A display device and method for fabrication thereof includes a plurality of pixel electrodes and common electrode connection parts that are spaced from each other on a first substrate, a plurality of light emitting elements on the plurality of pixel electrodes, a plurality of common electrode elements on the common electrode connection parts, and a common electrode layer on the plurality of light emitting elements and the plurality of common electrode elements, wherein each of the plurality of light emitting element includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, each of the plurality of common electrode elements includes at least the second semiconductor layer, and the common electrode layer includes a same material as the second semiconductor layer to be connected to the second semiconductor layers of the plurality of light emitting elements.

Elastic bonding layers for semiconductor die assemblies, and associated systems and methods are disclosed. In an embodiment, a first semiconductor die includes an elastic bonding layer at a surface, to which a second semiconductor die can be directly bonded to form a bonding interface between the first and second semiconductor dies. At the bonding interface, a first conductive pad of the first semiconductor die can be conjoined to a second conductive pad of the second semiconductor die to form an interconnect during the direct bonding process. In some cases, there may be irregularities at the bonding interface, which may interfere with the bonding process. The elastic bonding layer may include a polymer (or organic) material configured to accommodate stress generated by the irregularities. In some embodiments, a thickness of the elastic bonding layer is predetermined based on a width of the first (or second) conductive pad.

Methods, systems, and devices for dynamic power distribution for stacked memory are described. A stacked memory device may include switching components that support dynamic coupling between a shared power source of the memory device and circuitry associated with operating memory arrays of respective memory dies. In some examples, such techniques include coupling a power source with array circuitry based on an access activity or a degree of access activity for the array circuitry. In some examples, such techniques include isolating a power source from array circuitry based on a lack of access activity or a degree of access activity for the array circuitry. The dynamic coupling or isolation may be supported by various signaling of the memory device, such as signaling between memory dies, signaling between a memory die and a central controller, or signaling between the memory device and a host device.

Semiconductor devices may include a first stack structure including interlayer insulating layers and gate electrodes alternately stacked in a first direction perpendicular to an upper surface of a substrate on a first region of the substrate and including a first lower stack structure and a first upper stack structure, a second stack structure including the interlayer insulating layers and sacrificial insulating layers alternately stacked in the first direction on a second region of the substrate and including a second lower stack structure and a second upper stack structure, a channel structure penetrating the first upper stack structure and the first lower stack structure, extending in the first direction, and including a channel layer, and an align key structure penetrating the second lower stack structure and extending in the first direction. The second upper stack structure may include a first align key region on the align key structure.

To help reduce program disturbs in non-selected NAND strings of a non-volatile memory, a sub-block based boosting scheme in introduced. For a three dimensional NAND memory structure, in which the memory cells above a joint region form an upper sub-block and memory cells below the joint region form a lower sub-block, dummy word lines in the joint region act as select gates to allow boosting at the sub-block level when the lower block is being programmed in a reverse order.

A display device includes first pixel circuit unit, second pixel circuit unit, third pixel circuit unit, and fourth pixel circuit unit spaced from one another, first pixel electrode on the first pixel circuit unit, second pixel electrode on the second pixel circuit unit, third pixel electrode on the third pixel circuit unit, fourth pixel electrode on the fourth pixel circuit unit, first light-emitting element electrically connected to the first pixel electrode, the first light-emitting element configured to emit first light, second light-emitting element electrically connected to the second pixel electrode, the second light-emitting element configured to emit second light, and third light-emitting element electrically connected to the third pixel electrode, the third light-emitting element configured to emit third light. A length of the first light-emitting element in a first direction is greater than each of a length of the second and third light-emitting elements in the first direction.

A display device and method for fabrication thereof are provided. The display device includes a first substrate, pixel electrodes on the first substrate, light emitting elements respectively on the pixel electrodes, and including first semiconductor layers, second semiconductor layers, active layers respectively between the first semiconductor layers and the second semiconductor layers, a first light emitting element including a first active layer of the active layers, a second light emitting element including a second active layer of the active layers that is different from the first active layer, a third light emitting element including a third active layer of the active layers that is different from the first and second active layers, and a fourth light emitting element including a fourth active layer of the active layers that is different from the first to third active layers, and a common electrode layer on the light emitting elements.

A semiconductor package includes: a first wiring structure including a first wiring layer, and a second wiring layer disposed on the first wiring layer, and connected to a first connecting structure placed disposed on the first wiring layer; a first semiconductor chip disposed on the first wiring structure and connected to the first wiring structure through a first connecting pad disposed on a first side of the first semiconductor chip; a second wiring structure disposed on the first semiconductor chip; and an insulating member disposed between the first and second wiring structures, wherein the first wiring structure further includes a first signal pattern that is electrically connected to the first connecting pad, and the first signal pattern redistributes the first connecting pad to the first connecting structure via the insulating member.

A base member for a light emitting device includes a bottom part and a frame part. The frame part has an upper surface, a lower surface, and a step portion. The frame part has a bonding surface bonded to the bottom part, and defining a planar surface of the step portion at a lower surface side, first and second inner surfaces, a first planar surface defining a planar surface of the step portion at an upper surface side, and first and second electrode layers electrically connected to each other, the second electrode layer being disposed on the first planar surface while the first electrode layer being not disposed on the first planar surface. The step portion extends along an entire periphery of the frame part in a bottom view, and the step portion does not extend along the entire periphery of the frame part in a top view.

A heat spreading material is integrated into a composite die structure including a first IC die having a first dielectric material and a first electrical interconnect structure, and a second IC die having a second dielectric material and a second electrical interconnect structure. The composite die structure may include a composite electrical interconnect structure comprising the first interconnect structure in direct contact with the second interconnect structure at a bond interface. The heat spreading material may be within at least a portion of a dielectric area through which the bond interface extends. The heat spreading material may be located within one or more dielectric materials surrounding the composite interconnect structure, and direct a flow of heat generated by one or more of the first and second IC dies.