A circuit board having a plurality of conductive layers including a first conductive layer and a second conductive layer is provided. The circuit board includes a plurality of non-conductive layers in-between respective conductive layers of the plurality of conductive layers. The plurality of non-conductive layers include at least a first non-conductive layer disposed between the first conductive layer and the second conductive layer. At least one collapsed stud bump extends at least partially through the first non-conductive layer to electrically couple the first conductive layer to the second conductive layer.

A layout structure of flexible circuit board includes a flexible substrate, a circuit layer, a flip-chip element and an anti-stress circuit layer. A chip mounting area and a circuit area are defined on a top surface of the flexible substrate. Bonding circuits and transmission circuits of the circuit layer are disposed on the chip mounting area and the circuit area respectively. The flip-chip element is disposed on the chip mounting area and includes bumps and a chip having a long side margin and conductive pads, the bumps are provided to connect the conductive pads and the bonding circuits. Anti-stress circuits of the anti-stress circuit layer are disposed on the chip mounting area and parallel to the long side margin of the chip, and the bumps are located between the anti-stress circuits and the long side margin of the chip.

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

A substrate that includes a core layer comprising a first surface and a second surface, at least one first dielectric layer located over a first surface of the core layer, at least one second dielectric layer located over a second surface of the core layer, high-density interconnects located over a surface of the at least one second dielectric layer, interconnects located over the surface of the at least one second dielectric layer, and a solder resist layer located over the surface of the at least one second dielectric layer. A first portion of the solder resist layer that is touching the high-density interconnects includes a first thickness that is equal or less than a thickness of the high-density interconnects. A second portion of the solder resist layer that is touching the interconnects includes a second thickness that is greater than a thickness of the interconnects.

A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

A method to produce a semiconductor package or system-on-flex package comprising bonding structures for connecting IC/chips to fine pitch circuitry using a solid state diffusion bonding is disclosed. A plurality of traces is formed on a substrate, each respective trace comprising five different conductive materials having different melting points and plastic deformation properties, which are optimized for both diffusion bonding of chips and soldering of passives components.

Embodiments of mechanisms for forming a package are provided. The package includes a substrate and a contact pad formed on the substrate. The package also includes a conductive pillar bonded to the contact pad through solder formed between the conductive pillar and the contact pad. The solder is in direct contact with the conductive pillar.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

A method produces a device adapted to be implanted into the human body for purposes such as neural stimulation, sensing or the like. The method includes: providing a stretchable layer or membrane of an insulating material; forming on the layer or membrane at least one stretchable conductive path; depositing at least one small bolus of a soft and conductive paste or material onto pre-defined areas or portions of the at least one conductive path, and inserting a first end portion of a conductive element 71 into the at least one bolus of soft conductive paste or material. A second end portion of the conductive element opposite to the first end portion is not inserted into the at least one bolus.

A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.