In some examples, an electronic device comprises a first magnetic member, a first adhesive layer abutting the first magnetic member, a second magnetic member, a second adhesive layer abutting the second magnetic member, and a laminate member between the first and second adhesive layers. The laminate member comprises first and second transformer coils, an electromagnetic interference (EMI) shield coil, and a set of thermally conductive members coupled to the EMI shield coil and extending in three dimensions. At least some of the thermally conductive members extend vertically through a thickness of the laminate member so as to be exposed to top and bottom surfaces of the laminate member. The electronic device includes a thermally conductive component coupled to at least one thermally conductive member in the set of thermally conductive members.

Disclosed is a power module capable of maximizing heat dissipation performance through application of a thick lead frame and a ceramic coating layer to upper and lower sides of a semiconductor device.

Semiconductor device A1 of the disclosure includes: semiconductor element 11 having element obverse surface 11a and element reverse surface 11b spaced apart from each other in z direction (first direction) with first region 111 formed on the element obverse surface 11a; metal plate 31 (electrode member) disposed on the element obverse surface 11a and electrically connected to the first region 111; electrically conductive substrate 22A (first conductive member) disposed to face the element reverse surface 11b and bonded to the semiconductor element 11; electrically conductive substrate 22B (second conductive member) spaced apart from the conductive substrate 22A (first conductive member); and lead member 5 (connecting member) electrically connecting the metal plate 31 (electrode member) and the conductive substrate 22B (second conductive member). The lead member 5 (connecting member) is bonded to the metal plate 31 (electrode member) by laser welding. The semiconductor device of this configuration provides improved reliability.

An electric component includes: a semiconductor component including a heat radiating portion, a semiconductor element, a lead terminal, and a coating resin coating a part of each of the above; a wiring board including a first mounting portion, a second mounting portion, and an insulating substrate; a first solder connecting the first mounting portion and the heat radiating portion; and a second solder connecting the second mounting portion and the lead terminal. The first solder includes (a) a solder connecting portion connecting the heat radiating portion and the first mounting portion and (b) a flux provided around the solder connecting portion, and a third space which is provided as a space after excluding a second space that is an overlap of the heat radiating portion and the first mounting portion from a first space.

A semiconductor apparatus that ensures heat dissipation using a heat dissipating member with multiple fins formed by folding a metal plate, a manufacturing method for the semiconductor apparatus, and a power converter are obtained. The semiconductor device is bonded to a lead frame. The lead frame is provided on an insulating layer and a metal base plate is provided on the face opposite to the face of the insulating layer on which the semiconductor device is bonded. The semiconductor device, the lead frame, the insulating layer, and the metal base plate are sealed with a sealing member in such a way that a portion of the lead frame and a portion of the metal base plate are exposed. The exposed portion of the metal base plate exposed from the sealing member is inserted in an opening of a support frame. A heat dissipating member is bonded to both the metal base plate and the support frame.

A semiconductor package includes: a semiconductor chip having an active surface, on which a connection pad is disposed, and an inactive surface opposite to the active surface; a heat-dissipating member disposed on the inactive surface of the semiconductor chip and including graphite; an encapsulant sealing at least a portion of each of the semiconductor chip and the heat-dissipating member; a capping metal layer disposed directly between the heat-dissipating member and the encapsulant; and a connection structure disposed on the active surface of the semiconductor chip and including a redistribution layer electrically connected to the connection pad, wherein the heat-dissipating member includes holes passing through at least a portion of the heat-dissipating member, and the holes overlap the inactive surface of the semiconductor chip.

In a described example, an apparatus includes a packaged device carrier having a board side surface and an opposing surface, the packaged device carrier having conductive leads having a first thickness spaced from one another; the conductive leads having a head portion attached to a dielectric portion, a middle portion extending from the head portion and extending away from the board side surface of the packaged device carrier at an angle to the opposing surface, and each lead having an end extending from the middle portion with a foot portion configured for mounting to a substrate.

An object is to suppress a lift of an external terminal when an external force is applied, thereby improving the reliability of a semiconductor device. A heat radiating plate 10 having on one main surface a circuit area 54 in which a semiconductor element 50 is arranged, a pair of terminals 31 and 32 connected to the semiconductor element 50, a resin housing 20 that covers the circuit area 54 of the heat radiating plate 10 to seal the semiconductor element 50, and has a terminal surface 22 formed on an upper surface, a pair of side surfaces in the longitudinal direction, and a pair of front and rear surfaces in the lateral direction, are included. The resin housing 20 has a pair of bending contact portions 22e and 23e that come into respectively contact with the pair of terminals 31 and 32 to define bending positions of the terminals 31 and 32. The pair of bending contact portions 22e and 23e are formed to have different heights. The pair of terminals 31 and 32 protrude from the resin housing 20 at positions sandwiching the nut accommodating opening 21, and are bent so as to overlap each other on the nut accommodating opening 21.

A chip packaging method includes: providing a wafer, on which multiple bumps are formed; cutting the wafer into multiple chip units, wherein multiple vertical heat conduction elements are formed on the wafer or the chip units; disposing the chip units on a base material; and providing a package material to encapsulate lateral sides and a bottom surface of each of the chip units, to form a chip package unit, wherein the bottom surface of the chip unit faces the base material; wherein, in the chip package unit, the bumps on the chip units abut against the base material, and wherein the vertical heat conduction elements directly connect to the base material, or the base material includes multiple through-holes and the vertical heat conduction elements pass through the multiple through-holes in the base material.

The present invention provides a chip packaging method, which includes: providing a base material, which includes plural finger contacts; disposing plural chips on the base material by flip chip mounting technology, and disposing plural vertical heat conducting elements surrounding each of the chips to connect the finger contacts on the base material; providing a packaging material to encapsulate the base material, the chips, and the vertical heat conducting elements; adhering a metal film on the packaging material via an adhesive layer, to form a package structure; and cutting the package structure into plural chip package units, wherein each of the chip package units includes one of the chips, a portion of the base material, a portion of the metal film, and a portion of the vertical heat conducting elements surrounding the chip.