A power module of the invention includes a power semiconductor element mounted on a circuit board, and an adapter connected to a front-surface main electrode of the element, wherein the adapter includes a main-electrode wiring member which is connected to the front-surface main electrode of the element; and wherein the main-electrode wiring member includes: an element connection portion connected to the front-surface main electrode of the element; a board connection portion which is placed outside the element connection portion and connected to the circuit board; and a connector connection portion which is placed outside the element connection portion and connected to an external electrode through a connector.

An integrated circuit package includes a lead frame, a first die adhered to the lead frame on a first side of the first die, and a first clip having a clip foot adhered to the lead frame. The first clip has a first side and a second side. A first die attachment region is defined by a first group of four notches in the first side of the first clip. The first clip extends from the lead frame and contacts a second side of the first die at the first die attachment region via a first layer of solder paste. The integrated circuit package further has a second die adhered to the second side of the first clip on a first side of the second die, and a second clip having a clip foot adhered to the lead frame. The second clip has a first side and a second side. A second die attachment region is defined by a second group of four notches in the first side of the second clip. The second clip extends from the lead frame and contacts a second side of the second die at the second die attachment region via a second layer of solder paste.

In one example, a method of manufacturing a semiconductor device includes providing a substrate having substrate terminals and providing a component having a first component terminal and a second component terminal adjacent to a first major side of the component. The method includes providing a clip structure having a first clip, a second clip, and a clip connector coupling the first clip to the second clip. The method includes coupling the first clip to the first component terminal and a first substrate terminal and coupling the second clip to a second substrate terminal. The method includes encapsulating the component, portions of the substrate, and portions of the clip structure. the method includes removing a sacrificial portion of the clip connector while leaving a first portion of the clip connector attached to the first clip and leaving a second portion of the clip connector attached to the second clip. In some examples, the first portion of the clip connector includes a first portion surface, the second portion of the clip connector includes a second portion surface, and the first portion surface and the second portion surface are exposed from a top side of the encapsulant after the removing. Other examples and related structures are also disclosed herein.

A strip of semiconductor devices includes a plurality of leadframes electrically isolated from each other, a plurality of semiconductor chips, and an encapsulation material. Each leadframe has a first surface and a second surface opposite to the first surface. At least one semiconductor chip of the plurality of semiconductor chips is electrically coupled to the first surface of each leadframe. The encapsulation material encapsulates each semiconductor chip and at least portions of each leadframe.

In some embodiments, a semiconductor device includes a semiconductor die including a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a metallization structure located on the first surface. The metallization structure includes a first conductive layer on the first surface, a first insulating layer on the first conductive layer, a second conductive layer on the first insulating layer, a second insulating layer on the second conductive layer and a third conductive layer on the second insulting layer. The third conductive layer includes at least one source pad electrically coupled to the source electrode, at least one drain pad electrically coupled to the drain electrode and at least one gate pad electrically coupled to the gate electrode.

A semiconductor device includes a semiconductor die attached to a substrate and a metal clip attached to a side of the semiconductor die facing away from the substrate by a soldered joint. The metal clip has a plurality of slots dimensioned so as to take up at least 10% of a solder paste reflowed to form the soldered joint. Corresponding methods of production are also described.

A power semiconductor package includes a power semiconductor chip, an electrical connector arranged at a first side of the power semiconductor chip and having a first surface that is coupled to a power electrode of the power semiconductor chip, an encapsulation body at least partially encapsulating the power semiconductor chip and the electrical connector, and an electrical insulation layer arranged at a second surface of the electrical connector opposite the first surface, wherein parts of the encapsulation body and the electrical insulation layer form a coplanar surface of the power semiconductor package.

A semiconductor device has a leadframe and a first electrical component including a first surface disposed on the leadframe. A first clip bond is disposed over a second surface of the first electrical component. The first clip bond extends vertically through the semiconductor device. The first clip bond has a vertical member, horizontal member connected to the vertical member, die contact integrated with the horizontal member, and clip foot extending from the vertical member. A second electrical component has a first surface disposed on the first clip bond. A second clip bond is disposed over a second surface of the second electrical component opposite the first surface of the second electrical component. An encapsulant is deposited around the first electrical component and first clip bond. A second electrical component is disposed over the encapsulant. The clip foot is exposed from the encapsulant.

A method for manufacturing a semiconductor device includes: fixing a semiconductor chip to a first part of a leadframe; bonding one connector member to a first terminal of the semiconductor chip, a second terminal of the semiconductor chip, a second part of the leadframe, and a third part of the leadframe; forming a sealing member; and separating a first conductive part of the connector member and a second conductive part of the connector member by removing at least a section of the portion of the connector member exposed outside the sealing member, the first conductive part being bonded to the first terminal and the second part, the second conductive part being bonded to the second terminal and the third part.

A furcated clip includes a removable collar, and an arrangement of stems attached to the removable collar. The stems are configured for contacting bond pads of a semiconductor die and connecting the bond pads to leadframe posts of a leadframe structure.