A semiconductor package is provided. The semiconductor package includes a redistribution structure having a front surface and a rear surface opposite the front surface, the redistribution structure including an insulating layer and a redistribution conductor provided in the insulating layer; a semiconductor chip provided on the rear surface and including a connection pad electrically connected to the redistribution conductor; an encapsulant provided on at least a portion of the semiconductor chip; under-bump metal (UBM) vias extending from the redistribution conductor to the front surface of the redistribution structure within the insulating layer; UBM pads provided on the front surface of the redistribution structure to correspond to the UBM vias, respectively, and each UMB pad of the UBM pads having an exposed surface convexly protruding away from the front surface of the redistribution structure; and a metal bump provided on the UBM pads and contacting the exposed surface of each UMB pad of the UBM pads.

The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.

An electronic package is provided, which includes a substrate structure and an electronic element and a passive element disposed on the substrate structure, where a die placement area and a functional area separated from each other are defined on a surface of a substrate body of the substrate structure, so that a routing layer is arranged with linear conductive traces with a smaller width in the die placement area, and a sheet-shaped circuit with a larger width and electrically connected to the linear conductive traces is arranged in the functional area, so as to reduce a metal area on the surface of the substrate body, thereby avoiding the problem of warpage caused by stress concentration in the die placement area.

A method for making a semiconductor device is provided. The method includes: providing a package including: a substrate including a first surface and a second surface opposite to the first surface; a first electronic component mounted on the first surface of the substrate; a second electronic component mounted on the second surface; and a contact pad formed on the second surface of the substrate, wherein the contact pad is outside of a projection of the second electronic component on the second surface of the substrate; and a first encapsulant disposed on the first surface of the substrate and covering the first electronic component; forming a second encapsulant over and around the second electronic component, wherein the contact pad is exposed from the second encapsulant; planarizing the second encapsulant to expose the second electronic component; and forming a bump on the contact pad of the second surface of the substrate.

Generally, the present disclosure provides example embodiments relating to a package that may be attached to a printed circuit board (PCB). In an embodiment, a structure includes a package. The package includes one or more dies and metal pads on an exterior surface of the package. At least some of the metal pads are first solder ball pads. The structure further includes pins, and each of the pins is attached to a respective one of the metal pads.

A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

The present disclosure provides an electronic device including a substrate, an extending element, a conductive element and a first insulating layer. The substrate includes an edge. The extending element is disposed on the substrate and includes a first conductive layer and a semiconductor layer, the first conductive layer and the semiconductor layer are overlapped, and the semiconductor layer extends to the edge of the substrate. The conductive element is overlapped with the first conductive layer. The insulating layer is disposed between the conductive element and the extending element.

According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.

A semiconductor package includes a semiconductor die with an active surface and an inactive surface, the active surface including metal pillars providing electrical connections to functional circuitry of the semiconductor die, and a backside metal layer on the inactive surface. The backside metal layer is attached to the inactive surface. The semiconductor package further includes a plurality of leads with each of the leads including an internal leadfinger portion and an exposed portion that includes a bonding portion. Distal ends of the metal pillars are in contact with and electrically coupled to the internal leadfinger portions. The backside metal layer is exposed on an outer surface of the semiconductor package. The bonding portions and the backside metal layer approximately planar to each other.

Various embodiments relate to a semiconductor package. The semiconductor package includes a first die. The first die includes a first bridge interconnect region. The semiconductor package further includes a second die. The second die includes a second bridge interconnect region. The semiconductor package includes a bridge die. The bridge die includes a first contact area to connect to the first bridge interconnect region and a second contact area to connect to the second bridge interconnect region. In the semiconductor package, the first bridge interconnect region is larger than the second bridge interconnect region. Additionally, each of the first bridge interconnect region and the second bridge interconnect region include a plurality of conductive bumps. An average pitch between adjacent bumps of the first bridge interconnect region is larger than an average pitch between adjacent bumps of the second bridge interconnect region.