Patent classifications
H01L24/24
Wafer-level package structure
Wafer-level packaging structure is provided. First chips are bonded to the device wafer. A first encapsulation layer is formed on the device wafer, covering the first chips. The first chip includes: a chip front surface with a formed first pad, facing the device wafer; and a chip back surface opposite to the chip front surface. A first opening is formed in the first encapsulation layer to expose at least one first chip having an exposed chip back surface for receiving a loading signal. A metal layer structure is formed covering the at least one first chip, a bottom and sidewalls of the first opening, and the first encapsulation layer, followed by an alloying treatment on the chip back surface and the metal layer structure to form a back metal layer on the chip back surface.
Chip package with antenna element
Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die having a conductive element and an antenna element over the semiconductor die. The chip package also includes a first conductive feature electrically connecting the conductive element of the semiconductor die and the antenna element. The chip package further includes a protective layer surrounding the first conductive feature. In addition, the chip package includes a second conductive feature over the first conductive feature. A portion of the second conductive feature is between the first conductive feature and the protective layer.
Method for fabricating semiconductor device with protection layers
The present disclosure provides a method for fabricating a semiconductor device including performing a bonding process to bond a second die onto a first die, forming a first mask layer on the second die, forming a first opening along the first mask layer and the second die, and extending to the first die, forming isolation layers on sidewalls of the first opening, forming protection layers covering upper portions of the isolation layers, and forming a conductive filler layer in the first opening.
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
A display device includes a substrate, a light emitting element on the substrate, and including a first end portion and a second end portion that are aligned in a first direction that is substantially parallel to an upper surface of the substrate, a first contact electrode in contact with the first end portion of the light emitting element, a first electrode on the first contact electrode, and electrically connected to the first end portion of the light emitting element through the first contact electrode, and a second electrode electrically connected to the second end portion of the light emitting element.
DISPLAY DEVICE
A display device includes a display area comprising pixels, a fan-out area, a pad area, a display driver, a metal layer disposed on a substrate, a data line, a first voltage line, and a second voltage line extending in a first direction on the metal layer in the display area, a fan-out line electrically connecting the data line to the display driver on the metal layer in the fan-out area, a gate line disposed on the metal layer in the display area and extending in a second direction intersecting the first direction, a source-drain layer disposed on the gate line, and an electrode layer disposed on the source-drain layer. The first voltage line includes a first plate portion disposed on the source-drain layer in the fan-out area, and the second voltage line comprises a second plate portion disposed on the electrode layer in the fan-out area.
PACKAGE STRUCTURE AND PACKAGE SYSTEM
This application discloses a package structure and a package system. The package structure may be used for packaging various types of chips, and is coupled to a PCB, so as to form the package system. The package structure includes a package base layer, a chip, a package body, and a connecting assembly. The package base layer has a first surface and a second surface that are opposite to each other. The chip is coupled to the first surface, and there is a chip pad on a surface that is of the chip and that is away from the package base layer. The package body covers the package base layer and the chip to protect the structure, and the chip pad is wired to a surface of the package body through the connecting assembly.
PIXEL AND DISPLAY DEVICE INCLUDING THE SAME
A pixel may include first and second electrodes spaced apart from each other along a first direction, first light emitting elements arranged along a second direction in a first area between the first electrode and the second electrode, and including a first end portion adjacent to the first electrode and a second end portion adjacent to the second electrode, a first contact electrode on the first end portions of the first light emitting elements, and including a transparent electrode layer, a second contact electrode on the second end portions of the first light emitting elements, and including a reflective electrode layer, a first bank pattern overlapping a portion of the first electrode beneath the first electrode, and a second bank pattern overlapping a portion of the second electrode beneath the second electrode, wherein the first and second bank patterns are spaced apart from the first area by different distances.
PACKAGE STRUCTURE AND METHOD OF FORMING THE SAME
A package structure and a method of forming the same are provided. The package structure includes a die, an encapsulant, a redistribution layer (RDL) structure, a passive device, and a plurality of dummy items. The encapsulant laterally encapsulates the die. The RDL structure is disposed on the die and the encapsulant. The passive device is disposed on and electrically bonded to the RDL structure. The plurality of dummy items are disposed on the RDL structure and laterally aside the passive device, wherein top surfaces of the plurality of dummy items are higher than a top surface of the passive device.
PACKAGE AND METHOD OF MANUFACTURING THE SAME
A package including a device die and an encapsulant is provided. The device die includes a semiconductor substrate, an interconnect structure, a conductive via, and a dielectric layer. The interconnect structure is disposed over the semiconductor substrate. The conductive via is disposed over and electrically coupled to the interconnect structure. The dielectric layer is disposed over the interconnect structure and laterally encapsulating the conductive via, wherein the dielectric layer includes a sidewall and a bottom surface facing the interconnect structure, and the sidewall of the dielectric layer is tilted with respect to the bottom surface of the dielectric layer. The encapsulant laterally encapsulates the device die.
SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF SEMICONDUCTOR PACKAGE
A semiconductor package includes a lower semiconductor device, a plurality of conductive pillars, an upper semiconductor device, an encapsulating material, and a redistribution structure. The plurality of conductive pillars are disposed on the lower semiconductor device along a direction parallel to a side of the lower semiconductor device. The upper semiconductor device is disposed on the lower semiconductor device and reveals a portion of the lower semiconductor device where the plurality of conductive pillars are disposed, wherein the plurality of conductive pillars disposed by the same side of the upper semiconductor device and the upper semiconductor device comprises a cantilever part cantilevered over the at least one lower semiconductor device. The encapsulating material encapsulates the lower semiconductor device, the plurality of conductive pillars, and the upper semiconductor device. The redistribution structure is disposed over the upper semiconductor device and the encapsulating material.