Patent classifications
H01L23/49822
PACKAGE DEVICE
The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.
PRINTED CIRCUIT BOARD AND SEMICONDUCTOR PACKAGE USING THE SAME
A printed circuit board includes: a substrate structure having a first surface including a chip mounting region on which a semiconductor chip is mounted and a second surface opposite to the first surface, the second surface having a rectangular shape having first to fourth edges and first to fourth corners formed by the first to fourth edges, and pad patterns on the second surface of the substrate structure, wherein the second surface includes a first region including a region corresponding to the chip mounting region and in contact with the first to fourth edges, respectively, and second regions adjacent to the first to fourth corners, respectively and spaced apart from each other by the first region, wherein the pad patterns include first pad patterns in the first region and surface-treated with a nickel/gold (Ni/Au) layer, and second pad patterns in the second regions and surface-treated with an organic solderability preservative.
SEMICONDUCTOR PACKAGE
A semiconductor package includes an interposer, an electronic device having a first side surface and a second side surface opposite to the first side surface, and including a plurality of memory dies stacked in a vertical direction, at least one first through pipe passing through the electronic device in the vertical direction adjacent to the first side surface, and moving a cooling liquid therein, and a plurality of thermal transmission lines extending in a horizontal direction inside the memory die, and extending in parallel from the first through pipe toward the second side surface.
Package structure and manufacturing method thereof
A package structure includes at least one first redistribution layer, at least one second redistribution layer, a chip pad, a solder ball pad, a chip, a solder ball, and a molding compound. The first redistribution layer includes a first dielectric layer and a first redistribution circuit that fills a first opening and a second opening of the first dielectric layer. The first dielectric layer is aligned with the first redistribution circuit. The second redistribution layer includes a second and a third dielectric layers and a second redistribution circuit. The third dielectric layer is aligned with the second redistribution circuit. The chip pad and the solder ball pad are electrically connected to the first and the second redistribution circuits respectively. The chip and the solder ball are disposed on the chip pad and the solder ball pad respectively. The molding compound at least covers the chip and the chip pad.
SEMICONDUCTOR PACKAGE INCLUDING A LOWER SUBSTRATE AND AN UPPER SUBSTRATE
A semiconductor package includes: a lower substrate including a lower wiring layer; a semiconductor chip disposed on the lower substrate and electrically connected to the lower wiring layer; an upper substrate disposed on the semiconductor chip and including a core layer, an upper wiring layer, a plurality of dummy structures, and a solder resist layer, wherein the core layer has through-holes, wherein the plurality of dummy structures are disposed in the through-holes and are electrically insulated from the upper wiring layer, and wherein the solder resist layer covers the upper wiring layer and extends in the through-holes; a connection structure disposed between the lower substrate and the upper substrate; an encapsulant disposed between the lower substrate and the upper substrate and encapsulating at least a portion of each of the semiconductor chip and the connection structure; and a connection bump disposed on the lower substrate.
UNDERFILL CUSHION FILMS FOR PACKAGING SUBSTRATES AND METHODS OF FORMING THE SAME
A semiconductor structure includes a fan-out package, a packaging substrate, an solder material portions bonded to the fan-out package and the packaging substrate, an underfill material portion laterally surrounding the solder material portions, and at least one cushioning film located on the packaging substrate and contacting the underfill material portion and having a Young's modulus is lower than a Young's modulus of the underfill material portion.
SEMICONDUCTOR PACKAGE
Disclosed is a semiconductor package comprising a semiconductor chip, a redistribution pattern on a bottom surface of the semiconductor chip and coupled to the semiconductor chip, a protection layer that covers a bottom surface of the redistribution pattern, a conductive pattern on a bottom surface of the protection layer and coupled to the redistribution pattern, a buffer pattern in contact with a bottom surface of a first part of the conductive pattern and with the bottom surface of the protection layer, and an under bump pattern on a bottom surface of the second part of the conductive pattern and covering a bottom surface and a side surface of the buffer pattern. The under bump pattern is coupled to the second part of the conductive pattern.
SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
A semiconductor package includes a first semiconductor chip on a substrate, a buried solder ball on the substrate and spaced apart from the first semiconductor chip, a first molding layer on the substrate and encapsulating and exposing the first semiconductor chip and the buried solder ball, a second semiconductor chip on the first molding layer and vertically overlapping the buried solder ball and a portion of the first semiconductor chip, and a second molding layer on the first molding layer and covering the second semiconductor chip. The second semiconductor chip is supported on the first semiconductor chip through a dummy solder ball between the first and second semiconductor chips. The second semiconductor chip is connected to the buried solder ball through a signal solder ball between the buried solder ball and the second semiconductor chip.
SEMICONDUCTOR PACKAGE INCLUDING REDISTRIBUTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor package according to the disclosure includes a terminal, a conductive pattern connected to the terminal, a barrier layer covering a top surface and a first side wall of the conductive pattern, an insulating layer surrounding the barrier layer, a protection layer covering a bottom surface of the insulating layer and a bottom surface of the barrier layer, a redistribution pattern connected to the barrier layer, a semiconductor chip electrically connected to the redistribution pattern, and a molding layer surrounding the semiconductor chip. A top surface of the protection layer includes a first portion contacting the conductive pattern, and a second portion contacting the barrier layer.
SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
A semiconductor package includes a wiring structure that includes a first insulating layer and a first conductive pattern inside the first insulating layer, a first semiconductor chip disposed on the wiring structure, an interposer that includes a second insulating layer, a second conductive pattern inside the second insulating layer, and a recess that includes a first sidewall formed on a first surface of the interposer that faces the first semiconductor chip and a first bottom surface connected with the first sidewall, where the recess exposes at least a portion of the second insulating layer, a first element bonded to the interposer and that faces the first semiconductor chip inside the recess, and a mold layer that covers the first semiconductor chip and the first element.