H01L23/49805

Package structure with interconnection between chips and packaging method thereof

A packaging method includes steps of: forming first and second wiring layers electrically connected to each other on two opposite surfaces of a substrate; then configuring mother substrate interconnecting bumps on the first wiring layer and along perimeter of a daughter substrate unit, and then cutting along the perimeter of the daughter substrate unit to expose lateral faces of the mother substrate interconnecting bumps and configuring solder materials thereon; then configuring first and second chips on the first and the second wiring layers to form electrical interconnection between the two chips. A package structure enables interconnecting two chips through one single daughter substrate unit with its wiring layers directly connecting with lateral face contacts of the mother carrier substrate through the mother substrate interconnecting bumps. Hence, area of the daughter substrate unit is reduced; lengths of the interconnection paths are shortened, and qualities of communication and space utilization are enhanced.

POWER SEMICONDUCTOR DEVICE

When a power semiconductor device is energized, heat generated from upper-side power semiconductor chips mounted on a P-potential electrode transfers to a first heat mass portion and a second heat mass portion, and heat generated from lower-side power semiconductor chips mounted on a intermediate potential electrode transfers to a resistor. A lead frame, the power semiconductor chip, an inner lead and the resistor are placed in symmetry with respect to a centerline, which can reduce the difference among the temperature increases of the power semiconductor chips when energized. In this way, transient temperature increase of the power semiconductor chip can be suppressed without adding a new member, such as a heat diffusion plate.

LEADFRAME TOP-HAT MULTI-CHIP SOLUTION
20170287816 · 2017-10-05 · ·

A semiconductor package may include an electrically conductive leadframe having a aperture extending from an upper surface of the leadframe to the lower surface of the leadframe. A wirebond die may be attached or affixed to the upper surface of the leadframe in a location that at least partially obstructs the aperture. A flip-chip die may be disposed proximate the bottom surface of the leadframe at least partially in the aperture. The flip-chip die may be physically coupled to the wirebond die, the leadframe, or both. A mold compound that exposes the lands on the leadframe and the solder bumps or balls on the flip-chip die may at least partially encapsulate the semiconductor package.

Semiconductor package

A semiconductor package includes: a first substrate including a first ground conductor disposed on at least a second surface of a first surface and the second surface; a plurality of electronic elements mounted on the first surface and the second surface of the first substrate; a second substrate adhered to the second surface of the first substrate and including a penetration part formed to accommodate the plurality of electronic elements mounted on the second surface of the first substrate and a second ground conductor connected to the first ground conductor; a molded portion encapsulating the plurality of electronic elements mounted on the first surface of the first substrate; and a shielding layer formed on outer surfaces of the molded portion and the first substrate and at least a portion of a side surface of the second substrate to shield electromagnetic waves.

ELECTRONIC CIRCUIT PACKAGE

Disclosed herein is an electronic circuit package includes: a substrate having a power supply pattern; an electronic component mounted on a surface of the substrate; a mold resin covering the surface of the substrate so as to embed therein the electronic component; a magnetic film formed so as to contact at least a top surface of the mold resin; and a metal film electrically connected to the power supply pattern and covering the mold resin through the magnetic film.

Redirecting solder material to visually inspectable package surface

A package comprising an electronic chip, a laminate type encapsulant in and/or on which the electronic chip is mounted, a solderable electric contact on a solder surface of the package, and a solder flow path on and/or in the package which is configured so that, upon soldering the electric contact with a mounting base, part of solder material flows along the solder flow path towards a surface of the package at which the solder material is optically inspectable after completion of the solder connection between the mounting base and the electric contact.

Fabric With Embedded Electrical Components

Apparatus, comprising fabric (62) formed from fibers (74); and an electrical component (20) having first and second perpendicular fiber guiding structures, wherein a first of the fibers is soldered in the first fiber guiding structure and a second of the fibers is soldered in the second fiber guiding structure.

Die support for enlarging die size

A chip package, in some embodiments, comprises: a die flag; one or more die supports; and a die mounted on the die flag and on said one or more die supports, at least one surface of said die having an area larger than an area of at least one surface of the die flag.

Semiconductor device

A semiconductor device may be provided with: a semiconductor chip; an encapsulant encapsulating the semiconductor chip therein; and a conductor member joined to the semiconductor chip via a solder layer within the encapsulant. The conductor member may comprise a joint surface in contact with the solder layer and a side surface extending from a peripheral edge of the joint surface. The side surface may comprise an unroughened area and a roughened area that is greater in surface roughness than the unroughened area. The unroughened area may be located adjacent to the peripheral edge of the joint surface.

HIGH RELIABILITY WAFER LEVEL SEMICONDUCTOR PACKAGING
20170236761 · 2017-08-17 · ·

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.