H01L23/49579

LEAD FRAME PACKAGE

A lead frame package including first conductive layer, first electronic component, lead frames, second conductive layer and package body. First conductive layer has conductive carriers. First electronic component has first pins. Lead frames and first pins are respectively electrically connected to conductive carriers. Second conductive layer has conductive joints respectively electrically connected to lead frames so as to be electrically connected to at least a part of conductive carriers via lead frames. Package body encapsulates first conductive layer, first electronic component, and lead frames. First conductive layer and second conductive layer are located on two opposite sides of first electronic component, respectively.

Spacer Frame for Semiconductor Packages
20220005752 · 2022-01-06 ·

A method of frame handling during semiconductor package production includes: providing a lead frame having leads secured to a periphery of the lead frame by first tie bars; providing a multi-gauge spacer frame having spacers secured to a periphery of the spacer frame by second tie bars, the spacers being thicker than the second tie bars; and aligning the multi-gauge spacer frame with the lead frame such that the spacers and the second tie bars of the multi-gauge spacer frame do not contact the leads of the lead frame. A power semiconductor module and a method of assembling a power semiconductor module are also described.

Reinforced semiconductor die and related methods

Implementations of methods of forming a plurality of reinforced die may include forming a plurality of die on a substrate and patterning a metal gang frame to form a plurality of metal plates. The plurality of metal plates may correspond to the plurality of die. The method may include coupling the metal gang frame over the plurality of die and singulating the plurality of die. Each die of the plurality of die may include the corresponding metal plate from the plurality of metal plates coupled over the plurality of die.

Semiconductor Package and Method for Fabricating a Semiconductor Package

A semiconductor package includes a power semi conductor chip comprising SiC, a leadframe part including Cu, wherein the power semiconductor chip is arranged on the leadframe part, and a solder joint electrically and mechanically coupling the power semiconductor chip to the leadframe part, wherein the solder joint includes at least one intermetallic phase.

Electronic power module

Electronic power modules are disclosed. In one example, an electronic power module includes a first aluminum substrate, a second aluminum substrate, and a third aluminum substrate arranged in a common plane. The electronic power module includes first gap separating the first aluminum substrate from the second aluminum substrate. The electronic power module includes a second gap separating the second aluminum substrate from the third aluminum substrate. The electronic power module includes a first semiconductor switching component electrically coupled to the first aluminum substrate and the second aluminum substrate. The electronic power module includes a second semiconductor switching component electrically coupled to the second aluminum substrate and the third aluminum substrate.

Method for the manufacture of integrated devices including a die fixed to a leadframe

A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

Power module including lead frame unit connecting first substrate and second substrate

A power module is disclosed. A power module according to an embodiment of the present disclosure may include a first substrate and a second substrate spaced apart from each other, an electronic device unit provided on at least either one of the first and second substrates, and a lead frame unit provided between the first and second substrates. One side of the lead frame unit may be connected to an external circuit, and the other side thereof may be configured to electrically connect the first and second substrates. Accordingly, the lead frame unit may perform a function of electrically connecting the first and second substrates instead of a via spacer in the related art.

PRE-PRODUCT, METHOD AND ELECTRONIC DEVICE
20230352377 · 2023-11-02 ·

In one embodiment, a pre-product is configured for an electronic device intended to be loaded with a maximum current of at least 10 A, and comprises: an electronic component, a plurality of power terminals for external electrical contacting the electronic device, and a slide rail at an end of the at least one assigned power terminal remote from the electronic component. The power terminals are electrically connected to the electronic component and extend in a direction away from the electronic component. The slide rail is integrated in a metallic first leadframe together with at least one of the power terminals. A weight of the pre-product is at least 0.1 kg.

Semiconductor device
11538745 · 2022-12-27 · ·

A semiconductor device includes at least one member that is partially sealed by a sealing material and has a part of thereof being exposed from the sealing material, a reversible temperature indicating material, and an irreversible temperature indicating material. Each of the reversible temperature indicating material and the irreversible temperature indicating material is provided on a surface of any one of the at least one member.

Semiconductor device and power converter

A semiconductor device includes: semiconductor elements and; a lead frame including a mount having an upper surface over which the semiconductor elements and are mounted; a sealing resin sealing the lead frame and the semiconductor elements and so that outer leads and of the lead frame protrude outwardly; and a resin wall located on an inner lead between the outer lead and the mount of the lead frame. A vertical thickness of the resin wall is greater than a vertical thickness from a lower surface of the sealing resin to a lower end of the lead frame.