A semiconductor package comprises a leadframe, a component module, and a semiconductor die. The leadframe has a plurality of insertion terminals, a split die pad, and one or more leads. The component module has one or more passive components mounted on a substrate. The semiconductor die has an integrated circuit. The component module is mounted on a split die pad at a first surface of the leadframe and forms an electrical connection with the insertion terminals. Further, the semiconductor die is mounted on the split die pad at a second surface of the leadframe which is opposite to the first surface.

The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.

Provided is a motor control device that prevents a motor from being unable to be driven in the event of a failure of a battery or an inverter that controls a motor current. A motor control device includes a plurality of semiconductor units each including a semiconductor device (an inverter circuit) driving a motor and a battery providing DC power to the semiconductor device (inverter circuit), wherein semiconductor devices (inverter circuits) of the respective semiconductor units are electrically connected in parallel to the motor.

An example device includes a silicon substrate having a first substrate surface and a second substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit (IC), where the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, where the lithium-based battery includes an anode current collector and a cathode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the IC; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the IC.

An example device includes a silicon substrate having a first substrate surface and a second substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit (IC), where the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, where the lithium-based battery includes an anode current collector and a cathode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the IC; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the IC.

A semiconductor package is disclosed. The semiconductor package includes an electrically conducting carrier having a mounting surface, a first level first semiconductor power device having a first load electrode mounted over the mounting surface of the electrically conducting carrier and having a second load electrode opposite the first electrode. The package further includes a first level second semiconductor power device. A first connection element has a first surface connected to the second load electrode of the first level first semiconductor power device. A second connection element has a first surface connected to the second load electrode of the first level second semiconductor power device. The package includes a second level first semiconductor power device and a second level second semiconductor power device.

An example device includes a silicon substrate having a first substrate surface and a second substrate surface; a plurality of layers associated with one or more electronic components of an integrated circuit (IC), where the plurality of layers are deposited on the second substrate surface; a lithium-based battery having a plurality of battery layers deposited on the first substrate surface of the silicon substrate, where the lithium-based battery includes an anode current collector and a cathode current collector; a first through-silicon via (TSV) passing through the silicon substrate and providing an electrical connection between the anode current collector and the plurality of layers associated with the one or more electronic components of the IC; and a second TSV passing through the silicon substrate and providing an electrical connection between the cathode current collector and the plurality of layers associated with the one or more electronic components of the IC.

The present disclosure relates to an integrated chip including a first metal layer over a substrate. A second metal layer is over the first metal layer. An ionic crystal layer is between the first metal layer and the second metal layer. A metal oxide layer is between the first metal layer and the second metal layer. The first metal layer, the second metal layer, the ionic crystal layer, and the metal oxide layer are over a transistor device that is arranged along the substrate.

An electronic package with a battery and method for producing the electronic package uses a bent leadframe having flanged ends that are physically and electrically connected to a substrate so that the battery is encircled by the bent leadframe and the substrate, and the substrate is positioned between the battery and an electronic component. A first terminal of the battery is physically and electrically connected to the substrate and a second terminal of the battery is physically and electrically connected to the bent leadframe, which provides an electrical connection between the battery and the electronic component.

A self-powered microelectronic semiconductor device includes low temperature interconnection and encapsulation materials to enable integration of a battery with the microelectronics package during manufacture. The package includes a partially exposed leadframe or leads of a substrate for connecting the battery. The battery includes one or more terminal connectors that can either be manufactured by the battery vendor or externally attached using spot/laser or resistance welding. The steps of connecting the battery to the package are performed after the microelectronic package assembly to ensure the battery does not experience any high temperatures from the package assembly process. Cavities are formed in an overmolded molding compound to expose the leadframe or battery pads for electronic connection. A low temperature electrically conductive bonding agent is used to create the electrical and mechanical bond of the battery tabs to the leadframe. A low temperature encapsulant is then applied over the package and mounted battery.