Patent classifications
H01L23/49568
ELECTRONIC SYSTEM HAVING INTERMETALLIC CONNECTION STRUCTURE WITH CENTRAL INTERMETALLIC MESH STRUCTURE AND MESH-FREE EXTERIOR STRUCTURES
An electronic system is disclosed. In one example, the electronic system comprises an at least partially electrically conductive carrier, an electronic component, and an intermetallic connection structure connecting the carrier and the component. The intermetallic connection structure comprising an intermetallic mesh structure in a central portion of the intermetallic connection structure, and opposing exterior structures without intermetallic mesh and each arranged between the intermetallic mesh structure and the carrier or the component.
SEMICONDUCTOR DEVICE
A semiconductor device includes an insulating layer having a first surface and a second surface opposite to the first surface. The semiconductor device includes at least one semiconductor element located on a side of the first surface. The semiconductor device includes a first metal sinter and a second metal sinter. The first metal sinter is in contact with the first surface of the insulating layer and the semiconductor element, and bonds the insulating layer and the semiconductor element. The second metal sinter is in contact with the second surface of the insulating layer.
STACKED MODULE ARRANGEMENT
A stacked module arrangement includes: a first molded electronic module; a second molded electronic module; and an interface by which the first molded electronic module and the second molded electronic module are physically and electrically connected to one another in a stacked configuration. The first molded electronic module is a power electronic module having a maximum breakdown voltage of at least 40 V and a maximum DC current of at least 10 A.
Packaged stackable electronic power device for surface mounting and circuit arrangement
A power device for surface mounting has a leadframe including a die-attach support and at least one first lead and one second lead. A die, of semiconductor material, is bonded to the die-attach support, and a package, of insulating material and parallelepipedal shape, surrounds the die and at least in part the die-attach support and has a package height. The first and second leads have outer portions extending outside the package, from two opposite lateral surfaces of the package. The outer portions of the leads have lead heights greater than the package height, extend throughout the height of the package, and have respective portions projecting from the first base.
SEMICONDUCTOR DEVICE
In a semiconductor device, a first wiring member is electrically connected to a first main electrode on a first surface of a semiconductor element, and a second wiring member is electrically connected to a second main electrode on a second surface of the semiconductor element. An encapsulating body encapsulates at least a part of each of the first and second wiring members, the semiconductor element and a bonding wire. The semiconductor element has a protective film on the first surface of the semiconductor substrate, and the pad has an exposed surface exposed from an opening of the protective film. The exposed surface includes a connection area to which the bonding wire is connected, and a peripheral area on a periphery of the connection area. The peripheral area has a surface that defines an angle of 90 degrees or less relative to a surface of the connection area.
SEMICONDUCTOR PACKAGE WITH TOPSIDE COOLING
A semiconductor package includes a leadframe including leads and a die attach pad (DAP) inside the leads, and at least one semiconductor die having a top side including circuitry electrically connected to bond pads and a bottom side attached to a bottom side portion of the DAP. The package includes a mold compound and a heat slug having a top side and a bottom side positioned within a cavity defined by sidewalls of the mold compound. The heat slug has an area greater than an area of the DAP is attached by its bottom side with a thermally conductive adhesive material to a top side portion of the DAP. Bondwires are between the leads and the bond pads. Exposed from the mold compound is a bottom side surfaces of the leads and the top side of the heat slug.
SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device package and a method for manufacturing the same is provided. The semiconductor device package includes a semiconductor die having an electronic component integrated thereon and having a die terminal that is electrically connected to the electronic component, a stress relief substrate fixedly and electrically connected to the die terminal, and a clip lead. The substrate is configured to provide an electrical short between the clip lead and the die terminal. The stress relief substrate may form an interface between the clip lead and the semiconductor die and can thereby reduce stress exerted on the semiconductor die by the clip lead.
CURRENT SENSE CIRCUIT HAVING A TEMPERATURE COMPENSATED RESPONSE
A package for a current sense circuit may include a lead-frame having a shunt resistance configured to generate a shunt voltage, which can be used to measure a current through the lead-frame. The shunt resistance associated with the lead-frame may be highly variable with temperature, which can cause errors in the current measurement. Accordingly, a current sense circuit can include an amplifier with an input resistor having a composite temperature coefficient configured to match a lead-frame temperature coefficient so that an output of the amplifier is compensated to remove variations in the shunt resistance of the lead-frame due to temperature.
POWER MODULE AND MANUFACTURING METHOD THEREOF, CONVERTER, AND ELECTRONIC DEVICE
A power module (10) and a manufacturing method thereof are disclosed. The power module (10) includes a power assembly (11) and a drive board (12). The power assembly (11) includes a substrate (111), a power chip (112), and a package body (113). The power chip (112) is disposed on a mounting surface (1110) of the substrate (111). The package body (113) packages the power chip (112) on the substrate (111). The drive board (12) is disposed in the package body (113) and is located on a side, of the power chip (112), that backs the mounting surface (1110). The drive board (12) is electrically connected to the power chip (112). In the power module, a parasitic parameter between the drive board (12) and the power assembly (11) can be reduced, thereby improving electrical performance of the power module (10).
Integrated circuit package electronic device
A surface mount electronic device providing an electrical connection between an integrated circuit (IC) and a printed circuit board (PCB) is provided and includes a die and a dielectric material formed to cover portions of the die. Pillar contacts are electrically coupled to electronic components in the die and the pillar contacts extend from the die beyond an outer surface of the die. A conductive ink is printed on portions of a contact surface of the electronic device package and forms electrical terminations on portions of the dielectric material and electrical connector elements that connect an exposed end surface of the pillar contacts to the electrical terminations.