Patent classifications
H01L24/06
SEMICONDUCTOR PACKAGE
Disclosed is a semiconductor package comprising a substrate that includes a plurality of substrate pads on a top surface of the substrate, a first semiconductor chip on the substrate, a second semiconductor chip on the first semiconductor chip, and a plurality of first bonding wires on a top surface of the first semiconductor chip and coupled to the substrate pads. The first semiconductor chip includes a first lower signal pad, a second lower signal pad laterally spaced apart from the first lower signal pad, and a lower signal redistribution pattern electrically connected to the first lower signal pad and the second lower signal pad. One of the first bonding wires is coupled to the first lower signal pad. Any of the first bonding wires is not on a top surface of the second lower signal pad.
Integrated circuit package and method of forming same
Various embodiments of an integrated circuit package and a method of forming such package are disclosed. The package includes a substrate having a core layer disposed between a first dielectric layer and a second dielectric layer, a die disposed in a cavity of the core layer, and an encapsulant disposed in the cavity between the die and a sidewall of the cavity. The package further includes a first patterned conductive layer disposed within the first dielectric layer, a device disposed on an outer surface of the first dielectric layer such that the first patterned conductive layer is between the device and the core layer, a second patterned conductive layer disposed within the second dielectric layer, and a conductive pad disposed on an outer surface of the second dielectric layer such that the second patterned conductive layer is between the conductive pad and the core layer.
Light emitting device
A light emitting device includes: a base having a first stepped portion and a second stepped portion; a light emitting element; an electronic member configured to be irradiated by light emitted from the light emitting element; a first wiring region located on the first stepped portion; a second wiring region located on the second stepped portion; wires connected to the light emitting element and the electronic member. The wires includes a first and second wires. The first wire has a first end that is connected to the first wiring region, and a second end. The second wire has a first end that is connected to the second wiring region, and a second end. A position of the second end of the first wire relative to the bottom face is lower than a position of the second end of the second wire relative to the bottom face.
Semiconductor device and method for production of semiconductor device
A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.
Packaging method and associated packaging structure
The present disclosure provides a packaging method, including: providing a first semiconductor substrate; forming a bonding region on the first semiconductor substrate, wherein the bonding region of the first semiconductor substrate includes a first bonding metal layer and a second bonding metal layer; providing a second semiconductor substrate having a bonding region, wherein the bonding region of the second semiconductor substrate includes a third bonding layer; and bonding the first semiconductor substrate to the second semiconductor substrate by bringing the bonding region of the first semiconductor substrate in contact with the bonding region of the second semiconductor substrate; wherein the first and third bonding metal layers include copper (Cu), and the second bonding metal layer includes Tin (Sn). An associated packaging structure is also disclosed.
Method of treatment of an electronic circuit for a hybrid molecular bonding
A method of treatment of an electronic circuit including at a location at least one electrically-conductive test pad having a first exposed surface. The method includes the at least partial etching of the test pad from the first surface, and the forming on the electronic circuit of an interconnection level covering said location and including, on the side opposite to said location, a second planar surface adapted for the performing of a hybrid molecular bonding.
High electric-thermal performance and high-power density power module
A rectangular power module with a body having two short ends defining a length and two long sides defining a width having three parallel circuit paths crossing the short width distance from side to side using side positioned gate terminals and planar top positioned top power terminal positioned between MOSFETS in the circuit for even thermal positioning and reduced current path, inductance, and resistance and increased power density.
SENSOR PACKAGE STRUCTURE
A sensor package structure is provided and includes a substrate, a sensor chip, a ring-shaped supporting layer, and a light-permeable sheet. The sensor chip is disposed on and electrically coupled to the substrate. The ring-shaped supporting layer is disposed on the sensor chip and surrounds a sensing region of the sensor chip. The light-permeable sheet has a ring-shaped notch recessed in a peripheral edge of an inner surface of the light-permeable sheet, and a depth of the ring-shaped notch with respect to the inner surface is at least 10 tim. The light-permeable sheet is disposed on the ring-shaped supporting layer through the ring-shaped notch, and the inner surface is not in contact with the ring-shaped supporting layer, so that the inner surface of the light-permeable sheet, an inner side of the ring-shaped supporting layer, and the top surface of the sensor chip jointly define an enclosed space.
LIGHT MODULE AND LIDAR APPARATUS HAVING AT LEAST ONE LIGHT MODULE OF THIS TYPE
A light module has a carrier with a circuit die. On the top side of the carrier, a light-emitting diode die, and a charge store component are electrically connected to the conduction path terminal fields of a transistor by means of die-to-die bondings. The electrical connection between the two dies and the conduction path of the transistor is as short as possible. A terminal field is situated in each case on the top side of the two dies, which terminal fields are connected to one another using a first bonding wire. The charge store component is charged by means of a charging circuit which is electrically connected to the charge store component via a second bonding wire. The second bonding wire is longer than the first bonding wire. The light module may be part of a LIDAR apparatus.
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING OF A SEMICONDUCTOR DEVICE
A semiconductor device is provided that includes a lead frame, a die attached to the lead frame using a first solder, a source clip and a gate clip attached to the die using a second solder, and a drain clip attached to the lead frame. The semiconductor device is inverted, so that the source clip and the gate clip are positioned on the bottom side of the semiconductor device, and the lead frame is positioned on the top side of the semiconductor device so that the lead frame is a top exposed drain clip.