To suppress a temperature rise of a chip accompanying a production of large output by a power converter, and to reduce a size of the power converter. A power semiconductor device includes: a first power semiconductor element to configure an upper arm of an inverter circuit; a second power semiconductor element to configure a lower arm of the inverter circuit; a first lead frame to transmit power to the first power semiconductor element; a second lead frame to transmit power to the second power semiconductor element; a first gate lead frame to transmit a control signal to the first power semiconductor element; and a sealing member to seal the first power semiconductor element, the second power semiconductor element, the first lead frame, the second lead frame, and the first gate lead frame. In the power semiconductor device, a through-hole is formed in the sealing member, and a part of the first gate lead frame and a part of the second lead frame are exposed to an inner peripheral surface of the through-hole.

A semiconductor package includes a leadframe having a clip foot portion, the clip foot portion having a first tie bar, a conductive clip situated over the leadframe, the conductive clip including a first lock fork having at least two prongs around the first tie bar so as to secure the conductive clip to the clip foot portion of the leadframe. The conductive clip includes a second lock fork having at least two prongs around a second tie bar of the clip foot portion. The conductive clip is electrically coupled to the clip foot portion of the leadframe. The clip foot portion of the leadframe includes exposed leads. The semiconductor package also includes at least one semiconductor device situated on the leadframe. The at least one semiconductor device is coupled to a driver integrated circuit situated on the leadframe.

The present disclosure relates to semiconductor components. The teachings thereof may be embodied in a lead frame for a semiconductor component including: a frame having a recess; an electrically conductive connecting element for establishing an electrical connection to the semiconductor component arranged in the recess; and an insulating element arranged in the recess and mechanically connecting the connecting element to the frame and electrically insulating it from the frame.

An electronic component has a semiconductor element and a thermally conductive support member. A heat sink is disposed on one surface of the circuit body, and a thermally conductive insulating member is interposed between the heat sink and the support member. Input and output terminals and a ground terminal are also provided. A sealing resin is formed to expose a part of each of the input and output terminals and the ground terminal and one surface of the heat sink, and to cover a periphery of the electronic component structure. A main body conductor layer is formed to be insulated from the input and output terminals and cover an immersion region of the sealing resin and one surface of the heat sink immersed in a cooling medium. A ground conductor layer covers at least a part of the ground terminal and is electrically connected with the main body conductor layer.

[Problem] An object of the present invention is to provide an electronic part mounting heat-dissipating substrate which enables a circuit for which a power semiconductor in which a large current flows is used to reduce the wiring resistances of a large power operation and improve the heat dissipation.

[Means for Solving] The present invention is an electronic part mounting heat-dissipating substrate which comprises lead frames of wiring pattern shapes formed by conductor plate and an insulating member 130 which is provided between the lead frames 110, wherein a plate surface of a part arrangement surface of said conductor plate and a top surface of said insulating member at a side of said part arrangement surface form one continuous surface, the lead frames have different thicknesses, the thick lead frame 110H is used for a large current signal and the thin lead frame 110L is used for a small current signal, a plate surface of a back surface of the part arrangement surface and a top surface of the insulating member at a side of the back surface at the part arrangement surface-side are formed in an identical plane.

An electronic heat-dissipating substrate including: lead frames of wiring pattern shapes on a conductor plate; and an insulating member between the lead frames. A plate surface of the lead frames and a top surface of the insulating member form one continuous surface. The part arrangement surface is on both surfaces of the electronic part mounting heat-dissipating substrate, a reductant circuit which includes at least similar dual-system circuit is formed on the electronic part mounting heat-dissipating substrate, a first-system circuit of the dual-system circuit is formed on a first surface of the electronic part mounting heat-dissipating substrate, a second-system circuit of the dual-system circuit is formed on a second surface of the electronic part mounting heat-dissipating substrate, and the common lead frames used in a portion of a circuit wiring are used to the first surface and the second surface of the electronic part mounting heat-dissipating substrate.

A semiconductor device includes a lead frame; a circuit board located on the lead frame; a power device that includes a switching element and is mounted on the circuit board via a bump located between the power device and the circuit board; and a heat releasing member connected to the power device. The circuit board may be a multi-layer wiring board. The circuit board may include a capacitor element, a resistor element, an inductor element, a diode element and a switching element.

A semiconductor package includes at least one semiconductor device situated on a leadframe island, a first at least one lead protruding from a first side of the semiconductor package and configured to provide a first electrical connection to at least one terminal of the at least one semiconductor device, a second at least one lead protruding from a second side of the semiconductor package and configured to provide a second electrical connection to the at least one terminal of the at least one semiconductor device, and a continuous conductive structure configured to provide a conductive path between the first at least one lead, the second at least one lead, and the at least one terminal of the at least one semiconductor device through the leadframe island such that the at least one semiconductor device continues to function after trimming the first at least one lead.

A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.

A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.