled so as to form windings of an integrated inductor in the semiconductor package.

Embodiments of the present invention are directed to a method of manufacturing a semiconductor package with an internal routing circuit. The internal routing circuit is formed from multiple molding routing layers in a plated and etched copper terminal semiconductor package by using a laser to blast away un-designed conductive areas to create conductive paths on each molding compound layer of the semiconductor package.

A method of producing leadframes for semiconductor devices comprises: providing a plurality of electrically-conductive plates, forming in the electrically conductive plates homologous passageway patterns according to a desired semiconductor device leadframe pattern, joining together the plurality of plates with the homologous passageway patterns formed therein mutually in register by producing a multilayered leadframe exhibiting the desired leadframe pattern and a thickness which is the sum of the thicknesses of the plates in the plurality of electrically-conductive plates.