A semiconductor package includes a leadframe, a semiconductor die attached to the leadframe, and a passive component electrically connected to the semiconductor die through the leadframe. The leadframe includes a cavity in a side of the leadframe opposite the semiconductor die, and at least a portion of the passive component resides within the cavity in a stacked arrangement.

It is an object to provide a technique where a snubber capacitor having an appropriate capacitance is usable. A power module includes: a third lead having one end electrically connected to a first connection point and the other end exposed from a package, where the third lead is shorter than a first lead; and a fourth lead having one end electrically connected to a second connection point and the other end exposed from the package, where the fourth lead is shorter than a second lead. A snubber capacitor is attachable to and detachable from the other ends of the third lead and fourth lead.

The invention discloses a package structure for better heat-dissipation or EMI performance. A first conductive element and a second conductive element are both disposed between the top lead frame and the bottom lead frame. The first terminal of the first conductive element is electrically connected to the bottom lead frame, and the second terminal of the first conductive element is electrically connected to the top lead frame. The third terminal of the second conductive element is electrically connected to the bottom lead frame, and the fourth terminal of the second conductive element is electrically connected to the top lead frame. In one embodiment, a heat dissipation device is disposed on the top lead frame. In one embodiment, the molding compound is provided such that the outer leads of the top lead frame are exposed outside the molding compound.

A switch circuit package module includes at least a semiconductor switch unit and at least a first capacitor unit. The semiconductor switch unit includes a first semiconductor switch element and a second semiconductor switch element. The first semiconductor switch element and the second semiconductor switch element include a plurality of sub micro-switch elements. The capacitor unit includes a plurality of capacitors configured to cooperate with the sub micro-switch elements. The capacitors are arranged in a symmetrical distribution surrounded the semiconductor switch unit, such that impedances of any two symmetrical commutation loops each of which mainly consists of one capacitor and two sub micro-switch elements from the first semiconductor switch element and second semiconductor switch element respectively are close to or the same with each other.

In some general aspects, an apparatus may include a first semiconductor die, a second semiconductor die, and a capacitive isolation circuit being coupled to the first semiconductor die and the second semiconductor die. The capacitive isolation circuit may be disposed outside of the first semiconductor die and the second semiconductor die. The first semiconductor die, the second semiconductor die, and the capacitive circuit may be included in a molding of a semiconductor package.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

An electronic circuit component includes: an electronic component; a leadframe that forms a circuit pattern corresponding to an arrangement of the electronic component; a resin element in which a part of the leadframe is disposed by insert molding; a first lid element that covers a first surface of the resin element on which the electronic component is arranged, the first surface of the resin element including a concave land in which the electronic component is arranged; and terminal portions that are arranged on a bottom surface of the land. The terminal portions are a part of the leadframe and are electrically connected to the electronic component. A part of the first lid element that is opposed to the land includes a recess that defines a clearance between the electronic component and the first lid element.

Electronic power device comprising: an active layer comprising several lateral and/or semi-lateral components for which the electrodes are located on a front face of the active layer; an interconnection structure comprising several conducting portions to which component electrodes are connected, and located in contact with these electrodes extending parallel to the active layer; a support comprising a front face on which electrically conducting tracks are located, and in which: the interconnection structure is located between the active layer and the support, the conducting portions being placed in contact with the conducting tracks, or the active layer is placed between the interconnection structure and the support, the conducting portions comprising parts extending next to the active layer and connected to the conducting tracks.

A capacitance structure includes a first input terminal configured to input a first input signal, a first output terminal configured to output the first output signal, a second input terminal configured to input a second input signal, a second output terminal configured to output a second output signal, and a plurality of trench cells. Each of the plurality of trench cells includes a first electrode and a second electrode. The first electrodes of the plurality of trenches are interconnected to form a first electrode of the capacitor structure, the second electrodes of the plurality of trench cells are interconnected to form a second electrode of the capacitor structure, the first electrode of the capacitor structure is connected to the first input signal, and the second electrode of the capacitor structure is connected to the input second signal.

A package structure including a frame structure, a die, an encapsulant, a redistribution structure, and a passive component is provided. The frame structure has a cavity. The die is disposed in the cavity. The encapsulant fills the cavity to encapsulate the die. The redistribution structure is disposed on the encapsulant, the die, and the frame structure. The redistribution structure is electrically coupled to the die. The passive component is disposed on the frame structure and electrically coupled to the redistribution structure through the frame structure. A manufacturing method of a package structure is also provided. The frame structure may provide support, reduce warpage, dissipate heat from the die, act as a shield against electromagnetic interference, and/or provide electrical connection for grounding.