A semiconductor module according to the present disclosure includes: an insulating substrate; a first conductor disposed on the insulating substrate; a second conductor disposed on the insulating substrate; a first semiconductor element disposed on the first conductor; a second semiconductor element disposed on the second conductor; a first busbar connected to the first conductor in a region between the first semiconductor element and the second semiconductor element; a second busbar connected to the second semiconductor element; and an output busbar connecting the first semiconductor element to the second conductor and connected to the second conductor in the region between the first semiconductor element and the second semiconductor element. The output busbar is disposed at least partially overlapping the first busbar, and in an overlap region between the output busbar and the first busbar, the output busbar is located above the first busbar.

An integrated circuit (IC) package includes a lead frame and a first die attached to the lead frame. The IC package also includes a first clip attached to first die and the lead frame. The IC package further includes a second die attached to first clip and the lead frame. The IC package still further includes a second clip with a clip foot adhered to the lead frame on a first side of the second clip, the second clip extending to and contacting a side of the second die via a layer of solder paste. The second clip includes a sawn or lased edge at a second side of the second clip opposing the first side of the second clip.

In some embodiments, a semiconductor device includes a semiconductor die including a vertical transistor device having a source electrode, a drain electrode and a gate electrode, the semiconductor die having a first surface and a metallization structure located on the first surface. The metallization structure includes a first conductive layer on the first surface, a first insulating layer on the first conductive layer, a second conductive layer on the first insulating layer, a second insulating layer on the second conductive layer and a third conductive layer on the second insulting layer. The third conductive layer includes at least one source pad electrically coupled to the source electrode, at least one drain pad electrically coupled to the drain electrode and at least one gate pad electrically coupled to the gate electrode.

A semiconductor package includes a die pad having a die attach surface, a rear surface opposite the die attach surface, and an outer edge side extending between the die attach surface and the rear surface, the outer edge side having a step-shaped profile, wherein an upper section of the die pad laterally overhangs past a lower section of the die pad, a semiconductor die mounted on the die attach surface and having a first electrical terminal on an upper surface of the semiconductor die, and a first conductive clip that directly electrically contacts the first electrical terminal and wraps around the outer edge side of the die pad such that a section of the first conductive clip is at least partially within an area that is directly below the upper section of the die pad and directly laterally adjacent to the lower section.

A packaged semiconductor device has a die attach pad and leads disposed proximate to the die attach pad. Each lead has a lead bottom surface and a lead end surface. A semiconductor device attached adjacent to a top surface of the die attach pad, and a conductive clip is attached to the semiconductor device and at least one of the leads. The conductive clip comprises a first tie bar extending from a first side surface of the conductive clip. A package body encapsulates the semiconductor device, the conductive clip, portions of the leads, at least a portion of the first tie bar, and at least a portion of the die attach pad. Each lead end surface is exposed in a side surface of the package body, and an end surface of the first tie bar is exposed in a first side surface of the package body. A conductive layer is disposed on each lead end surface but is not disposed on the end surface of the first tie bar.

A chip package structure, comprises a first chip having a plurality of first chip joints at a lower side thereof; a circuit board below the first chip; an upper side of the circuit board being arranged with a plurality of circuit board joints; in packaging, the first chip joints being combined with the circuit board joints of the circuit board so that the first chip is combined to the circuit board by a way of ACF combination or convex joint combination; and wherein in the ACF combination, ACFs are used as welding points to be combined to the pads at another end so that the chip is combined to the circuit board; and wherein in the convex pad combination, a convex pad is combined with a flat pad by chemically methods or physical methods; and these pads are arranged on the circuit board and the first chip.

A semiconductor module includes a substrate, two bare chips (semiconductor elements) mounted on the substrate, and a case fixed to the substrate. A conductor pattern and five signal patterns are provided for each bare chip on an upper surface of an insulating substrate. Signal electrodes and the signal patterns of the bare chips are connected to by conductive plates. An insulating member is provided on connecting portions of the conductive plates.

In a general aspect, an apparatus can include a leadframe. The apparatus can also include a first semiconductor die coupled with a first side of a first portion of the leadframe, and a second semiconductor die coupled with a second side of the first portion of the leadframe. The apparatus can also include a first substrate coupled with a second side of the first semiconductor die. The first substrate can be further coupled with a first side of a second portion of the leadframe and a first side of a third portion of the leadframe. The apparatus can also further include a second substrate coupled with a second side of the second semiconductor die. The second substrate can be further coupled with a second side of the second portion of the leadframe and a second side of the third portion of the leadframe.

A chip package structure, comprises a first chip having a plurality of first chip joints at a lower side thereof; a circuit board below the first chip; an upper side of the circuit board being arranged with a plurality of circuit board joints; in packaging, the first chip joints being combined with the circuit board joints of the circuit board so that the first chip is combined to the circuit board by a way of ACF combination or convex joint combination; and wherein in the ACF combination, ACFs are used as welding points to be combined to the pads at another end so that the chip is combined to the circuit board; and wherein in the convex pad combination, a convex pad is combined with a flat pad by chemically methods or physical methods; and these pads are arranged on the circuit board and the first chip.

A method of manufacturing a semiconductor package includes attaching semiconductor dies to an array of leadframes and positioning a clip array in alignment with the array of leadframes within a mold cavity, the clip array including clips that electrically connect to at least some of the semiconductor dies and a siderail along a perimeter of the clip array. The siderail forms a set of reliefs extending from an outer edge of the siderail to an inner edge of the siderail, the inner edge being adjacent to the array of leadframes. The method also includes injecting a mold compound into the mold cavity through a flow path including the set of reliefs of the siderail to form a mold block at least partially covering the semiconductor dies.